Plasma processing apparatus and cleaning method thereof

Abstract

A plasma processing apparatus includes a mounting table for mounting thereon an object to be processed, an electrode connected to a high frequency power supply, an electrical state setting unit for setting an electrical state of the mounting table to a conducting state or a floating state, and a controller for controlling the high frequency power supply to apply a high frequency power to the electrode and controlling the electrical state setting unit to set an electrical state of the mounting table to a floating state. Further, a radical produced from a cleaning gas by the applied high frequency power is made to have a contact with the mounting table.

1 . A plasma processing apparatus, comprising: 
 a mounting table for mounting thereon an object to be processed;    an electrode connected to a high frequency power supply;    an electrical state setting unit for setting an electrical state of the mounting table to a conducting state or a floating state; and    a controller for controlling the high frequency power supply to apply a high frequency power to the electrode and controlling the electrical state setting unit to set an electrical state of the mounting table to a floating state, wherein a radical produced from a cleaning gas by the applied high frequency power is made to have a contact with the mounting table    
   
   
       2 . The plasma processing apparatus of  claim 1 , wherein the plasma processing apparatus includes an accommodation chamber for accommodating therein the mounting table and the electrode; the electrode and the mounting table are respectively disposed in an upper portion and a lower portion of the accommodation chamber; and the mounting table is connected to another high frequency power supply.  
   
   
       3 . The plasma processing apparatus of  claim 1 , wherein the object is a circular plate having a diameter of 300 mm, and a distance between the mounting table and the electrode is approximately 35 mm.  
   
   
       4 . The plasma processing apparatus of  claim 1 , wherein the object is a circular plate having a diameter of 200 mm, and a distance between the mounting table and the electrode is approximately 70 mm.  
   
   
       5 . The plasma processing apparatus of  claim 2 , wherein the object is a circular plate having a diameter of 300 mm, and a distance between the mounting table and the electrode is approximately 35 mm.  
   
   
       6 . The plasma processing apparatus of  claim 2 , wherein the object is a circular plate having a diameter of 200 mm, and a distance between the mounting table and the electrode is approximately 70 mm.  
   
   
       7 - 9 . (canceled)