Apparatus and methods for electrochemical processing of microelectronic workpieces
Abstract
An apparatus and method for electrochemical processing of microelectronic workpieces in a reaction vessel. In one embodiment, the reaction vessel includes: an outer container having an outer wall; a distributor coupled to the outer container, the distributor having a first outlet configured to introduce a primary flow into the outer container and at least one second outlet configured to introduce a secondary flow into the outer container separate from the primary flow; a primary flow guide in the outer container coupled to the distributor to receive the primary flow from the first outlet and direct it to a workpiece processing site; a dielectric field shaping unit in the outer container coupled to the distributor to receive the secondary flow from the second outlet, the field shaping unit being configured to contain the secondary flow separate from the primary flow through at least a portion of the outer container, and the field shaping unit having at least one electrode compartment through which the secondary flow can pass while the secondary flow is separate from the primary flow; an electrode in the electrode compartment; and an interface member carried by the field shaping unit downstream from the electrode, the interface member being in fluid communication with the secondary flow in the electrode compartment, and the interface member being configured to prevent selected matter of the secondary flow from passing to the primary flow.
Claims
exact text as granted — not AI-modified1 - 90 . (canceled)
91 . A reactor for electrochemical processing of microelectronic workpieces, comprising:
a reaction vessel having a workpiece processing zone; a first fluid conduit in the reaction vessel, the first fluid conduit having a first inlet configured to be coupled to a source of a first processing fluid and a primary flow channel fluidically coupled to the first inlet to direct a flow of the first processing fluid to the processing zone; a second fluid conduit in the reaction vessel, the second fluid conduit having a second inlet configured to be coupled to a source of a second processing fluid, a first electrode compartment, and a second electrode compartment concentric with the first electrode compartment, wherein the first and second electrode compartments are fluidically coupled to the second inlet to contain the second processing fluid; a first electrode in the first electrode compartment and a second electrode in the second electrode compartment; and at least one ion-membrane through which selected ions can pass between the first and second processing fluids, wherein the ion-membrane is in the reaction vessel at a location above the first and second electrodes and below the processing zone.
92 . The reactor of claim 91 wherein the first processing fluid comprises one of a catholyte or an anolyte, and the second processing fluid comprises the other of the catholyte or the anolyte.
93 . The reactor of claim 92 wherein the ion-membrane comprises a perfluoronated membrane.
94 . The reactor of claim 92 wherein the ion-membrane comprises a perfluoronated membrane through which copper ions can pass.
95 . The reactor of claim 91 wherein the first electrode comprises a first annular conductive member and the second electrode comprises a second annular conductive member.
96 . The reactor of claim 91 wherein the first annular conductive member is the innermost electrode in the reaction vessel and has a central opening through which at least one of the processing fluids can be directed.
97 . The reactor of claim 91 wherein the ion-membrane comprises a polymer that is cation selective.
98 . The reactor of claim 91 wherein the ion-membrane comprises a polymer that is anion selective.
99 . The reactor of claim 91 wherein the ion-membrane is configured to prevent particles from passing between the first and second processing fluids.
100 . The reactor of claim 91 wherein the ion-membrane is configured to prevent organic additives from passing between the first and second processing fluids.
101 . The reactor of claim 91 wherein the ion-membrane is configured to prevent bubbles from passing between the first and second processing fluids.
102 . A reactor for electrochemically processing microelectronic workpieces, comprising:
a reaction vessel having a workpiece processing zone; a first flow unit fluidically coupled to a first processing fluid and configured to direct the first processing fluid toward the processing zone; a second flow unit fluidically coupled to a second processing fluid, the second flow unit including a first electrode compartment and an annular second electrode compartment concentric with the first electrode compartment, wherein the first and second electrode compartments are configured to contain the second processing fluid; a first electrode in the first electrode compartment and a second electrode in the second electrode compartment; and at least one ion-membrane through which selected ions can pass between the first and second processing fluids, wherein the ion-membrane is in the reaction vessel at a location above the first and second electrodes and below the processing zone.
103 . The reactor of claim 102 wherein the first processing fluid comprises one of a catholyte or an anolyte, and the second processing fluid comprises the other of the catholyte or the anolyte.
104 . The reactor of claim 102 wherein the ion-membrane member comprises a perfluoronated membrane.
105 . The reactor of claim 102 wherein the ion-membrane comprises a perfluoronated membrane through which copper ions can pass.
106 . The reactor of claim 102 wherein the first electrode comprises a first conductive ring and the second electrode comprises a second conductive ring.
107 . The reactor of claim 102 wherein the first electrode is the innermost electrode in the reaction vessel and comprises a first conductive annular member having a central opening through which at least one of the processing fluids can be directed.
108 . The reactor of claim 102 , further comprising a field-shaping unit configured to shape an electric field in the reaction vessel.
109 . The reactor of claim 102 , further comprising a field-shaping unit having a plurality of annular dielectric sections that extend laterally into the reaction vessel, respectively, to shield at least a portion of a workpiece from at least a portion of an electrical field generated by the first and second electrodes.
110 . The reactor of claim 102 , further comprising a field-shaping unit including an annular dielectric section extending over at least the second electrode to shield at least a portion of the workpiece from the second electrode.
111 . A reactor for electrochemically processing microelectronic workpieces, comprising:
a reaction vessel having a workpiece processing zone; a primary fluid flow unit in the reaction vessel configured to present a first processing fluid to the processing zone; a first electrode compartment and a second electrode compartment concentric with the first electrode compartment, wherein the first and second electrode compartments are located in the reaction vessel and configured to contain a second processing fluid separate from the first processing fluid in at least a portion of the reaction vessel; a first electrode in the first electrode compartment and a second electrode in the second electrode compartment; and an ion-membrane through which selected ions can pass, the ion-membrane being in the reaction vessel at a location above the first and second electrodes and below the processing zone.
112 . The reactor of claim 111 wherein the first processing fluid comprises one of a catholyte or an anolyte, and the second processing fluid comprises the other of the catholyte or the anolyte.
113 . The reactor of claim 112 wherein the interface member comprises a perfluoronated membrane.
114 . The reactor of claim 112 wherein the interface member comprises a perfluoronated membrane through which copper ions can pass.
115 . The reactor of claim 111 wherein the first electrode comprises a first annular conductive member and the second electrode comprises a second annular conductive member.
116 . The reactor of claim 111 wherein the first annular conductive member is the innermost electrode in the reaction vessel.
117 . A reactor for electrochemical processing of microelectronic workpieces, comprising:
a reaction vessel having a workpiece processing zone; means for (a) flowing a first processing fluid through the reaction vessel to the processing zone and (b) flowing a second processing fluid through a plurality of electrode compartments in the reaction vessel separately from the first processing fluid; a first electrode in one of the electrode compartments and a second electrode in another of the electrode compartments; and means for selectively passing ions between the first and second processing fluids.Join the waitlist — get patent alerts
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