Inventor · disambiguated record
Kang Sub Yim
Also filed as: YIM KANG S · YIM KANG SUB
44 granted patents·15 pending applications·1,156 citations·filing 2002–2022
98Inventor score
Top patents by PatentIndex Score
59 records- 0199US7253123B2Method for producing gate stack sidewall spacersAPPLIED MATERIALS INC·Filed 2005·Granted Aug 7, 2007·253 cites·24 claims
- 0297US8492170B2UV assisted silylation for recovery and pore sealing of damaged low K filmsXIE BO·Filed 2011·Granted Jul 23, 2013·522 cites·20 claims
- 0396US7879683B2Methods and apparatus of creating airgap in dielectric layers for the reduction of RC delayAPPLIED MATERIALS INC·Filed 2007·Granted Feb 1, 2011·35 cites·17 claims
- 0496US7422776B2Low temperature process to produce low-K dielectrics with low stress by plasma-enhanced chemical vapor deposition (PECVD)APPLIED MATERIALS INC·Filed 2005·Granted Sep 9, 2008·33 cites·7 claims
- 0594US7297376B1Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layersAPPLIED MATERIALS INC·Filed 2006·Granted Nov 20, 2007·33 cites·26 claims
- 0693US7745328B2Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)APPLIED MATERIALS INC·Filed 2008·Granted Jun 29, 2010·12 cites·5 claims
- 0793US7056560B2Ultra low dielectric materials based on hybrid system of linear silicon precursor and organic porogen by plasma-enhanced chemical vapor deposition (PECVD)APPLIED MATERIALS INC·Filed 2004·Granted Jun 6, 2006·59 cites·10 claims
- 0892US7422774B2Method for forming ultra low k films using electron beamAPPLIED MATERIALS INC·Filed 2005·Granted Sep 9, 2008·13 cites·15 claims
- 0991US8993444B2Method to reduce dielectric constant of a porous low-k filmAPPLIED MATERIALS INC·Filed 2013·Granted Mar 31, 2015·5 cites·20 claims
- 1091US7465659B2Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)APPLIED MATERIALS INC·Filed 2006·Granted Dec 16, 2008·8 cites·12 claims
- 1189US11621162B2Systems and methods for forming UV-cured low-κ dielectric filmsAPPLIED MATERIALS INC·Filed 2020·Granted Apr 4, 2023·2 cites·20 claims
- 1289US11600486B2Systems and methods for depositing low-κdielectric filmsAPPLIED MATERIALS INC·Filed 2020·Granted Mar 7, 2023·2 cites·20 claims
- 1389US7060330B2Method for forming ultra low k films using electron beamAPPLIED MATERIALS INC·Filed 2002·Granted Jun 13, 2006·35 cites·25 claims
- 1488US8216861B1Dielectric recovery of plasma damaged low-k films by UV-assisted photochemical depositionYIM KANG SUB·Filed 2011·Granted Jul 10, 2012·14 cites·10 claims
- 1588US6838393B2Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbideAPPLIED MATERIALS INC·Filed 2002·Granted Jan 4, 2005·24 cites·27 claims
- 1686US9105695B2Cobalt selectivity improvement in selective cobalt process sequenceAPPLIED MATERIALS INC·Filed 2014·Granted Aug 11, 2015·6 cites·20 claims
- 1785US7615482B2Structure and method for porous SiCOH dielectric layers and adhesion promoting or etch stop layers having increased interfacial and mechanical strengthIBM·Filed 2007·Granted Nov 10, 2009·6 cites·21 claims
- 1885US7008484B2Method and apparatus for deposition of low dielectric constant materialsAPPLIED MATERIALS INC·Filed 2002·Granted Mar 7, 2006·19 cites·15 claims
- 1984US8481422B2Prevention and reduction of solvent and solution penetration into porous dielectrics using a thin barrier layerCHAN KELVIN·Filed 2012·Granted Jul 9, 2013·6 cites·16 claims
- 2084US7989033B2Silicon precursors to make ultra low-K films with high mechanical properties by plasma enhanced chemical vapor depositionAPPLIED MATERIALS INC·Filed 2008·Granted Aug 2, 2011·5 cites·6 claims
- 2182US7998536B2Silicon precursors to make ultra low-K films of K<2.2 with high mechanical properties by plasma enhanced chemical vapor depositionAPPLIED MATERIALS INC·Filed 2007·Granted Aug 16, 2011·4 cites·13 claims
- 2282US7611996B2Multi-stage curing of low K nano-porous filmsAPPLIED MATERIALS INC·Filed 2005·Granted Nov 3, 2009·10 cites·7 claims
- 2381US11967498B2Systems and methods for depositing low-k dielectric filmsAPPLIED MATERIALS INC·Filed 2020·Granted Apr 23, 2024·1 cites·13 claims
- 2479US11594409B2Systems and methods for depositing low-k dielectric filmsAPPLIED MATERIALS INC·Filed 2020·Granted Feb 28, 2023·1 cites·12 claims
