US2008286697A1PendingUtilityA1

Method and apparatus for processing a wafer

Assignee: VERHAVERBEKE STEVENPriority: Aug 31, 2001Filed: Oct 26, 2007Published: Nov 20, 2008
Est. expiryAug 31, 2021(expired)· nominal 20-yr term from priority
H10P 72/0474H10P 72/0464H10P 72/0462H10P 72/0461H10P 72/0456H10P 72/0454H10P 72/0421H10P 72/0452
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Claims

Abstract

A method of a single wafer wet/dry cleaning apparatus comprising: a transfer chamber having a wafer handler contained therein; a first single wafer wet cleaning chamber directly coupled to the transfer chamber; and a first single wafer ashing chamber directly coupled to the transfer chamber.

Claims

exact text as granted — not AI-modified
1 . A method of photolithographic processing of a wafer comprising:
 forming a photoresist film on a first side of a wafer having said first side and a second side opposite said first side;   cleaning said wafer second side with a solution while said photoresist is on said wafer first side; and   exposing said photoresist film on said wafer first side to radiation after cleaning said wafer second side with said solution.   
     
     
         2 . The method of  claim 1  wherein said cleaning of said wafer second side comprises:
 horizontally positioning said wafer second side adjacent to and spaced-apart from a horizontal plate; and   providing said solution between said plate and said wafer second side.   
     
     
         3 . The method of  claim 2  further comprising applying acoustic energy to a second side of said plate while flowing said fluid between said plate and said wafer second side. 
     
     
         4 . The method of  claim 3  wherein said acoustic energy is applied in a direction normal to said wafer second side. 
     
     
         5 . The method of  claim 5  wherein said acoustic energy is applied at a frequency of approximately 925 KHz. 
     
     
         6 . The method of  claim 1  wherein said wafer frontside is kept dry while cleaning said wafer backside. 
     
     
         7 . The method of  claim 1  wherein said wafer first side has a plurality of patterns formed thereon.

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