Method and apparatus for forming oxynitride film and nitride film, oxynitride film, nitride film, and substrate

Abstract

Uniform oxynitride and nitride films can be formed by low-temperature and high-speed nitriding reaction not dependent on the nitriding time or nitriding temperature. A solid dielectric is provided on at least one of opposed surfaces of a pair of electrodes opposed to each other under a pressure of 300 (Torr) or higher, a nitrogen gas containing an oxide equal to or lower than 0.2% is introduced into a space between the pair of opposed electrodes, an electric field is applied to the nitrogen gas, and the resulting N 2 (2 nd p.s.) or N 2 (H.I.R) active species is brought into contact with an object to be processed to form an oxynitride film/nitride film on a surface of the object to be processed.

1 - 26 . (canceled)  
   
   
       27 . A method for forming a nitride film, characterized by comprising providing a solid dielectric on at least one of opposed surfaces of a pair of electrodes opposed to each other under nearly atmospheric pressure, introducing a nitrogen gas containing oxygen or an oxide at equal to or lower than 1 ppm into a space between the pair of opposed electrodes, applying an electric field to the nitrogen gas, and bringing the resulting plasma, in which an N 2  (H.I.R.) and/or N 2  (2 nd  p.s.) active species appears dominantly, into contact with an object to be processed to form a nitride film on a surface of the object to be processed.  
   
   
       28 . The method for forming a nitride film according to  claim 27 , characterized in that the nearly atmospheric pressure is equal to or higher than 300 Torr.  
   
   
       29 . The method for forming a nitride film according to  claim 28 , characterized in that the nearly atmospheric pressure is more preferably 500 to 800 Torr.  
   
   
       30 . The method for forming a nitride film according to  claim 27 , characterized in that only neutral active species is present in the plasma as active nitrogen species observed by optical emission spectroscopy.  
   
   
       31 . The method for forming a nitride film according to  claim 27 , characterized in that the plasma is brought into contact with the object to be processed in a diffusion region outside the discharge space between the opposed electrodes.  
   
   
       32 . The method for forming a nitride film according to  claim 27 , characterized in that the solid dielectric is a dielectric containing substantially no oxide.  
   
   
       33 . The method for forming a nitride film according to  claim 27 , characterized in that the object to be processed has a surface temperature of 50° C. or higher, more preferably 100° C. or higher.  
   
   
       34 . The method for forming a nitride film or an oxynitride film according to  claim 27 , characterized in that the nitrogen gas is a high-purity nitrogen gas containing oxygen or an oxide at preferably 1 ppb or less.  
   
   
       35 . A nitride film formed on a surface of an object to be processed by applying an electric field to a nitrogen gas containing oxygen or an oxide at equal to or lower than 1 ppm, more preferably equal to or lower than 1 ppb, and bringing the object to be processed into contact with the resulting plasma in which an N 2  (H.I.R) and/or N 2  (2 nd  p.s.) active species appears dominantly.  
   
   
       36 . A substrate having on its surface a nitride film formed by applying an electric field to a high-purity nitrogen gas containing oxygen or an oxide equal to or lower than 1 ppm, more preferably equal to or lower than 1 ppb, and bringing an object to be processed into contact with the resulting plasma in which an N 2  (H.I.R.) and/or N 2  (2 nd  p.s.) active species appears dominantly.