- 2579US9659765B2Enhancement of modulus and hardness for UV-cured ultra low-k dielectric filmsAPPLIED MATERIALS INC·Filed 2015·Granted May 23, 2017·3 cites·15 claims
- 2678US9478460B2Cobalt selectivity improvement in selective cobalt process sequenceAPPLIED MATERIALS INC·Filed 2015·Granted Oct 25, 2016·2 cites·20 claims
- 2776US9850574B2Forming a low-k dielectric layer with reduced dielectric constant and strengthened mechanical propertiesAPPLIED MATERIALS INC·Filed 2015·Granted Dec 26, 2017·2 cites·18 claims
- 2875US6984579B2Ultra low k plasma CVD nanotube/spin-on dielectrics with improved properties for advanced nanoelectronic device fabricationAPPLIED MATERIALS INC·Filed 2003·Granted Jan 10, 2006·21 cites·34 claims
- 2974US9391024B2Multi-layer dielectric stack for plasma damage protectionAPPLIED MATERIALS INC·Filed 2015·Granted Jul 12, 2016·2 cites·20 claims
- 3074US8236684B2Prevention and reduction of solvent and solution penetration into porous dielectrics using a thin barrier layerCHAN KELVIN·Filed 2008·Granted Aug 7, 2012·4 cites·10 claims
- 3171US7157384B2Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)APPLIED MATERIALS INC·Filed 2004·Granted Jan 2, 2007·7 cites·20 claims
- 3267US12198925B2Systems and methods for depositing low-k dielectric filmsAPPLIED MATERIALS INC·Filed 2022·Granted Jan 14, 2025·0 cites·20 claims
- 3366US7399364B2Hermetic cap layers formed on low-κ films by plasma enhanced chemical vapor depositionAPPLIED MATERIALS INC·Filed 2006·Granted Jul 15, 2008·2 cites·7 claims
- 3461US9324571B2Post treatment for dielectric constant reduction with pore generation on low K dielectric filmsAPPLIED MATERIALS INC·Filed 2014·Granted Apr 26, 2016·1 cites·20 claims
- 3560US12119223B2Single precursor low-k film deposition and UV cure for advanced technology nodeAPPLIED MATERIALS INC·Filed 2021·Granted Oct 15, 2024·0 cites·20 claims
- 3659US10553427B2Low dielectric constant oxide and low resistance OP stack for 3D NAND applicationAPPLIED MATERIALS INC·Filed 2018·Granted Feb 4, 2020·0 cites·7 claims
- 3758US2020126784A1Low dielectric constant oxide and low resistance op stack for 3d nand applicationAPPLIED MATERIALS INC·Filed 2019·Application pending·0 cites
- 3856US11289369B2Low-k dielectric with self-forming barrier layerAPPLIED MATERIALS INC·Filed 2020·Granted Mar 29, 2022·0 cites·19 claims
- 3956US7285503B2Hermetic cap layers formed on low-k films by plasma enhanced chemical vapor depositionAPPLIED MATERIALS INC·Filed 2004·Granted Oct 23, 2007·4 cites·26 claims
- 4056US2020075321A1Non-uv high hardness low k film depositionAPPLIED MATERIALS INC·Filed 2019·Application pending·0 cites
- 4155US2010009161A1STRUCTURE AND METHOD FOR SiCOH INTERFACES WITH INCREASED MECHANICAL STRENGTHIBM·Filed 2009·Application pending·0 cites
- 4253US11572622B2Systems and methods for cleaning low-k deposition chambersAPPLIED MATERIALS INC·Filed 2020·Granted Feb 7, 2023·0 cites·20 claims
- 4353US11393678B2Low-k dielectric filmsAPPLIED MATERIALS INC·Filed 2020·Granted Jul 19, 2022·0 cites·18 claims
- 4453US2006144334A1Method and apparatus for deposition of low dielectric constant materialsAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 4552US2008099920A1Multi-stage curing of low k nano-porous filmsAPPLIED MATERIALS INC·Filed 2007·Application pending·0 cites
- 4651US2007207275A1Enhancement of remote plasma source clean for dielectric filmsAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 4749US9165998B2Adhesion layer to minimize dielectric constant increase with good adhesion strength in a PECVD processAPPLIED MATERIALS INC·Filed 2014·Granted Oct 20, 2015·0 cites·18 claims
- 4847US9312167B1Air-gap structure formation with ultra low-k dielectric layer on PECVD low-k chamberAPPLIED MATERIALS INC·Filed 2014·Granted Apr 12, 2016·0 cites·16 claims
- 4947US2011104891A1Methods and apparatus of creating airgap in dielectric layers for the reduction of rc delayAL-BAYATI AMIR·Filed 2011·Application pending·0 cites
- 5047US2010015816A1Methods to promote adhesion between barrier layer and porous low-k film deposited from multiple liquid precursorsCHAN KELVIN·Filed 2008·Application pending·0 cites
Showing the top 50 of 59 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →