Inventor · disambiguated record
Naomu Kitano
Also filed as: KITANO NAOMU
22 granted patents·5 pending applications·73 citations·filing 2006–2018
93Inventor score
Top patents by PatentIndex Score
27 records- 0187US7867847B2Method of manufacturing dielectric film that has hafnium-containing and aluminum-containing oxynitrideCANON ANELVA CORP·Filed 2010·Granted Jan 11, 2011·7 cites·9 claims
- 0286US8088678B2Semiconductor manufacturing apparatus and methodKITANO NAOMU·Filed 2009·Granted Jan 3, 2012·15 cites·13 claims
- 0384US8030694B2Dielectric film and semiconductor device using dielectric film including hafnium, aluminum or silicon, nitrogen, and oxygenCANON ANELVA CORP·Filed 2010·Granted Oct 4, 2011·5 cites·17 claims
- 0484US7857946B2Sputtering film forming method, electronic device manufacturing method, and sputtering systemCANON ANELVA CORP·Filed 2008·Granted Dec 28, 2010·7 cites·9 claims
- 0582US8178934B2Dielectric film with hafnium aluminum oxynitride filmKITANO NAOMU·Filed 2010·Granted May 15, 2012·5 cites·1 claims
- 0677US7923360B2Method of forming dielectric filmsCANON KK·Filed 2008·Granted Apr 12, 2011·5 cites·9 claims
- 0776US8053311B2Dielectric film and semiconductor device using dielectric film including hafnium, aluminum or silicon, nitrogen, and oxygenCANON ANELVA CORP·Filed 2010·Granted Nov 8, 2011·3 cites·8 claims
- 0875US8324608B2Nonvolatile storage element and manufacturing method thereofNAKAGAWA TAKASHI·Filed 2012·Granted Dec 4, 2012·3 cites·7 claims
- 0973US8415753B2Semiconductor device and method of manufacturing the sameNAKAGAWA TAKASHI·Filed 2010·Granted Apr 9, 2013·4 cites·13 claims
- 1073US8288234B2Method of manufacturing hafnium-containing and silicon-containing metal oxynitride dielectric filmSEINO TAKUYA·Filed 2010·Granted Oct 16, 2012·4 cites·21 claims
- 1170US7655549B2Method for depositing a metal gate on a high-k dielectric filmCANON ANELVA CORP·Filed 2006·Granted Feb 2, 2010·4 cites·20 claims
- 1267US8481382B2Method and apparatus for manufacturing semiconductor deviceCANON ANELVA CORP·Filed 2012·Granted Jul 9, 2013·2 cites·8 claims
- 1363US8835296B2Electronic component manufacturing method including step of embedding metal filmWAKAYANAGI SHUNICHI·Filed 2011·Granted Sep 16, 2014·3 cites·13 claims
- 1462US8012822B2Process for forming dielectric filmsCANON KK·Filed 2008·Granted Sep 6, 2011·1 cites·8 claims
- 1561US8232189B2Dielectric film manufacturing methodONO JUNKO·Filed 2010·Granted Jul 31, 2012·2 cites·15 claims
- 1658US8148275B2Method for forming dielectric filmsFUKUCHI YUSUKE·Filed 2008·Granted Apr 3, 2012·2 cites·6 claims
- 1757US8026143B2Semiconductor element and manufacturing method thereofCANON ANELVA CORP·Filed 2007·Granted Sep 27, 2011·1 cites·7 claims
- 1850US2009178621A1Substrate treating system for depositing a metal gate on a high-k dielectric film and improving high-k dielectric film and metal gate interfaceCANON ANELVA CORP·Filed 2009·Application pending·0 cites
- 1949US2009170300A1Semiconductor element and manufacturing method thereofCANON ANELVA CORP·Filed 2009·Application pending·0 cites
- 2045US10297797B2Method for manufacturing display deviceJAPAN DISPLAY INC·Filed 2018·Granted May 21, 2019·0 cites·13 claims
- 2142US9437702B2Electronic component manufacturing method and electrode structureCANON ANELVA CORP·Filed 2014·Granted Sep 6, 2016·0 cites·16 claims
- 2242US8669624B2Semiconductor device and manufacturing method thereofKITANO NAOMU·Filed 2012·Granted Mar 11, 2014·0 cites·4 claims
- 2342US8524617B2Methods for manufacturing dielectric filmsNAKAGAWA TAKASHI·Filed 2010·Granted Sep 3, 2013·0 cites·12 claims
- 2439US8786031B2Metal nitride film, semiconductor device using the metal nitride film, and manufacturing method of semiconductor deviceNAKAGAWA TAKASHI·Filed 2011·Granted Jul 22, 2014·0 cites·10 claims
- 2537US2011312179A1Substrate processing method and substrate processing apparatusNAKAGAWA TAKASHI·Filed 2011·Application pending·0 cites
- 2635US2010133092A1Sputtering method and sputtering apparatusCANON ANELVA CORP·Filed 2010·Application pending·0 cites
- 2734US2012199919A1Semiconductor device and method of manufacturing the sameNAKAGAWA TAKASHI·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →