Semiconductor element and manufacturing method thereof

Abstract

The object of the present invention is to provide a method of manufacturing high permittivity gate dielectrics for a device such as an MOSFET. A HfSiO film 104 is formed by sputtering a Hf metal film 103 on a SiO 2 film (or a SiON film) 102 on a Si wafer 101 . A TiO 2 film 106 is formed by sputtering a Ti metal film 105 on the HfSiO film 104 and subjecting the Ti metal film 105 to a thermal oxidation treatment. A TiN metal film 107 is deposited on the TiO 2 film 106 . The series of treatments are performed continuously, without exposing the films and the wafer to atmospheric air. The resultant TiN/TiO 2 /HfSiO/SiO 2 /Si structure satisfies the conditions: EOT<1.0 nm, low leakage current, and hysteresis<20 mV.

1 - 14 . (canceled) 
   
   
       15 . A method of manufacturing a semiconductor device, comprising:
 a first step for depositing metal composite films on a silicon dioxide (SiO 2 ) film or a silicon oxynitrided (SiON) film by means of a co-sputtering method using different metal targets in an atmosphere where oxidation reaction of metal atoms hardly occurs;   a second step for subjecting the metal composite films to a thermal oxidation treatment; and   a third step for forming a metal electrode material on high permittivity gate dielectrics formed by being subjected to the thermal oxidation treatment;   wherein the steps are performed continuously.   
   
   
       16 . The method of manufacturing a semiconductor device according to  claim 15 , wherein the deposited metal composite films in the first step include at least either hafnium or titanium. 
   
   
       17 . The method of manufacturing a semiconductor device according to  claim 15 , wherein the second step is performed at a heating temperature of 500° C. to 900° C. 
   
   
       18 . The method of manufacturing a semiconductor device according to  claim 15 , wherein the second step is performed at a heating temperature of 500° C. to 900° C., and at an oxidation treatment pressure of 1×10 −3  [Pa] to 10 [Pa]. 
   
   
       19 . The method of manufacturing a semiconductor device according to  claim 15 , wherein the metal electrode film in the third step is formed by means of a reactive sputtering method using deposition equipment enabling oxygen and nitrogen or nitrogen monoxide, or oxygen and nitrogen to be introduced simultaneously. 
   
   
       20 . The method of manufacturing a semiconductor device according to  claim 15 , wherein the metal electrode film in the third step is metal composite films of binary or more system formed by discharging at least two or more cathodes simultaneously. 
   
   
       21 . The method of manufacturing a semiconductor device according to  claim 15 , wherein the metal electrode film includes one kind, or two kinds or more metal elements selected from the group consisted of Zr, C, Hf, Ta, Ti, Al, Ru, Si, Ni, Pt, Ir, Er, Yb, La, Dy, Y, Gd, Co, and W. 
   
   
       22 . A method of manufacturing a semiconductor device, comprising:
 a first step for depositing metal stacked films on a silicon dioxide (SiO 2 ) film or a silicon oxynitrided (SiON) film by means of a co-sputtering method using different metal targets in an atmosphere where oxidation reaction of metal atoms hardly occurs;   a second step for subjecting the metal stacked films to a thermal oxidation treatment; and   a third step for forming a metal electrode material on high permittivity gate dielectrics formed by being subjected to the thermal oxidation treatment;   wherein the steps are performed continuously.   
   
   
       23 . The method of manufacturing a semiconductor device according to  claim 22 , wherein the deposited metal stacked films in the first step include at least either hafnium or titanium. 
   
   
       24 . The method of manufacturing a semiconductor device according to  claim 22 , wherein the second step is performed at a heating temperature of 500° C. to 900° C. 
   
   
       25 . The method of manufacturing a semiconductor device according to  claim 22 , wherein the second step is performed at a heating temperature of 500° C. to 900° C., and at an oxidation treatment pressure of 1×10 −3  [Pa] to 10 [Pa]. 
   
   
       26 . The method of manufacturing a semiconductor device according to  claim 22 , wherein the metal electrode film in the third step is formed by means of a reactive sputtering method using deposition equipment enabling oxygen and nitrogen or nitrogen monoxide, or oxygen and nitrogen to be introduced simultaneously. 
   
   
       27 . The method of manufacturing a semiconductor device according to  claim 22 , wherein the metal electrode film in the third step is metal composite films of binary or more system formed by discharging at least two or more cathodes simultaneously. 
   
   
       28 . The method of manufacturing a semiconductor device according to  claim 22 , wherein the metal electrode film in the third step includes one kind, or two kinds or more metal elements selected from the group consisted of Zr, C, Hf, Ta, Ti, Al, Ru, Si, Ni, Pt, Ir, Er, Yb, La, Dy, Y, Gd, Co, and W. 
   
   
       29 - 32 . (canceled)