Critical dimension control during template formation

Abstract

Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer.

1 . A method comprising:
 positioning an imprint lithography mold in superimposition with a substrate to define a volume;   dispensing polymerizable material within the volume;   solidifying the polymerizable material to form a patterned layer having a residual layer and a plurality of features, the features having a critical dimension;   determining a magnitude of thickness of the residual layer and a desired critical dimension for the features;   applying a first etching composition to the patterned layer based on the magnitude of the thickness of the residual layer to alter the critical dimension of the features to the desired critical dimension; and,   applying a second etching composition to the patterned layer to transfer the features into the substrate.   
   
   
       2 . The method of  claim 1 , wherein the first etching composition is a descum etching composition. 
   
   
       3 . The method of  claim 1 , wherein the first etching composition is a polymerizing etching composition. 
   
   
       4 . The method of  claim 1 , where in the first etching composition and the second etching composition are the same. 
   
   
       5 . The method of  claim 1 , further comprising:
 determining a dispense pattern for dispensing polymerizable material within the volume; and,   adjusting the dispense pattern to vary the thickness of the resulting residual layer.   
   
   
       6 . The method of  claim 5 , wherein the thickness of the residual layer is greater at the edges of the substrate than at the center of the substrate. 
   
   
       7 . The method of  claim 5 , wherein the thickness of the residual layer is greater at the center of the substrate than at least one edge of the substrate. 
   
   
       8 . The method of  claim 1 , wherein applying a second etching composition to the patterned layer to transfer the features into the substrate forms a sub-master template. 
   
   
       9 . The method of  claim 1 , wherein the imprint mold is included in a sub-master template and applying a second etching composition to the patterned layer to transfer the features into the substrate forms a working template. 
   
   
       10 . The method of  claim 1 , wherein the imprint mold is included in a master template and applying a second etching composition to the patterned layer to transfer the features into the substrate form a working template. 
   
   
       11 . The method of  claim 1 , wherein the polymerizable material comprises a first polymerizable material and a second polymerizable material, the first polymerizable material having a first erosion rate that is greater than the second polymerizable material. 
   
   
       12 . The method of  claim 1 , wherein the residual layer thickness is proportional to the desired critical dimension. 
   
   
       13 . The method of  claim 12 , wherein the residual layer thickness is inversely proportional to the desired critical dimension. 
   
   
       14 . The method of  claim 12 , wherein the residual layer thickness is directly proportional to the desired critical dimension. 
   
   
       15 . A method comprising:
 positioning an imprint lithography mold and a substrate in superimposition to define a volume therebetween;   dispensing a first polymerizable material on the substrate;   dispensing a second polymerizable material on the substrate, the first polymerizable material having a first erosion rate that is greater than the second polymerizable material;   solidifying the first polymerizable material and the second polymerizable material to form a patterned layer having a residual layer and a plurality of features, wherein a critical dimension of features is substantially uniform.   
   
   
       16 . The method of  claim 15 , further comprising:
 determining a dispense pattern for dispensing polymerizable material within the volume; and,   adjusting the dispense pattern to vary the thickness of the resulting residual layer to be proportional to the critical dimension of features.   
   
   
       17 . A method comprising,
 positioning an imprint lithography mold in superimposition with a substrate to define a volume;   dispensing polymerizable material within the volume;   solidifying the polymerizable material to form a patterned layer having a residual layer and a plurality of features, the features having a critical dimension;   determining a magnitude of thickness of the residual layer; and,   applying a first etching composition to the patterned layer based on the magnitude of the thickness of the residual layer such that the residual layer thickness is proportional to the critical dimension.   
   
   
       18 . The method of  claim 17 , wherein the residual layer thickness is directly proportional to the critical dimension. 
   
   
       19 . The method of  claim 17 , wherein the residual layer thickness is indirectly proportional to the critical dimension. 
   
   
       20 . The method of  claim 17 , further comprising applying a second etching composition to the patterned layer to transfer the features into the substrate.