Exhaust processing method, plasma processing method and plasma processing apparatus

Abstract

A chemical-reaction inducing means is provided in an exhaust line connecting a processing space for subjecting a substrate or a film to plasma processing to an exhaust means, and at least either an unreacted gas or byproduct exhausted from the processing space are caused to chemically react without allowing plasma in the processing space to reach the chemical-reaction inducing means, thereby improving the processing ability of the chemical-reaction inducing means to process the unreacted gas or byproduct.

1 .- 30 . (canceled)  
   
   
       31 . A plasma processing apparatus comprising a processing space for subjecting a substrate or a film to plasma processing, exhaust means for exhausting the processing space, and an exhaust line connecting the processing space to the exhaust means, 
 wherein chemical-reaction inducing means is provided in the exhaust line, and means for blocking plasma is arranged between the processing space and the chemical-reaction inducing means.    
   
   
       32 . The plasma processing apparatus according to  claim 31 , wherein the chemical-reaction inducing means a heating element.  
   
   
       33 . The plasma processing apparatus according to  claim 31 , wherein the chemical-reaction inducing means a metal member of a high melting point.  
   
   
       34 . The plasma processing apparatus according to  claim 33 , wherein the metal member of a high melting point contains at least one selected from the group consisting of chromium, molybdenum, tungsten, vanadium, niobium, tantalum, titanium, zirconium, and hafnium.  
   
   
       35 . The plasma processing apparatus according to  claim 31 , wherein a conductive member is provided as the means for blocking plasma and has a potential different from that in a plasma space.  
   
   
       36 . The plasma processing apparatus according to  claim 35 , wherein the conductive member is composed of a metal.  
   
   
       37 . The plasma processing apparatus according to  claim 35 , wherein the conductive member comprises the same material as that of the chemical-reaction inducing means.  
   
   
       38 . The plasma processing apparatus according to  claim 35 , wherein the means for blocking plasma an electrically grounded member.  
   
   
       39 . The plasma processing apparatus according to  claim 31 , wherein the means for blocking plasma one or more linear members or spirally-wound linear members.  
   
   
       40 . The plasma processing apparatus according to  claim 31 , wherein the means for blocking plasma a mesh.  
   
   
       41 . The plasma processing apparatus according to  claim 31 , wherein the means for blocking plasma a plate-like member having a shape for preventing passage of the plasma.  
   
   
       42 . The plasma processing apparatus according to  claim 31 , wherein the means for blocking plasma a plate-like member with openings.  
   
   
       43 . The plasma processing apparatus according to  claim 31 , wherein the means for blocking plasma a plate-like member arranged in the exhaust line so that a gap is provided between the plate-like member and an inner wall of the exhaust line.  
   
   
       44 . The plasma processing apparatus according to  claim 31 , wherein the plasma processing is film formation utilizing a plasma CVD process.  
   
   
       45 . The plasma processing apparatus according to  claim 31 , wherein the plasma processing is plasma etching of a substrate or a film.  
   
   
       46 . A plasma processing apparatus comprising a processing space for subjecting a substrate or a film to plasma processing, exhaust means for exhausting the processing space, and an exhaust line connecting the processing space to the exhaust means, 
 wherein a first metal member connected to a power source is provided in the exhaust line, and a second metal member electrically grounded is provided between said processing space and the first metal member.    
   
   
       47 . The plasma processing apparatus according to  claim 46 , wherein the first and second metal members comprise the same raw material.  
   
   
       48 . The plasma processing apparatus according to  claim 46 , wherein the first and second metal members have the same shape.  
   
   
       49 . The plasma processing apparatus according to  claim 46 , wherein the first and second metal members each comprise a filament.  
   
   
       50 . The plasma processing apparatus according to  claim 46 , wherein the first metal member is heated by means of power supplied by the power source.