Method for silicon based dielectric chemical vapor deposition

Abstract

Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes heating a substrate disposed in a processing chamber to a temperature less than about 550 degrees Celsius; flowing a nitrogen and carbon containing chemical comprising (H 3 C)—N═N—H into the processing chamber; flowing a silicon-containing source chemical with silicon-nitrogen bonds into the processing chamber; and depositing a silicon and nitrogen containing film on the substrate.

1 . A method for depositing a silicon-containing film on a substrate, the method comprising:
 heating a substrate disposed in a processing chamber to a temperature less than about 550 degrees Celsius;   flowing a nitrogen and carbon containing chemical comprising (H 3 C)—N═N—H into the processing chamber;   flowing a silicon-containing source chemical with silicon-nitrogen bonds into the processing chamber; and   depositing a silicon and nitrogen containing film on the substrate.   
   
   
       2 . The method of  claim 1 , wherein the silicon-containing source chemical is at least one of (SiR 3 ) 3 —N, (SiR 3 ) 2 N—N(SiR 3 ) 2  and (SiR 3 )N═(SiR 3 )N, wherein R is hydrogen (H), or a hydrocarbon reagent or a fragment consisting of methyl, ethyl, phenyl, tertiary butyl and their combinations. 
   
   
       3 . The method of  claim 2 , wherein the R is free of halogens and contains hydrogen. 
   
   
       4 . The method of  claim 2 , wherein the R includes one or more halogen elements. 
   
   
       5 . The method of  claim 1 , wherein the silicon-containing source chemical is (SiH 3 ) 3 —N, (SiH 3 ) 2 N—N(SiH 3 ) 2 , (SiH 3 )N═(SiH 3 )N. 
   
   
       6 . The method of  claim 1 , wherein a deposition rate of the silicon and nitrogen containing film is between about 10 to about 500 Angstroms/second. 
   
   
       7 . The method of  claim 1 , further comprising:
 providing a carrier gas to control the partial pressure of at least one of the nitrogen and carbon containing chemical or the silicon-containing source chemical, wherein the partial pressure is between about 0.1 to about 1 Torr.   
   
   
       8 . The method of  claim 7 , wherein the carrier gas includes at least one of nitrogen (N 2 ), argon (Ar), or helium (He). 
   
   
       9 . The method of  claim 1 , wherein the silicon-containing source chemical is trisilylamine. 
   
   
       10 . The method of  claim 1 , wherein the step of heating the substrate further comprises:
 heating the substrate to a temperature between about 300 to about 500 degrees Celsius; and   maintaining a pressure within the processing chamber between about 10 to 740 Torr.   
   
   
       11 . The method of  claim 1  further comprising:
 flowing an oxygen precursor into the processing chamber, wherein the oxygen precursor is at least one of atomic-oxygen, oxygen (O 2 ), ozone (O 3 ), H 2 O, H 2 O 2 , organic peroxides, alcohols, N 2 O, NO, NO 2 , N 2 O 5  and derivatives thereof.   
   
   
       12 . The method of  claim 1 , wherein the step of depositing the silicon-containing film further comprises:
 depositing a single atomic layer of silicon-containing material.   
   
   
       13 . A method for depositing a silicon-containing film on a substrate, the method comprising:
 heating a substrate disposed in a processing chamber to a temperature between about 400-500 degrees Celsius;   flowing a nitrogen and carbon containing chemical comprising (H 3 C)—N═N—H into the processing chamber;   flowing a silicon-containing source chemical with silicon-nitrogen bonds into the processing chamber, wherein the silicon-containing source chemical is at least one of (SiR 3 ) 3 —N, (SiR 3 ) 2 N—N(SiR 3 ) 2  and (SiR 3 )N═(SiR 3 )N, wherein R is hydrogen (H), or a hydrocarbon reagent or a fragment consisting of methyl, ethyl, phenyl, tertiary butyl and their combinations; and   depositing a silicon and nitrogen containing film on the substrate.   
   
   
       14 . The method of  claim 13 , wherein the R is free of halogens and contains hydrogen. 
   
   
       15 . The method of  claim 13 , wherein the R includes one or more halogen elements. 
   
   
       16 . The method of  claim 13 , wherein the silicon-containing source chemical is (SiH 3 ) 3 —N, (SiH 3 ) 2 N—N(SiH 3 ) 2 , or (SiH 3 )N═(SiH 3 )N. 
   
   
       17 . The method of  claim 13 , wherein a deposition rate of the silicon and nitrogen containing film is between about 10 to about 500 Angstroms/second. 
   
   
       18 . The method of  claim 13 , further comprising:
 providing a carrier gas to control the partial pressure of at least one of the nitrogen and carbon containing chemical or the silicon-containing source chemical, wherein the partial pressure is between about 0.1 to about 1 Torr.   
   
   
       19 . The method of  claim 19 , wherein the carrier gas includes at least one of nitrogen (N 2 ), argon (Ar), or helium (He). 
   
   
       20 . The method of  claim 13 , further comprising:
 flowing an oxygen precursor into the processing chamber, wherein the oxygen precursor is at least one of atomic-oxygen, oxygen (O 2 ), ozone (O 3 ), H 2 O, H 2 O 2 , organic peroxides, alcohols, N 2 O, NO, NO 2 , N 2 O 5  and derivatives thereof.