Inspection Method And Inspection System Using Charged Particle Beam

Abstract

An electron beam system includes a sample holder to hold a sample, electron optics to obtain an image of the sample, an electrode to control a charged state of the sample, a monitor to determine a range of voltage applied to the electrode, and a processing unit to obtain plural images of different charged states of the sample in accordance with a change of the applied to the electrode and to determine voltage from the voltage contrasts of the images.

1 . An electron beam system comprising:
 a sample holder to hold a sample;   electron optics to obtain an image of the sample;   an electrode to control a charged state of the sample;   a monitor to determine a range of voltage applied to the electrode; and   a processing unit to obtain plural images of different charged states of the sample in accordance with a change of the applied to the electrode and to determine voltage from the voltage contrasts of the images.   
   
   
       2 . An electron beam system according to  claim 1 , wherein the voltage is determined on a basis of a histogram of the voltage contrast of the image. 
   
   
       3 . An electron beam system according to  claim 1 , wherein the range is determined by displaying on the monitor an input of minimum voltage and a maximum voltage on the monitor. 
   
   
       4 . An electron beam system according to  claim 3 , wherein an increment/decrement value between the minimum voltage and the maximum voltage is input to the monitor and the processing unit changes the voltage by the increment/decrement unit. 
   
   
       5 . An electron beam system according to  claim 1 , wherein the image obtained by applying the determined voltage to the electrode is displayed on the monitor. 
   
   
       6 . An electron beam system according to  claim 5 , wherein the processing unit conducts an inspection of the sample by using the image obtained by applying the determined voltage to the electrode. 
   
   
       7 . An electron beam system comprising:
 a sample holder to hold a sample;   electron optics to obtain an image of the sample;   a monitor to determine a range of a parameter of a condition of the electron optics condition to obtain the image; and   a processing unit to obtain plural of images of the sample under different electron optics conditions in accordance with the range and to determine the parameter from voltage contrasts of the images.   
   
   
       8 . An electron beam system according to  claim 7 , wherein the parameter of the electron optics condition is one of an electron beam current of the electron optics, an electron beam energy of the electron optics, a retarding voltage applied to the sample holder, a voltage applied to an electrode to control a charged state of the sample. 
   
   
       9 . An electron beam system according to  claim 7 , wherein the parameter is determined on a basis of a histogram of the voltage contrast of the image. 
   
   
       10 . An electron beam system according to  claim 7 , wherein the range is determined by input of a minimum and a maximum of the parameter to the monitor. 
   
   
       11 . An electron beam system according to  claim 10 , wherein an increment/decrement value between the minimum and the maximum is input to the monitor, and the processing unit changes a value of the parameter by the increment/decrement value. 
   
   
       12 . An electron beam system according to  claim 7 , wherein the image obtained under the determined parameter of the electron optics condition is displayer on the monitor. 
   
   
       13 . An electron beam system according to  claim 12 , wherein the processing unit conducts an inspection of the sample by using the image obtained under the determined parameter of the electron optics condition. 
   
   
       14 . An electron beam system comprising:
 a sample holder to hold a sample;   an electron optics to obtain an image of the sample;   electrode to control a charged state of the sample;   a monitor to determine a range of voltage applied to the electrode; and   a processing unit to obtain plural images of the sample under different charged states in which the voltage is changed within the range and to determine an image from the images to inspect the sample by using the image.   
   
   
       15 . An electron beam system according to clam  14 , wherein the image is determined on a basis of a histogram of the voltage contrast of the image. 
   
   
       16 . An electron beam system according to  claim 14 , wherein the range is determined by input of a minimum voltage and a maximum voltage to the monitor.