Apparatus and methods for electrochemical processsing of microelectronic workpieces

Abstract

An apparatus and method for electrochemical processing of microelectronic workpieces in a reaction vessel. In one embodiment, the reaction vessel includes: an outer container having an outer wall; a distributor coupled to the outer container, the distributor having a first outlet configured to introduce a primary flow into the outer container and at least one second outlet configured to introduce a secondary flow into the outer container separate from the primary flow; a primary flow guide in the outer container coupled to the distributor to receive the primary flow from the first outlet and direct it to a workpiece processing site; a dielectric field shaping unit in the outer container coupled to the distributor to receive the secondary flow from the second outlet, the field shaping unit being configured to contain the secondary flow separate from the primary flow through at least a portion of the outer container, and the field shaping unit having at least one electrode compartment through which the secondary flow can pass while the secondary flow is separate from the primary flow; an electrode in the electrode compartment; and an interface member carried by the field shaping unit downstream from the electrode, the interface member being in fluid communication with the secondary flow in the electrode compartment, and the interface member being configured to prevent selected matter of the secondary flow from passing to the primary flow.

1 - 90 . (canceled)  
   
   
       91 . A reactor for electrochemical processing of microelectronic workpieces, comprising: 
 a reaction vessel;    a first electrode compartment and a second electrode compartment concentric with the first electrode compartment, wherein the first and second electrode compartments are in the reaction vessel;    a first electrode in the first electrode compartment and a second electrode in the second electrode compartment;    a dielectric section extending laterally inward into the reaction vessel to shield at least a portion of a workpiece from an electrical field produced by at least one of the electrodes; and    an interface member in the reaction vessel between the dielectric section and at least one of the first and second electrodes, wherein the interface member is configured to prevent selected matter in the processing fluid from passing to the workpiece.    
   
   
       92 . The reactor of  claim 91  wherein the interface member comprises an ion-membrane through which selected ions can pass.  
   
   
       93 . The reactor of  claim 92  wherein the ion-membrane comprises a perfluoronated membrane.  
   
   
       94 . The reactor of  claim 91  wherein the interface member comprises a filter.  
   
   
       95 . The reactor of  claim 94  wherein the filter comprises a porous member.  
   
   
       96 . The reactor of  claim 91  wherein the first electrode comprises a first annular conductive member and the second electrode comprises a second annular conductive member, and wherein the first annular conductive member is the innermost electrode in the reaction vessel.  
   
   
       97 . The reactor of  claim 91  wherein the dielectric section comprises a first lateral dielectric section of a field shaping unit in the reaction vessel, and the first lateral dielectric section of the field shaping unit is positioned over the first electrode.  
   
   
       98 . The reactor of  claim 97  wherein the field shaping unit further comprises a second lateral dielectric section positioned over the second electrode.  
   
   
       99 . The reactor of  claim 91  wherein the dielectric section is positioned over an outer concentric electrode.  
   
   
       100 . A reactor for electrochemically processing a microelectronic workpiece, comprising: 
 a reaction vessel having a workpiece processing zone;    a first electrode compartment in the reaction vessel below the processing zone;    a second electrode compartment in the reaction vessel below the processing zone and concentric with the first electrode compartment;    a dielectric section extending radially inward into the reaction vessel;    an interface member in the reaction vessel configured to prevent selected matter from passing from the electrode compartments to the processing zone; and    a first electrode in the first electrode compartment and a second electrode in the second electrode compartment.    
   
   
       101 . The reactor of  claim 100  wherein the interface member comprises an ion-membrane through which selected ions can pass.  
   
   
       102 . The reactor of  claim 101  wherein the ion-membrane comprises a perfluoronated membrane.  
   
   
       103 . The reactor of  claim 100  wherein the interface member comprises a filter.  
   
   
       104 . The reactor of  claim 103  wherein the filter comprises a porous member.  
   
   
       105 . The reactor of  claim 100  wherein the first electrode comprises a first annular conductive member and the second electrode comprises a second annular conductive member, and wherein the first annular conductive member is the innermost electrode in the reaction vessel.  
   
   
       106 . The reactor of  claim 100  wherein the dielectric section comprises a first lateral dielectric section of a field shaping unit in the reaction vessel, and the first lateral dielectric section of the field shaping unit is positioned over the first electrode.  
   
   
       107 . The reactor of  claim 106  wherein the field shaping unit further comprises a second lateral dielectric section positioned over the second electrode.  
   
   
       108 . The reactor of  claim 100  wherein the dielectric section is positioned over an outer concentric electrode.  
   
   
       109 . A reactor for electrochemical processing of microelectronic workpieces, comprising: 
 a reaction vessel having a workpiece processing zone;    a first electrode compartment in the reaction vessel located below the processing zone;    a second electrode compartment in the reaction vessel located below the processing zone and concentric with the first electrode compartment;    a first electrode in the first electrode compartment and a second electrode in the second electrode compartment;    a dielectric section extending laterally inward into the reaction vessel; and    an ion-membrane in the reaction vessel between the processing zone and at least one of the first and second electrodes, wherein the ion-membrane is configured such that selected ions can pass through the ion-membrane.    
   
   
       110 . The reactor of  claim 109  wherein the ion-membrane comprises a perfluorinated membrane that is permeable to copper ions.  
   
   
       111 . The reactor of  claim 109  wherein the ion-membrane is impermeable to processing fluid.  
   
   
       112 . A reactor for electrochemically processing microelectronic workpieces, comprising: 
 a reaction vessel having a weir;    a first electrode compartment and a second electrode compartment concentric with the first electrode compartment, wherein the first and second electrode compartments are in the reaction vessel and below the weir;    a first electrode in the first electrode compartment and a second electrode in the second electrode compartment;    a field shaping unit in the reaction vessel configured to obstruct at least a portion of a workpiece at the weir from at least a portion of at least one of the first and second electrodes; and    an interface member in the reaction vessel between the weir and at least one of the first and second electrodes, wherein the interface member is configured to prevent selected matter in the processing fluid from passing to the weir.    
   
   
       113 . A reactor for electrochemically processing microelectronic workpieces, comprising: 
 a reaction vessel having a workpiece processing zone;    a plurality of electrode compartments in the reaction vessel and below the processing zone;    a first electrode in one of the electrode compartments and a second electrode in another of the electrode compartments;    means for shaping an electrical field in the reaction vessel by shielding at least a portion of a workpiece at the workpiece processing zone from at least a portion of an electrical field generated by at least one of first electrode and/or the second electrode; and    means for preventing selected matter in the processing fluid from passing from the first and second electrodes to the processing zone.