Substrate Processing Apparatus and Producing Method of Semiconductor Device

Abstract

A substrate treatment apparatus includes a reaction tube and a heater heating a silicon wafer. Trimethyl aluminum (TMA) and ozone (O 3 ) are alternately fed into the reaction tubeto generate Al 2 O 3 film on the surface of the wafer. The apparatus also includes supply tubes and for flowing the ozone and TMA and a nozzle supplying gas into the reaction tube. The two supply tubes are connected to the nozzle disposed inside the heater in a zone inside the reaction tube where a temperature is lower than a temperature near the wafer, and the ozone and TMA are supplied into the reaction tube through the nozzle.

1 . A producing method of a semiconductor device, comprising:
 transferring a plurality of substrates into a processing chamber of a substrate processing apparatus comprising:
 the processing chamber which accommodates the plurality of substrates with the substrates being stacked therein; 
 a heating member which heats the substrates; 
 two supply tubes through which two gases respectively flow independently from each other; and 
 a single gas supply member which supplies the gases into the processing chamber and which has a portion extending along a stacked direction of the substrates to a region whose temperature is equal to or higher than a decomposition temperature of at least one of the two gases, wherein 
 the two supply tubes are connected to the gas supply member at a location whose temperature is lower than the decomposition temperature of the at least one gas, the two gases are supplied into the processing chamber through the gas supply member, and a connection portion of the two supply tubes and the gas supply 
   member is disposed in the processing chamber;   forming films on surfaces of the substrates and on an inner wall of the gas supply member by repeating:
 supplying a first one of the two gases into the processing chamber; 
 removing the first gas and an intermediate thereof which have been remained in the processing chamber; 
 supplying a second one of the two gases into the processing chamber; and 
 removing the second gas and an intermediate thereof which have been remained in the processing chamber; 
 transferring the plurality of substrates out from the processing chamber; and 
 supplying a cleaning gas into the processing chamber through the gas supply member, thereby performing cleaning of the processing chamber and removing the film formed on the gas supply member.