Method for producing a semiconductor

Abstract

A method for producing a semiconductor is disclosed. One embodiment provides a p-doped semiconductor body having a first side and a second side. An n-doped zone is formed in the semiconductor body by implantation of protons into the semiconductor body via the first side down to a specific depth of the semiconductor body and by subsequent heating at least of the proton-implanted region of the semiconductor body. A pn junction arises in the semiconductor body. The second side of the semiconductor body is removed at least as far as a space charge zone spanned at the pn junction.

1 . A method for producing a semiconductor, comprising:
 providing a p-doped semiconductor body having a first side and a second side;   forming an n-doped zone in the semiconductor body by implantation of protons into the semiconductor body via the first side down to a specific depth of the semiconductor body and by subsequent heating at least of the proton-implanted region of the semiconductor body, such that a pn junction arises in the semiconductor body; and   removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction.   
   
   
       2 . The method of  claim 1 , comprising effecting the implantation of the protons with an implantation energy lying in the range of between 1 MeV and 8 MeV. 
   
   
       3 . The method of  claim 1 , comprising producing the pn junction at a depth T in the range of 20 μm to 350 μm, measured from a surface of the first side. 
   
   
       4 . The method of  claim 1 , wherein the heating comprises an annealing phase in a temperature range of between 350° C. and 550° C. 
   
   
       5 . The method of  claim 1 , wherein the heating includes an annealing phase in a temperature range of between 450° C. and 520° C. 
   
   
       6 . The method of  claim 4 , comprising wherein the annealing phase has a duration of at least 15 min. 
   
   
       7 . The method of  claim 1 , comprising forming the space charge zone by diffusion of charge carriers across the pn junction. 
   
   
       8 . A method for producing a semiconductor comprising:
 forming the space charge zone by applying a bias voltage across the pn junction   providing a p-doped semiconductor body having a first side and a second side;   forming an n-doped zone in the semiconductor body by implantation of protons into the semiconductor body via the first side down to a specific depth of the semiconductor body and by subsequent heating at least of the proton-implanted region of the semiconductor body, such that a pn junction arises in the semiconductor body; and   removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction.   
   
   
       9 . The method of  claim 8 , comprising setting a width W of the space charge zone by setting a specific bias voltage value across the pn junction. 
   
   
       10 . The method of  claim 8 , comprising polarizing the bias voltage across the pn junction in the forward direction of the pn junction. 
   
   
       11 . The method of  claim 10 , comprising wherein the bias voltage is greater than a diffusion voltage UD of the space charge zone across the pn junction, with the result that the space charge zone is dissolved. 
   
   
       12 . The method of  claim 11 , comprising wherein the removal of the second side ends at the pn junction. 
   
   
       13 . The method of  claim 8 , comprising polarizing the bias voltage across the pn junction in the reverse direction of the pn junction. 
   
   
       14 . The method of  claim 13 , comprising setting the bias voltage value such that the space charge zone extends between 0.5 μm and 5 μm into the p-doped semiconductor body. 
   
   
       15 . The method of  claim 14 , comprising effecting at least a last part of the removal of the second side by electrochemical etching. 
   
   
       16 . A method for producing a semiconductor comprising:
 producing an n-type doping maximum in the n-doped zone   providing a p-doped semiconductor body having a first side and a second side;   forming an n-doped zone in the semiconductor body by implantation of protons into the semiconductor body via the first side down to a specific depth of the semiconductor body and by subsequent heating at least of the proton-implanted region of the semiconductor body, such that a pn junction arises in the semiconductor body; and   removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction.   
   
   
       17 . The method of  claim 16 , comprising producing the n-type doping maximum nearer to the pn junction than to the surface of the first side of the semiconductor body. 
   
   
       18 . The method of  claim 16 , comprising producing the n-type doping maximum by a further proton implantation with subsequent heating. 
   
   
       19 . The method of  claim 18 , comprising effecting the further proton implantation via the first side of the semiconductor body. 
   
   
       20 . The method of  claim 16 , comprising producing a region having a virtually constant n-type doping concentration ND between the n-type doping maximum and the surface of the first side of the semiconductor body in the n-doped zone. 
   
   
       21 . The method of  claim 16 , comprising producing a region having an n-type dopant minimum between the n-type doping maximum and the pn junction in the n-doped zone. 
   
   
       22 . The method of  claim 16 , comprising forming an n-doped shoulder in a region between the n-type doping maximum and the pn junction in the n-doped zone, wherein in the shoulder the n-type doping concentration ND changes by at most a factor of 3 over a length of 1 to 5 μm. 
   
   
       23 . The method of  claim 22 , comprising producing the n-doped zone with a proton irradiation dose of between 1014 cm−2 and 1015 cm−2. 
   
   
       24 . The method of  claim 23 , comprising wherein the semiconductor body is a silicon wafer. 
   
   
       25 . A method comprising:
 producing a power semiconductor component comprising:
 providing a p-doped semiconductor body having a first side and a second side; 
 forming an n-doped zone in the semiconductor body by implantation of protons into the semiconductor body via the first side down to a specific depth of the semiconductor body and by subsequent heating at least of the proton-implanted region of the semiconductor body, such that a pn junction arises in the semiconductor body; and 
 removing the second side of the semiconductor body at least as far as a space charge zone spanned at the pn junction; and 
   fitting at least one electrode the first side and the second side of the semiconductor body.