Method of Forming a Layer of Material Using an Atomic Layer Deposition Process

Abstract

Disclosed is a method of forming a layer of material using an atomic layer deposition (ALD) process in a process chamber of a process tool. In one illustrative embodiment, the method includes identifying a target characteristic for the layer of material, determining a precursor pulse time for introducing a precursor gas into the process chamber during the ALD process to produce the target characteristic in the layer of material, and performing the ALD process that comprises a plurality of steps wherein the precursor gas is introduced into the chamber for the determined precursor pulse time to thereby form the layer of material.

1 . A method of forming a layer of Ru material by performing an atomic layer deposition (ALD) process in a process chamber of a process tool, the method comprising:
 identifying a target characteristic for said layer of Ru material, the target characteristic being selected from the group consisting of crystallinity and resistivity;   determining a precursor pulse time for introducing a precursor gas into said process chamber during said ALD process to produce said target characteristic in said layer of Ru material; and   performing said ALD process that comprises a plurality of steps wherein said precursor gas is introduced into said chamber for said determined precursor pulse time to thereby form said layer of material.   
   
   
       2 . The method of  claim 1 , wherein said layer of material comprises at least one of elemental ruthenium and ruthenium oxide. 
   
   
       3 . The method of  claim 1 , wherein said target characteristic is a resistivity of said layer of material. 
   
   
       4 . The method of  claim 1 , wherein said target characteristic is a crystallinity of said layer of material. 
   
   
       5 . The method of  claim 1 , wherein said target characteristic is substantially uniform throughout a thickness of said layer of material. 
   
   
       6 . The method of  claim 1 , wherein said target characteristic varies within a thickness of said layer of material. 
   
   
       7 . The method of  claim 1 , further comprising establishing a ligand removal environment within said chamber. 
   
   
       8 . The method of  claim 7 , wherein establishing a ligand removal environment in said chamber comprises introducing at least one of ammonia (NH 3 ), hydrogen (H 2 ), nitrogen (N 2 ) and oxygen (O 2 ) into said process chamber to establish said ligand removal environment. 
   
   
       9 . The method of  claim 1 , further comprising generating a plasma within said chamber by applying RF power to a showerhead within said chamber. 
   
   
       10 . A method of forming a layer of Ru material by performing an atomic layer deposition (ALD) process in a process chamber of a process tool, the method comprising:
 identifying a target characteristic for said layer of Ru material, the target characteristic being selected from the group consisting of crystallinity and resistivity;   determining a precursor pulse time for introducing a precursor gas into said process chamber during said ALD process to produce said target characteristic in said layer of Ru material; and   performing an ALD process comprised of a plurality of pulsing patterns to form said layer of Ru material, each of said pulsing patterns comprising:
 evacuating said chamber during a first time period; 
 introducing said precursor gas into said chamber during a second time period that corresponds to said determined precursor pulse time; and 
 evacuating said chamber during a third time period. 
   
   
   
       11 . The method of  claim 10 , wherein said target characteristic is a resistivity of said layer of material. 
   
   
       12 . The method of  claim 10 , wherein said target characteristic is a crystallinity of said layer of material. 
   
   
       13 . The method of  claim 10 , further comprising establishing a ligand removal environment within said chamber. 
   
   
       14 . The method of  claim 10 , further comprising generating a plasma within said chamber by applying RF power to said chamber. 
   
   
       15 . The method of  claim 10 , wherein, during said first, second and third time periods, RF power is not applied to said process chamber. 
   
   
       16 . The method of  claim 10 , wherein said first and third time periods have approximately the same duration. 
   
   
       17 . A method of forming a layer of Ru material by performing an atomic layer deposition (ALD) process in a process chamber of a process tool, the method comprising:
 positioning a substrate within said process chamber;   establishing a ligand removal environment in said chamber; and   performing an ALD process comprised of a plurality of first pulsing patterns to form a first portion of a layer of material above said substrate and a plurality of second pulsing patterns to form a second portion of the layer of material above said substrate, each of said first and second pulsing patterns comprising:   evacuating said chamber during a first time period;   introducing a precursor gas into said chamber during a second time period; and   evacuating said chamber during a third time period;   wherein said second time period during said first plurality of pulsing patterns is different from said second time period during said second plurality of pulsing patterns, and wherein the first portion of the layer of Ru material and the second portion of the layer of Ru material differ in at least one characteristic selected from the group consisting of degree of crystallinity and resistivity.   
   
   
       18 . The method of  claim 17 , wherein establishing a ligand removal environment in said chamber comprises introducing at least one of ammonia (NH 3 ), hydrogen (H 2 ), nitrogen (N 2 ) and oxygen (O 2 ) into said process chamber to establish said ligand removal environment. 
   
   
       19 . The method of  claim 17 , further comprising generating a plasma within said chamber by applying RF power to said chamber. 
   
   
       20 . The method of  claim 17 , wherein, during said first, second and third time periods, RF power is not applied to said process chamber.