US2007272349A1PendingUtilityA1

System and Method for Low Temperature Plasma Enhanced Bonding

Assignee: CHEN CHIEN-HUAPriority: Aug 13, 2004Filed: Jul 19, 2007Published: Nov 29, 2007
Est. expiryAug 13, 2024(expired)· nominal 20-yr term from priority
H10W 72/07337H10W 72/354H10W 72/30H10W 72/073
46
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Claims

Abstract

A method for bonding a plurality of substrates includes performing a gas plasma treatment on the plurality of substrates, and performing a water plasma treatment on the plurality of substrates. Additionally, a system for performing low temperature plasma enhanced bonding includes a substrate housing structure having a substrate receiving volume, a gas source fluidly coupled to the substrate housing structure, a water vapor source fluidly coupled to the substrate housing structure, and a radio-frequency (RF) generator coupled to the substrate housing structure, wherein the system is configured to perform both a gas plasma treatment and a water plasma treatment on a substrate.

Claims

exact text as granted — not AI-modified
1 - 22 . (canceled)  
     
     
         23 . A system for performing low temperature plasma enhanced bonding comprising: 
 a substrate housing structure including a substrate receiving volume;    a gas source fluidly coupled to said substrate housing structure;    a water vapor source fluidly coupled to said substrate housing structure; and    a radio-frequency (RF) generator coupled to said substrate housing structure;    wherein said system is configured to perform both a gas plasma treatment and a water plasma treatment on a substrate to hydrate a surface of said substrate while forming a silanol group on a surface of said substrate.    
     
     
         24 . The system of  claim 23 , wherein said gas source is configured to selectively supply a gas to said substrate housing structure; 
 said gas including one of N 2 , O 2 , argon, or air.    
     
     
         25 . The system of  claim 23 , further comprising a vacuum pump fluidly coupled to said substrate housing structure; 
 said vacuum pump being configured to selectively evacuate said substrate housing structure.    
     
     
         26 . The system of  claim 25 , further comprising a matching network disposed between said RF generator and said substrate housing structure; 
 wherein said matching network is configured to match the impedance of a gas or a water plasma disposed within said substrate housing structure.    
     
     
         27 . The system of  claim 26 , further comprising a computing device communicatively coupled to said system; 
 wherein said computing device is configured to control said RF generator, said matching network, said vacuum pump, said gas source, and said water source.    
     
     
         28 . The system of  claim 27 , further comprising a bond tool configured to receive a plurality of substrates.  
     
     
         29 . (canceled)  
     
     
         30 . A system for performing low temperature plasma enhanced bonding comprising: 
 a means for housing a substrate;    a means for providing a gas to said means for housing, said means for providing a gas being fluidly coupled to said means for housing;    a means for selectively providing water vapor to said means for housing fluidly coupled to said means for housing; and    a means for generating radio-frequency (RF) power, said RF power generating means being coupled to said means for housing a substrate;    wherein said system is configured to perform both a gas plasma treatment and a water plasma treatment on a substrate to hydrate a surface of said substrate while forming a silanol group on a surface of said substrate.    
     
     
         31 . The system of  claim 30 , wherein said means for providing a gas is configured to supply one of N 2 , O 2 , argon, or air to said means for housing a substrate.  
     
     
         32 . The system of  claim 30 , further comprising a means for pumping fluidly coupled to said means for housing a substrate; 
 said means for pumping being configured to selectively evacuate said means for housing a substrate.    
     
     
         33 . The system of  claim 32 , further comprising a matching network disposed between said means for generating radio-frequency (RF) power and said a means for housing a substrate; 
 wherein said matching network is configured to match an RF power output from said means for generating radio-frequency (RF) power to an impedance of a gas or a water plasma disposed in said means for housing.    
     
     
         34 . The system of  claim 33 , further comprising a means for computing data communicatively coupled to said system; 
 wherein said means for computing is configured to control said means for generating RF power, said matching network, said means for pumping, said means for providing gas, and said means for providing water.    
     
     
         35 . The system of  claim 34 , further comprising a bond tool configured to receive a plurality of substrates.  
     
     
         36 - 39 . (canceled)

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