Semiconductor device package with multi-chips and method of the same

Abstract

The present invention provides a semiconductor device package with the multi-chips comprising a substrate with at least a die receiving through hole, connecting through holes structure and first contact pads on an upper surface and second contact pads on a lower surface of the substrate. At least a first die having first bonding pads is disposed within the die receiving through hole. A first adhesion material is formed under the die and a second adhesion material is filled in the gap between the die and sidewall of the die receiving though hole of the substrate. Then, a first bonding wire is formed to couple the first bonding pads and the first contact pads. Further, at least a second die having second bonding pads is placed on the first die. A second bonding wire is formed to couple to the second bonding pads and the first contact pads. A dielectric layer is formed on the first and second bonding wire, the first and second die and the substrate.

1 . A structure of semiconductor device package, comprising:
 a substrate with at least a die receiving through hole, connecting through holes structure and first contact pads on an upper surface and second contact pads on a lower surface of said substrate;   at least a first die having first bonding pads disposed within said die receiving through hole;   a first adhesion material formed under said first die;   a second adhesion material filled in the gap between said first die and sidewalls of said die receiving though hole of said substrate;   a first bonding wire formed to couple to said first bonding pads and said first contact pads;   at least a second die having second bonding pads disposed on said first die;   a second bonding wire formed to couple to said second bonding pads and said first contact pads;   a die attached material formed under said second die; and   a dielectric layer formed on said first and second bonding wire, said first and second die and said substrate.   
     
     
         2 . The structure in  claim 1 , further comprising a plurality of conductive bumps coupled to said second contact pads. 
     
     
         3 . The structure in  claim 2 , wherein said plurality of conductive bumps can be electrically connected with said bonding pads through said through holes structure. 
     
     
         4 . The structure in  claim 1 , further comprising a metal or conductive layer formed on side walls of said die receiving through hole of said substrate. 
     
     
         5 . The structure in  claim 1 , wherein said connecting through holes structure is formed to pass through said substrate. 
     
     
         6 . The structure in  claim 1 , wherein said connecting through holes structure is formed lateral side of said substrate. 
     
     
         7 . The structure in  claim 1 , wherein material of said substrate includes epoxy type FR5, FR4 or BT (Bismaleimide triazine). 
     
     
         8 . The structure in  claim 1 , wherein material of said substrate includes metal, alloy, glass, silicon, ceramic or print circuit board (PCB). 
     
     
         9 . The structure in  claim 8 , wherein said alloy includes alloy 42 (42% Ni-58% Fe) or Kovar (29% Ni-17% Co-54% Fe). 
     
     
         10 . The structure in  claim 1 , wherein material of said first adhesion material and second adhesion material include UV curing type and thermal curing type material, epoxy or rubber type material. 
     
     
         11 . The structure in  claim 1 , wherein material of said die attached material includes elastic material. 
     
     
         12 . The structure in  claim 1 , wherein said connecting through holes structure is filled by a conductive material. 
     
     
         13 . The structure in  claim 1 , wherein material of said dielectric layer include liquid compound, resin and silicone rubber. 
     
     
         14 . The structure in  claim 1 , wherein material of said dielectric layer include benzocyclobutene (BCB), Siloxane polymer (SINR) or polyimide (PI). 
     
     
         15 . The structure in  claim 1 , wherein material of said first adhesion material include a metal sputtering and/or electro-plating on back side of said first die. 
     
     
         16 . A method for forming a semiconductor device package, comprising:
 providing a substrate with at least a die receiving through hole, connecting through holes structure and first contact pads on an upper surface and second contact pads on a lower surface of said substrate;   redistributing desired at least first die having first bonding pads on a die redistribution tool with desired pitch by a pick and place fine alignment system;   bonding said substrate to said die redistribution tool;   filling a first adhesion material on the back side of said dice;   filling a second adhesion material into the space between said dice edge and said dice receiving through hole of said substrate;   separating said package structure from said die redistribution tool;   forming a first bonding wire to connect said first bonding pads to said first contact pads;   placing at least a second die having second bonding pads on said first die;   forming a second bonding wire to connect said second bonding pads and said first contact pads;   printing a dielectric layer on the active surface of said first and second die and upper surface of said substrate; and   mounting said package structure on a tape to saw into individual die for singulation.   
     
     
         17 . The method in  claim 16 , further comprising a step of welding a plurality of soldering bumps on said terminal pads. 
     
     
         18 . The method in  claim 17 , wherein said step of forming said soldering bumps is performed by an infrared (IR) reflow method. 
     
     
         19 . The method in  claim 17 , wherein said step of forming said conductive bumps on said second contact pads is performed by solder paste. 
     
     
         20 . The method in  claim 16 , further comprising a step of sticking active surface of said first die on said die redistribution tool printed by patterned glues. 
     
     
         21 . The method in  claim 16 , further comprising a step of curing said first and second adhesion material. 
     
     
         22 . The method in  claim 16 , further comprising a die attached tape formed under said second die. 
     
     
         23 . The method in  claim 22 , wherein material of said die attached tape includes elastic material. 
     
     
         24 . The method in  claim 16 , further comprising a step of curing said dielectric layer. 
     
     
         25 . The method in  claim 16 , further comprising a step of forming a metal or conductive layer on the sidewall of said die receiving through hole of said substrate. 
     
     
         26 . The method in  claim 16 , further comprising a step of cleaning top surface of said package before forming said bonding wire. 
     
     
         27 . A method for forming a semiconductor device package, comprising:
 providing a substrate with at least a die receiving through hole, connecting through holes structure and first contact pads on an upper surface and second contact pads on a lower surface of said substrate;   bonding said substrate to a die redistribution tool;   redistributing desired at least first die having first bonding pads on said die redistribution tool with desired pitch by a pick and place fine alignment system;   forming a first bonding wire to connect said first bonding pads to said contact pads;   placing at least a second die having second bonding pads disposed on said first die;   forming a second bonding wire to connect said second bonding pads and said first contact pads;   forming a dielectric layer on the active surface of said first and second die and upper surface of said substrate and fill into the gap between dice edge and sidewall of said die receiving through hole of said substrate;   separating said package structure from said die redistribution tool; and   mounting said package structure on a tape to saw into individual die for singulation.   
     
     
         28 . The method in  claim 27 , further comprising a step of welding a plurality of conductive bumps on said second contact pads. 
     
     
         29 . The method in  claim 28 , wherein said step of forming said conductive bumps is performed by an infrared (IR) reflow method. 
     
     
         30 . The method in  claim 28 , wherein said step of forming said conductive bumps on said second contact pad is performed by solder paste. 
     
     
         31 . The method in  claim 27 , further comprising a step of sticking backside surface of said first die on said die redistribution tool printed by patterned glues. 
     
     
         32 . The method in  claim 27 , further comprising a step of curing said dielectric layer. 
     
     
         33 . The method in  claim 27 , further comprising a step of forming a first adhesion material on the back side of said first die. 
     
     
         34 . The method in  claim 27 , further comprising a die attached tape formed on the back side of said second die. 
     
     
         35 . The method in  claim 34 , wherein material of said die attached tape includes elastic material. 
     
     
         36 . The method in  claim 27 , further comprising a step of forming a metal layer on the sidewall of said die receiving through holes of said substrate.