Multi-stage curing of low k nano-porous films

Abstract

Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.

1 - 10 . (canceled)  
   
   
       11 . A nanoporous low K dielectric film comprising: 
 a cross-linked framework resulting from multi-stage curing of a silicon-containing component of a chemical vapor deposited film; and    a plurality of nanopores resulting from porogen outgassing resulting from multistage curing of a non-silicon containing component of the chemical vapor deposited film.    
   
   
       12 . The film of  claim 11  wherein the nanopores result from a multi-stage curing process involving the application of thermal energy prior to electron beam radiation.  
   
   
       13 . The film of  claim 11  wherein the nanopores result from a multi-stage curing process involving the application of thermal energy subsequent to electron beam radiation.  
   
   
       14 . The film of  claim 11  wherein the silicon containing component comprises diethoxymethylsilane, and the non-silicon containing component comprises alpha-terpinene.  
   
   
       15 . An interconnect metallization structure comprising: 
 a first metallization layer;    a liner/barrier layer overlying the first metallization layer;    an ultra low K nanoporous dielectric layer overlying the first metallization layer, the ultra low K nanoporous dielectric layer comprising,    a cross-linked framework resulting from multi-stage curing of a silicon-containing component of a chemical vapor deposited film, and    a plurality of nanopores resulting from porogen outgassing resulting from multistage curing of a non-silicon containing component of the chemical vapor deposited film; and    a second metallization layer overlying the ultra low K nanoporous dielectric layer.    
   
   
       16 . The structure of  claim 15  wherein the nanopores result from a multi-stage curing process involving the application of thermal energy prior to electron beam radiation.  
   
   
       17 . The structure of  claim 15  wherein the nanopores result from a multi-stage curing process involving the application of thermal energy subsequent to electron beam radiation.  
   
   
       18 . The structure of  claim 15  wherein the silicon containing component comprises diethoxymethyl silane, and the non-silicon containing component comprises alpha-terpinene.  
   
   
       19 . The structure of  claim 15  wherein at least one of the first and second metallization layers comprise copper.