Cleaning solution formulations for substrates

Abstract

A semiconductor system includes: providing a dielectric layer; providing a conductor in the dielectric layer, the conductor exposed at the top of the dielectric layer; capping the exposed conductor; and modifying the surface of the dielectric layer, modifying the surface of the dielectric layer, wherein modifying the surface includes cleaning conductor ions from the dielectric layer by dissolving the conductor in a low pH solution, dissolving the dielectric layer under the conductor ions, mechanically enhanced cleaning, or chemisorbing a hydrophobic layer on the dielectric layer.

1 . A cleaning solution comprising:
 a corrosion inhibitor;   an oxygen scavenger; and   a complexing agent also capable as a pH adjustor.   
   
   
       2 . The cleaning solution of  claim 1 , wherein the corrosion inhibitor is a triazole compound. 
   
   
       3 . The cleaning solution of  claim 1 , wherein the corrosion inhibitor comprises a toluol triazole or a benzotriazole. 
   
   
       4 . The cleaning solution of  claim 1 , wherein the corrosion inhibitor is present at a concentration between 0.1 to 10000 ppm and all subranges subsumed therein. 
   
   
       5 . The cleaning solution of  claim 1 , wherein the corrosion inhibitor is present at a concentration between 100 to 2000 ppm and all subranges subsumed therein. 
   
   
       6 . The cleaning solution of  claim 1 , wherein the corrosion inhibitor comprises a triazole compound at a concentration between 0.1 to 10000 ppm and all subranges subsumed therein. 
   
   
       7 . The cleaning solution of  claim 1 , wherein the corrosion inhibitor comprises a triazole compound at a concentration between 100 to 2000 ppm and all subranges subsumed therein. 
   
   
       8 . The cleaning solution of  claim 1 , wherein the oxygen scavenger comprises L-ascorbic acid. 
   
   
       9 . The cleaning solution of  claim 1 , wherein the corrosion inhibitor comprises a triazole compound and the oxygen scavenger comprises L-ascorbic acid. 
   
   
       10 . The cleaning solution of  claim 1 , wherein the corrosion inhibitor comprises a toluol triazole or a benzotriazole and the oxygen scavenger comprises L-ascorbic acid. 
   
   
       11 . The cleaning solution of  claim 1 , wherein the corrosion inhibitor comprises a triazole compound at a concentration between 0.1 to 10000 ppm and all subranges subsumed therein and the oxygen scavenger comprises L-ascorbic acid. 
   
   
       12 . The cleaning solution of  claim 1 , wherein the corrosion inhibitor comprises a triazole compound at a concentration between 100 to 2000 ppm and all subranges subsumed therein and the oxygen scavenger comprises L-ascorbic acid. 
   
   
       13 . The cleaning solution of  claim 1 , wherein the oxygen scavenger comprises L-ascorbic acid at a concentration between 0 to 10000 ppm and all subranges subsumed therein. 
   
   
       14 . The cleaning solution of  claim 1 , wherein the oxygen scavenger comprises L-ascorbic acid at a concentration between 1000 to 5000 ppm and all subranges subsumed therein. 
   
   
       15 . The cleaning solution of  claim 1 , wherein the complexing agent comprises oxalic acid. 
   
   
       16 . The cleaning solution of  claim 1 , wherein the corrosion inhibitor comprises a triazole compound, the oxygen scavenger comprises L-ascorbic acid; and the complexing agent comprises oxalic acid. 
   
   
       17 . The cleaning solution of  claim 1 , wherein the corrosion inhibitor comprises a toluol triazole or a benzotriazole; the oxygen scavenger comprises L-ascorbic acid; and the complexing agent comprises oxalic acid. 
   
   
       18 . The cleaning solution of  claim 1 , wherein the corrosion inhibitor comprises a triazole compound at a concentration between 0.1 to 10000 ppm and all subranges subsumed therein; the oxygen scavenger comprises L-ascorbic acid; and the complexing agent comprises oxalic acid. 
   
   
       19 . The cleaning solution of  claim 1 , wherein the corrosion inhibitor comprises a triazole compound at a concentration between 100 to 2000 ppm and all subranges subsumed therein; the oxygen scavenger comprises L-ascorbic acid; and the complexing agent comprises oxalic acid. 
   
   
       20 . The cleaning solution of  claim 1 , wherein the oxygen scavenger comprises L-ascorbic acid at a concentration between 0 to 10000 ppm and all subranges subsumed therein; and the complexing agent comprises oxalic acid. 
   
   
       21 . The cleaning solution of  claim 1 , wherein the oxygen scavenger comprises L-ascorbic acid at a concentration between 1000 to 5000 ppm and all subranges subsumed therein; and the complexing agent comprises oxalic acid. 
   
   
       22 . The cleaning solution of  claim 1 , wherein the complexing agent comprises oxalic acid at a concentration between 2 to 50 g/L and all subranges subsumed therein. 
   
   
       23 . The cleaning solution of  claim 1 , wherein:
 the corrosion inhibitor comprises a triazole compound at a concentration between 0.1 to 10000 ppm and all subranges subsumed therein;   the oxygen scavenger comprises L-ascorbic acid at a concentration between 0 to 10000 ppm and all subranges subsumed therein; and   the complexing agent comprises oxalic acid at a concentration between 5 to 15 g/L and all subranges subsumed therein.   
   
   
       24 . The cleaning solution of  claim 1 , wherein:
 the corrosion inhibitor comprises a triazole compound at a concentration between 100 to 2000 ppm and all subranges subsumed therein;   the oxygen scavenger comprises L-ascorbic acid at a concentration between 1000 to 5000 ppm and all subranges subsumed therein; and   the complexing agent comprises oxalic acid at a concentration between 5 to 15 g/L and all subranges subsumed therein.   
   
   
       25 . The cleaning solution of  claim 1 , wherein the solution has a pH from 1.5 to 2.0.