Active particle trapping for process control
Abstract
A particle isolation system includes a semiconductor process chamber; at least one member within the semiconductor process chamber wherein the member has at least a first position and a second position; and at least one isolation compartment having a plurality of walls, the isolation compartment defined by the plurality of walls, at least one of the plurality of walls of the isolation compartment defining at least one opening wherein the member in the first position permits particles to enter the isolation compartment from the semiconductor process chamber through the opening, and wherein the member in the second position substantially encloses the isolation compartment thereby substantially retaining the particles in the isolation compartment and substantially limiting movement of the particles between the semiconductor process chamber and the isolation compartment through the opening. An ion implant system is also provided.
Claims
exact text as granted — not AI-modified1 . A particle isolation system comprising:
a semiconductor process chamber; at least one member within said semiconductor process chamber wherein said member has at least a first position and a second position; and at least one isolation compartment having a plurality of walls, said isolation compartment defined by said plurality of walls, at least one of said plurality of walls of said isolation compartment defining at least one opening, wherein said member in said first position permits particles to enter said isolation compartment from said semiconductor process chamber through said opening, and wherein said member in said second position substantially encloses said isolation compartment thereby substantially retaining said particles in said isolation compartment and substantially limiting movement of said particles between said semiconductor process chamber and said isolation compartment through said opening.
2 . The particle isolation system of claim 1 , wherein said semiconductor process chamber is selected from the group consisting of an ion beam generator chamber, a beam line chamber, a mass analyzer, an angle corrector magnet, an end station, and a load lock chamber.
3 . The particle isolation system of claim 1 , wherein said member in said second position forms a seal within said opening to prevent movement of said particles through said opening.
4 . The particle isolation system of claim 1 , wherein said member is disposed on a hinge element capable of moving said member from said first position to said second position.
5 . The particle isolation system of claim 4 , wherein said first position is substantially 1° to 360° from substantially parallel with said opening of said isolation compartment and said second position is substantially parallel with said opening of said isolation compartment and substantially blocks said opening thereby substantially retaining said particles in said isolation compartment.
6 . The particle isolation system of claim 1 , wherein said member is configured to be received by said opening of said isolation compartment, said member being pivotally mounted on said isolation compartment and configured to spin from said first position to said second position.
7 . The particle isolation system of claim 6 , wherein said first position is substantially 1° to 180° from substantially parallel with said opening of said isolation compartment and said second position is substantially parallel with said opening of said isolation compartment and substantially blocking said opening thereby substantially retaining said particles in said isolation compartment
8 . The particle isolation system of claim 1 , wherein said member is configured to block said opening of said isolation compartment and can be translated between said first position and said second position.
9 . The particle isolation system of claim 8 , wherein said first position is substantially parallel with said opening and places said member in a position configured to substantially allow said particles to enter said isolation compartment, and said second position places said member in a position to substantially block said opening of said isolation compartment thereby substantially isolating said particles in said isolation compartment.
10 . The particle isolation system of claim 1 , further comprising an actuator configured to move said member between said first position and said second position.
11 . The particle isolation system of claim 10 , further comprising a controller to control said actuator in response to whether said semiconductor process chamber is being vented.
12 . The particle isolation system of claim 10 , further comprising a controller to control said actuator in response to whether preventative maintenance is occurring in said semiconductor process chamber.
13 . The particle isolation system of claim 1 , further comprising a particle monitor to sense a quantity of said particles.
14 . The particle isolation system of claim 13 , further comprising an actuator configured to move said member between said first position and said second position in response to said quantity of particles sensed by said particle monitor.
15 . The particle isolation system of claim 1 , wherein said isolation compartment includes at least one electrostatic sheet, said electrostatic sheet having a charge to attract and substantially retain said particles with opposite charge in said isolation compartment.
16 . The particle isolation system of claim 1 , wherein said isolation compartment includes at least one polymer sheet to substantially retain said particles in said isolation compartment.
17 . The particle isolation system of claim 1 , wherein said particles are removed from said isolation compartment during preventative maintenance of said semiconductor process chamber.
18 . The particle isolation system of claim 1 , wherein said isolation compartment further comprises:
a fluid source to provide a fluid, a vent configured to control an amount of said fluid permitted to enter said isolation compartment; and a pump configured to remove said fluid and said particles from said isolation compartment.
19 . An ion implant system comprising:
an ion source that directs ions toward a workpiece; a semiconductor process chamber; at least one member within said semiconductor process chamber wherein said member has at least a first position and a second position; and at least one isolation compartment having a plurality of walls, said isolation compartment defined by said plurality of walls, at least one of said plurality of walls of said isolation compartment defining at least one opening, wherein said member in said first position permits particles to enter said isolation compartment from said semiconductor process chamber through said opening, and wherein said member in said second position substantially encloses said isolation compartment thereby substantially retaining said particles in said isolation compartment and substantially limiting movement of said particles between said semiconductor process chamber and said isolation compartment through said opening.
20 . The ion implant system of claim 19 , wherein said semiconductor process chamber is under vacuum when said ions are directed toward said workpiece.
21 . The ion implant system of claim 19 , wherein said ion source comprises a beam-line ion implanter.
22 . The ion implant system of claim 19 , wherein said ion source comprises a plasma doping ion implanter.Cited by (0)
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