US2008315387A1PendingUtilityA1

Semiconductor Package-on-Package System Including Integrated Passive Components

Assignee: TEXAS INSTRUMENTS INCPriority: May 1, 2006Filed: Sep 5, 2008Published: Dec 25, 2008
Est. expiryMay 1, 2026(expired)· nominal 20-yr term from priority
H05K 2201/1053H05K 2201/10515H05K 3/3436H05K 2201/10734H05K 1/141H10W 90/754H10W 90/734H10W 90/724H10W 90/722H10W 72/884H10W 72/248H10W 90/00
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Claims

Abstract

A semiconductor system ( 300 ) has one or more packaged active subsystems ( 310, 330 ); each subsystem has a substrate with electrical contact pads and one or more semiconductor chips stacked on top of each other, assembled on the substrate. The system further has a packaged passive subsystem ( 320 ) including a substrate with electrical contacts and passive electrical components, such as resistors, capacitors, and indictors. The passive subsystem is stacked with the active subsystems and connected to them by solder bodies.

Claims

exact text as granted — not AI-modified
1 . A semiconductor system comprising:
 a first device, a second device, and a third device; and   in which the first device including a first insulating substrate having a first surface and a second surface and electrical contact pads on the first surface and the second surface; and a first semiconductor chip affixed on the first surface; and   in which the second device including a second insulating substrate paralleling the first substrate having a third surface and a fourth surface and electrical contact pads on the third surface and the fourth surface; and a second semiconductor chip affixed on the third surface; and metal reflow bodies joining the electrical contact pads on the fourth surface and the electrical contact pads on the first surface; the first surface covered by molding compound and the fourth surface not covered by molding compound; and   in which the third device including a third insulating substrate paralleling the first substrate having a fifth surface and a sixth surface and electrical contact pads on the fifth surface and the sixth surface; and passive electrical components affixed on the fifth surface; and metal reflow bodies joining the electrical contact pads on the third surface and the electrical contact pads on the sixth surface, which is not covered by molding compound; and   molding compound covering the passive devices and the fifth surface from edge to edge.   
   
   
       2 . The system according to  claim 1  in which the passive electrical components include resistors, capacitors, and inductors. 
   
   
       3 . The system according to  claim 1  in which the first semiconductor chip includes a stacked semiconductor chips electrically connected to contact pads on the first substrate surface. 
   
   
       4 . The system according to  claim 1  in which the second semiconductor chip includes a stacked semiconductor chips electrically connected to contact pads on the third substrate surface. 
   
   
       5 . A method for fabricating a semiconductor system comprising the steps of:
 affixing a first semiconductor chip to a first surface of a first insulating substrate;   electrically connecting the first semiconductor chip to contact pads on the first surface of the first substrate;   encapsulating the first surface including the first semiconductor chip with a molding compound except the contact pads;   affixing a second semiconductor chip to a third surface of a second insulating substrate;   electrically connecting the second semiconductor chip to contact pads on the third surface of the second substrate;   encapsulating the third surface including the second semiconductor chip with a molding compound except the contact pads;   joining a fourth surface of the second substrate and the first surface of the first substrate with metal reflow bodies;   affixing a passive electrical component to a fifth surface of a third insulating substrate;   electrically connecting the passive electrical component to contact pads on the fifth surface of the third substrate;   encapsulating the fifth surface including the passive electrical component with a molding compound from edge to edge; and   joining a sixth surface of the third substrate and the fifth surface of the second substrate with metal reflow bodies.   
   
   
       6 . The method according to  claim 5 , in which the first substrate adapted to be singulated into individual packaged semiconductor systems. 
   
   
       7 . The method according to  claim 6  further including the step of singulating the first substrate into individual packaged semiconductor systems. 
   
   
       8 . The method according to  claim 5  further including the step of attaching metal reflow bodies to the contact pads on the first surface. 
   
   
       11 . The method according to  claim 5 , in which the first semiconductor chip includes a stack of semiconductor chips, each chip flip-chip bonded or wire-bonded to the first substrate. 
   
   
       12 . The method according to  claim 5 , in which the second semiconductor chip includes a stack of semiconductor chips, each chip flip-chip bonded or wire-bonded to the second substrate. 
   
   
       13 . The method according to  claim 5 , in which the passive electrical component includes a plurality of passive electrical components including resistors and capacitors. 
   
   
       14 . The method according to  claim 13 , in which the passive electrical component further includes an inductor.

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