Semiconductor wafer and method of manufacturing the same and method of manufacturing semiconductor device

Abstract

A semiconductor wafer comprising: a tubular trench formed at a position to form a through-hole electrode of a wafer; an insulating member buried inside the trench and on an upper surface of the trench; a gate electrode film and a metal film formed on an upper surface of the insulating member; a multilevel columnar wiring via formed on an upper surface of the metal film; and an external connection electrode formed electrically connected to the metal film via the multilevel columnar wiring via. In this manner, it is unnecessary to have a new process of dry etching to form a through-hole electrode after thinning the wafer and equipment development. Moreover, introduction of a specific design enables formation of through-hole electrodes with significantly reduced difficulties of respective processes.

1 . A semiconductor wafer comprising:
 a hollow tubular trench formed at a position to form a through-hole electrode of a silicon wafer;   an insulating member buried inside the trench and on an upper surface of the silicon wafer surrounded by the trench;   a conducting film formed on an upper surface of the insulating member;   a conducting member formed on the conducting film; and   an external connection electrode formed electrically connected to the conducting film via the conducting member.   
   
   
       2 . The semiconductor wafer according to  claim 1 , wherein the conducting film is formed of a plurality of conducting films formed in a semiconductor manufacturing process; and
 the conducting member is comprised of a multilevel columnar wiring via formed in a process of forming multilayer wirings and an interlayer insulating film in the semiconductor manufacturing process.   
   
   
       3 . A method of manufacturing a semiconductor wafer comprising the steps of:
 forming a hollow tubular trench at a position to form a through-hole electrode of a silicon wafer;   burying an insulating member inside the trench and on an upper surface of the silicon wafer surrounded by the trench;   forming a conducting film on an upper surface of the insulating member;   forming a conducting member on an upper surface of the conducting film; and   forming an external connection electrode electrically connected to the conducting film via the conducting member.   
   
   
       4 . The method of manufacturing a semiconductor wafer according to  claim 3 ,
 wherein the step of forming the conducting film forms a plurality of conducting films in a semiconductor manufacturing process; and   the step of manufacturing the conducting member forms a multilevel columnar wiring via in a process of forming multilayer wirings and an interlayer insulating film in the semiconductor manufacturing process.   
   
   
       5 . A method of manufacturing a semiconductor device using the semiconductor wafer according to  claim 1  comprising the steps of:
 thinning the semiconductor wafer from its back surface and exposing the insulating member buried inside the trench;   dissolving the insulating member inside and on an upper surface of the trench by wet etching; and   forming a silicon hole part reaching the conducting film by dropping a silicon piece of an inner surface of the trench.   
   
   
       6 . The method of manufacturing a semiconductor device according to  claim 5  further comprising the steps of:
 forming an insulating film in an inner surface of the silicon hole part and on a whole surface of the back surface of the semiconductor wafer;   exposing the conducting film by removing the insulating film on a bottom part of the silicon hole part; and   forming a seed layer for electrolytic plating and an electrolytic plating film on the inner surface of the silicon hole part and a predetermined area of the back surface of the semiconductor wafer so as to form a through-hole electrode electrically connected to the external connection electrode.   
   
   
       7 . The method of manufacturing a semiconductor device according to  claim 5 ,
 wherein the steps from exposing the insulating member to forming the silicon hole part are performed with the semiconductor wafer adhered to a holding member, and the semiconductor wafer is separated from the holding member after finishing manufacturing.   
   
   
       8 . A method of manufacturing a semiconductor wafer comprising the steps of:
 forming a hollow tubular trench at a position to form a through-hole electrode of a silicon wafer;   burying an insulating member inside the trench and on an upper surface of the silicon wafer surrounded by the trench;   forming a conducting film on an upper surface of the insulating member;   forming a conducting member on an upper surface of the conducting film;   forming an external connection electrode electrically connected to the conducting film via the conducting member;   thinning the silicon wafer from its back surface and exposing the insulating member buried inside the trench;   dissolving the insulating member inside and on an upper surface of the trench by wet etching;   forming a silicon hole part reaching the conducting film by dropping a silicon piece of an inner surface of the trench;   forming an insulating film in an inner surface of the silicon hole part and on a surface of the back surface of the silicon wafer;   exposing the conducting film by removing the insulating film only on a bottom part of the silicon hole part; and   forming a seed layer for electrolytic plating and an electrolytic plating film on the inner surface of the silicon hole part and a predetermined area of the back surface of the silicon wafer so as to form a through-hole electrode electrically connected to the external connection electrode.   
   
