Semiconductor device structures that include sacrificial, readily removable materials

Abstract

A semiconductor device structure includes a sacrificial element and at least one feature adjacent to and at least partially formed by the sacrificial element. The sacrificial element may include a plurality of adjacent, mutually adhered regions. A substrate, such as a semiconductor device or other semiconductor device component, may carry the sacrificial element and the at least one feature. Another feature of the semiconductor device structure (e.g., a conductive trace) may be located adjacent to and at least partially formed by the at least one feature (e.g., a trench for the conductive trace). Semiconductor packages with optical elements and support structures that are formed from photopolymer are also disclosed.

1 . An intermediate semiconductor device structure, comprising: 
 a semiconductor substrate having at least one mask element disposed thereon, the at least one mask element formed from an at least partially cured sacrificial photopolymer; and    a consolidated material laterally adjacent to the at least one mask element with the at least one mask element exposed therethrough.    
   
   
       2 . The intermediate semiconductor device structure of  claim 1 , wherein the semiconductor substrate comprises at least one semiconductor die having at least one redistribution line thereon and the at least one mask element is disposed on a portion of the at least one redistribution line.  
   
   
       3 . The intermediate semiconductor device structure of  claim 1 , wherein the at least partially cured sacrificial photopolymer has a selectivity to be removed by a solvent over the consolidated material.  
   
   
       4 . The intermediate semiconductor device structure of  claim 1 , wherein the consolidated material comprises an at least partially cured photopolymer.  
   
   
       5 . The intermediate semiconductor device structure of  claim 1 , wherein the at least partially cured sacrificial photopolymer comprises a water soluble photopolymer.  
   
   
       6 . A semiconductor device structure, comprising: 
 a sacrificial element comprising a plurality of adjacent, mutually adhered regions of at least partially consolidated material; and    at least one feature adjacent to and at least partially formed by the sacrificial element.    
   
   
       7 . The semiconductor device structure of  claim 6 , wherein the sacrificial element comprises a photopolymer.  
   
   
       8 . The semiconductor device structure of  claim 6 , wherein the sacrificial element comprises a water soluble material.  
   
   
       9 . The semiconductor device structure of  claim 6 , wherein the at least one feature comprises a plurality of adjacent, mutually adhered regions.  
   
   
       10 . The semiconductor device structure of  claim 6 , further comprising: 
 a substrate carrying the sacrificial element and the at least one feature.    
   
   
       11 . The semiconductor device structure of  claim 10 , wherein the substrate comprises at least one semiconductor device component.  
   
   
       12 . The semiconductor device structure of  claim 11 , wherein the at least one semiconductor device component comprises at least one semiconductor device.  
   
   
       13 . The semiconductor device structure of  claim 11 , wherein the at least one semiconductor device component includes a substrate carrying a plurality of semiconductor device components.  
   
   
       14 . The semiconductor device structure of  claim 6 , further comprising: 
 at least another feature adjacent to and at least partially formed by the at least one feature.    
   
   
       15 . The semiconductor device structure of  claim 14 , wherein the at least one feature comprises a trench for a conductive trace.  
   
   
       16 . The semiconductor device structure of  claim 15 , wherein the at least another feature comprises a conductive trace within the trench.  
   
   
       17 . A semiconductor package comprising: 
 at least one semiconductor die having an active surface including at least one array of optically interactive semiconductor devices; and    a support structure that surrounds the at least one array of optically interactive semiconductor devices formed from a consolidated material comprising a cured photopolymer.    
   
   
       18 . The semiconductor package of  claim 17 , further comprising: 
 at least one lens disposed over the at least one array and supported by the support structure.    
   
   
       19 . The semiconductor package of  claim 18 , further comprising: 
 an infrared filter disposed over the at least one array between the active surface and the at least one lens.    
   
   
       20 . The semiconductor package of  claim 17 , further comprising: 
 an optically clear consolidated material comprising a cured photopolymer covering the at least one array of optically interactive semiconductor devices.