Substrate treating system for depositing a metal gate on a high-k dielectric film and improving high-k dielectric film and metal gate interface

Abstract

An apparatus to improve high-k dielectric film and metal gate interface in the fabrication of MOSFET by depositing a metal gate on a high-k dielectric comprising an annealing step annealing a substrate with high-k dielectric film deposited thereon in a thermal annealing module and a depositing step depositing a metal gate material on said annealed substrate in a metal gate deposition module, characterized that said annealing step and depositing step are carried out consecutively without a vacuum break.

1 . A substrate treating system comprising a wafer-handling platform including a transfer device to transfer a substrate and a processing module connected to said wafer-handling platform; wherein
 said processing module includes at least a thermal annealing module and a metal gate deposition module; and   said transfer device is adapted to transfer the substrate between said wafer-handling platform and said processing module without a vacuum break.   
   
   
       2 . The substrate treating system according to  claim 1 , wherein said processing module further includes a cooling module or a high-k higher dielectric material deposition module. 
   
   
       3 . The substrate treating system according to  claim 1 , wherein said processing module further includes a cooling module and a high-k higher dielectric material deposition module. 
   
   
       4 . A substrate treating apparatus comprising:
 an angled-PVD module configured and positioned to deposit a starting material on a substrate;   a thermal annealing module configured and positioned to anneal a substrate on which the starting material is deposited; and   a transfer device configured and positioned to deliver the substrate to the angled-PVD module and the thermal annealing module.