   
       9 . A semiconductor wafer comprising:
 a hollow tubular trench formed at a position to form a through-hole electrode of a silicon wafer;   an insulating member buried inside the trench and on an upper surface of the silicon wafer surrounded by the trench;   a conducting film formed on an upper surface of the insulating member;   a conducting member formed on the conducting film; and   an I/O wiring, a power wiring, or a ground wiring in an LSI formed electrically connected to the conducting film via the conducting member.   
   
   
       10 . The semiconductor wafer according to  claim 9 , wherein the conducting film is formed of a plurality of conducting films formed in a semiconductor manufacturing process; and
 the conducting member is comprised of a multilevel columnar wiring via formed in a process of forming multilayer wirings and an interlayer insulating film in the semiconductor manufacturing process.   
   
   
       11 . A method of manufacturing a semiconductor wafer comprising the steps of:
 forming a hollow tubular trench at a position to form a through-hole electrode of a silicon wafer;   burying an insulating member inside the trench and on an upper surface of the silicon wafer surrounded by the trench;   forming a conducting film on an upper surface of the insulating member;   forming a conducting member on an upper surface of the conducting film; and   forming an I/O wiring, a power wiring, or a ground wiring in an LSI electrically connected to the conducting film via the conducting member.   
   
   
       12 . The method of manufacturing a semiconductor wafer according to  claim 11 ,
 wherein the step of forming the conducting film forms a plurality of conducting films in a semiconductor manufacturing process; and   the step of manufacturing the conducting member forms a multilevel columnar wiring via in a process of forming multilayer wirings and an interlayer insulating film in the semiconductor manufacturing process.   
   
   
       13 . A method of manufacturing a semiconductor device using the semiconductor wafer according to  claim 9  comprising the steps of:
 thinning the semiconductor wafer from its back surface and exposing the insulating member buried inside the trench;   dissolving the insulating member inside and on an upper surface of the trench by wet etching; and   forming a silicon hole part reaching the conducting film by dropping a silicon piece of an inner surface of the trench.   
   
   
       14 . The method of manufacturing a semiconductor device according to  claim 13  further comprising the steps of:
 forming an insulating film in an inner surface of the silicon hole part and on a whole surface of the back surface of the semiconductor wafer;   exposing the conducting film by removing the insulating film only on a bottom part of the silicon hole part; and   forming a seed layer for electrolytic plating and an electrolytic plating film on the inner surface of the silicon hole part and a predetermined area of the back surface of the semiconductor wafer so as to form a through-hole electrode electrically connected to the external connection electrode.   
   
   
       15 . The method of manufacturing a semiconductor device according to  claim 13 ,
 wherein the steps from exposing the insulating member to forming the silicon hole part are performed with the semiconductor wafer adhered to a holding member, and the semiconductor wafer is separated from the holding member after finishing manufacturing.   
   
   
       16 . A method of manufacturing a semiconductor wafer comprising the steps of:
 forming a hollow tubular trench at a position to form a through-hole electrode of a silicon wafer;   burying an insulating member inside the trench and on an upper surface of the silicon wafer surrounded by the trench;   forming a conducting film on an upper surface of the insulating member;   forming a conducting member on an upper surface of the conducting film;   forming an I/O wiring, a power wiring, or a ground wiring in an LSI electrically connected to the conducting film via the conducting member;   thinning the silicon wafer from its back surface and exposing the insulating member buried inside the trench;   dissolving the insulating member inside and on an upper surface of the trench by wet etching;   forming a silicon hole part reaching the conducting film by dropping a silicon piece of an inner surface of the trench;   forming an insulating film in an inner surface of the silicon hole part and on a whole surface of the back surface of the silicon wafer;   exposing the conducting film by removing the insulating film only on a bottom part of the silicon hole part; and   forming a seed layer for electrolytic plating and an electrolytic plating film on the inner surface of the silicon hole part and a predetermined area of the back surface of the silicon wafer so as to form a through-hole electrode electrically connected to the external connection electrode.   
   
   
       17 . The semiconductor wafer according to  claim 1 ,
 wherein the trench has a cross-sectional shape of such as circular shape and polygonal shape.   
   
   
       18 . The semiconductor wafer according to  claim 1  further comprising a gold bump formed on the external connection electrode at the wafer level. 
   
   
       19 . The semiconductor wafer according to  claim 1  further comprising:
 a trench formed in a scribe area of the silicon wafer; and   an insulating member buried inside and on an upper surface of the trench.   
   
   
       20 . The method of manufacturing a semiconductor device according to  claim 6  comprising the steps of:
 dicing the semiconductor wafer having the through-hole electrode formed therein into a size of each chip; and   forming a gold bump on the external connection electrode of each of the diced chips,   wherein, to stack a second chip having the gold bump on a first chip having the through-hole electrode, the gold bump of the second chip is pressed into the inside of through-hole electrode of the first chip and mechanically caulked so as to electrically connect between the stacked chips.