Conductive line structure and the method of forming the same

Abstract

The conductive line structure of a semiconductor device including a base; at least one patterned conductive layer formed over the base; a conductive line formed over the at least one patterned conductive layer; a protection layer that encompasses the top surface and sidewall of the conductive line to prevent undercut generated by etching. The structure further comprises an underlying layer under the conductive line. The underlying layer includes Ni, Cu or Pt. The conductive line includes gold or copper. The at least one patterned conductive layer includes at least Ti/Cu. The protection layer includes electro-less plating Sn, Au, Ag or Ni.

1 . A conductive line structure of a semiconductor device, comprising:
 a base;   at least one patterned conductive layer formed over said base;   a conductive line formed over said at least one patterned conductive layer; and   a protection layer encompassing the top surface and sidewall of said conductive line to prevent undercut generated by etching.   
   
   
       2 . The structure of  claim 1 , further comprising an underlying layer under said conductive line. 
   
   
       3 . The structure of  claim 2 , wherein said underlying layer includes Ni, Au or Pt. 
   
   
       4 . The structure of  claim 1 , wherein said conductive line includes gold. 
   
   
       5 . The structure of  claim 1 , wherein said conductive line includes copper. 
   
   
       6 . The structure of  claim 1 , wherein said at least one patterned conductive layer includes at least Ti/Cu. 
   
   
       7 . The structure of  claim 1 , wherein said protection layer includes electro-less plating Sn. 
   
   
       8 . The structure of  claim 1 , wherein said protection layer includes electro-less plating Au. 
   
   
       9 . The structure of  claim 1 , wherein said protection layer includes electro-less plating Ag. 
   
   
       10 . The structure of  claim 1 , wherein said protection layer includes electro-less plating Ni. 
   
   
       11 . A method of forming conductive line structure of semiconductor device, comprising:
 providing a base;   forming at least one conductive layer over said base;   patterning a photo-resist pattern over said at least one conductive layer to expose a top layer of said at least one conductive layer;   etching said top layer of said at least one conductive layer;   forming an underlying layer over said etched at least one conductive layer;   forming a conductive line over said underlying layer;   stripping said photo-resist pattern;   forming a protection layer to encompass the top surface and sidewall of said conductive line to prevent undercut generated by etching.   
   
   
       12 . The method of  claim 11 , wherein said underlying layer includes Ni, Au or Pt. 
   
   
       13 . The method of  claim 11 , wherein said conductive line includes gold. 
   
   
       14 . The method of  claim 11 , wherein said conductive line includes copper. 
   
   
       15 . The method of  claim 11 , wherein said conductive line is formed by electroplating. 
   
   
       16 . The method of  claim 11 , wherein said at least one patterned conductive layer includes Ti/Cu/Ti. 
   
   
       17 . The method of  claim 12 , wherein said at least one patterned conductive layer is formed by sputter. 
   
   
       18 . The method of  claim 11 , wherein said protection layer is formed by electro-less plating Sn. 
   
   
       19 . The method of  claim 11 , wherein said protection layer is formed by electro-less plating Au. 
   
   
       20 . The method of  claim 11 , wherein said protection layer is formed by electro-less plating Ag. 
   
   
       21 . The method of  claim 11 , wherein said protection layer is formed by electro-less plating Ni.