US2009057143A1PendingUtilityA1

Film-depositing target and preparation of phase shift mask blank

Assignee: YOSHIKAWA HIROKIPriority: Mar 31, 2004Filed: Oct 28, 2008Published: Mar 5, 2009

Est. expiryMar 31, 2024(expired)· nominal 20-yr term from priority

Inventors:Hiroki Yoshikawa Toshinobu Ishihara Satoshi Okazaki Yukio Inazuki Tadashi Saga Kimihiro Okada Masahide Iwakata Takashi Haraguchi Yuichi Fukushima

A61F 2013/00842C23C 14/3464C23C 14/06G03F 1/32A61F 13/0203C23C 14/3414

PatentIndex Score

Cited by

References

Claims

Abstract

A film-depositing target for use in the manufacture of a halftone phase shift mask blank includes a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film including silicon, molybdenum and zirconium at the same time as constituent elements, and at least two elements, zirconium and molybdenum in a molar ratio Zr/Mo between 0.05 and 5.

Claims

exact text as granted — not AI-modified

1 . A film-depositing target for use in the manufacture of a halftone phase shift mask blank comprising a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film comprising silicon, molybdenum and zirconium at the same time as constituent elements,
 said target comprising at least two elements, zirconium and molybdenum in a molar ratio Zr/Mo between 0.05 and 5.   
   
   
       2 . A film-depositing target for use in the manufacture of a halftone phase shift mask blank comprising a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film comprising silicon, molybdenum and zirconium at the same time as constituent elements,
 said target comprising at least three elements, silicon, molybdenum and zirconium, with zirconium and molybdenum being present in a molar ratio Zr/Mo between 0.05 and 5.   
   
   
       3 . The target of  claim 2 , wherein the target comprises 80 to 97 mole % of silicon.

Join the waitlist — get patent alerts

Track US2009057143A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.