Semiconductor wafer front side protection

Abstract

There is provided a method for making a wafer comprising the steps of providing a substrate having a first surface, an opposite second surface, and at least one side edge defining a thickness of the substrate, the at least one side edge having a first peripheral region and a second peripheral region adjacent to the first peripheral region. The method includes applying a fluid to the first surface and the first peripheral region of the at least one side edge and removing the opposite second surface and the second peripheral region of the at least one side edge to form a third surface. A semiconductor chip made from the method for making the wafer is also provided.

1 . A method for making a wafer comprising the steps of: 
 providing a substrate having a first surface, an opposite second surface, and at least one side edge defining a thickness of said substrate, said at least one side edge having a first peripheral region and a second peripheral region adjacent to said first peripheral region;    chucking said substrate in a chuck with said first surface in contact with said chuck;    applying a fluid to said first surface and said first peripheral region of said at least one side edge by spraying a liquid stream against said first surface and said first peripheral region of said at least one side edge of said substrate at a pressure of from about 1 psi to about 20 psi; and    removing said opposite second surface and said second peripheral region of said at least one side edge by grinding to form a third surface.    
   
   
       2 . A method for making a wafer comprising the steps of: 
 providing a substrate having a first surface, an opposite second surface, and at least one side edge defining a thickness of said substrate, said at least one side edge having a first peripheral region and a second peripheral region adjacent to said first peripheral region;    chucking said substrate in a chuck with said first surface in contact with said chuck;    applying a fluid to said first surface and said first peripheral region of said at least one side edge by spraying a liquid stream against said first surface and said first peripheral region of said at least one side edge of said substrate for about one minute to about ten minutes; and    removing said opposite second surface and said second peripheral region of said at least one side edge by grinding to form a third surface.    
   
   
       3 . A method for making a wafer comprising the steps of: 
 providing a substrate having a first surface, an opposite second surface, and at least one side edge defining a thickness of said substrate, said at least one side edge having a first peripheral region and a second peripheral region adjacent to said first peripheral region;    chucking said substrate in a chuck with said first surface in contact with said chuck;    applying a fluid to said first surface and said first peripheral region of said at least one side edge by spraying a liquid stream against said first surface and said first peripheral region of said at least one side edge of said substrate at a temperature of from about 20° C. to about 40° C.; and    removing said opposite second surface and said second peripheral region of said at least one side edge by grinding to form a third surface.    
   
   
       4 . A method for making a wafer comprising the steps of: 
 providing a substrate having a first surface, an opposite second surface, and at least one side edge defining a thickness of said substrate, said at least one side edge having a first peripheral region and a second peripheral region adjacent to said first peripheral region;    chucking said substrate in a chuck with said first surface in contact with said chuck;    applying a fluid to said first surface and said first peripheral region of said at least one side edge by spraying a liquid stream against said first surface and said first peripheral region of said at least one side edge of said substrate at a pressure of from about 1 psi to about 20 psi, for about one minute to about 10 minutes, and at a temperature of from about 20° C. to about 40° C.; and    removing said opposite second surface and said second peripheral region of said at least one side edge by grinding to form a third surface.    
   
   
       5 . A method for making a wafer comprising the steps of: 
 providing a substrate having a first surface, an opposite second surface, and at least one side edge defining a thickness of said substrate, said at least one side edge having a first peripheral region and a second peripheral region adjacent to said first peripheral region;    chucking said substrate in a chuck with said first surface in contact with said chuck;    applying a fluid to said first surface and said first peripheral region of said at least one side edge by blowing a gas stream against said first surface and said first peripheral region of said at least one side edge of said substrate at a pressure from about 1 psi to about 60 psi, for about one minute to about 10 minutes, at a temperature of from about 20° C. to about 40° C.; and    removing said opposite second surface and said second peripheral region of said at least one side edge by grinding to form a third surface.    
   
   
       6 . The method for making the wafer of  claim 4  wherein said step of removing said opposite second surface and said second peripheral region of said at least one side edge of said substrate comprises grinding said wafer while applying a fluid to said first surface and said first peripheral region of said at least one side edge by blowing a liquid stream against said first surface and said first peripheral region of said at least one side edge, and where said grinding is performed using a grinding wheel including diamonds having a size of from about 4 microns to about 60 microns in diameter.  
   
   
       7 . The method for making the wafer of  claim 4  further including polishing of said wafer.  
   
   
       8 . The method of  claim 5  wherein the first surface of said wafer is free of any tape.