Method for holding silicon wafer

Abstract

The present invention is directed to provide a method for holding a silicon wafer, which can reduce contact scratches in contact with support members when holding a back surface of the silicon wafer, as well as prevent the wafer from bending when holding the back surface of the silicon wafer. The back surface of a silicon wafer of 300 millimeters or more in diameter and 700 micrometers to 1000 micrometers in thickness is held in contact with a support member or a suction member, specifically held within a region where a radius of the silicon wafer×0.50 to 0.80 from a center thereof. The silicon wafer is held in a state where the maximum amount of displacement within a wafer plane is 300 micrometers or less. The silicon wafer back surface is held in contact within the holding region in all the processes of holding the back surface of the silicon wafer in contact with the support member or the suction member.

1 . A method for holding a silicon wafer, wherein a back surface of a silicon wafer of 300 millimeters or more in diameter and 700 micrometers to 1000 micrometers in thickness is held in contact with a support member or a suction member, specifically held within a region where a radius of the silicon wafer×0.50 to 0.80 from the center thereof. 
     
     
         2 . The method for holding a silicon wafer according to  claim 1 , wherein the silicon wafer is held in a state where the maximum amount of displacement within a wafer plane is 300 micrometers or less. 
     
     
         3 . The method for holding a silicon wafer according to  claim 1 , wherein the silicon wafer back surface is held in contact within the holding region in all the processes of holding the back surface of the silicon wafer in contact with the support member or the suction member. 
     
     
         4 . The method for holding a silicon wafer according to  claim 2 , wherein the silicon wafer back surface is held in contact within the holding region in all the processes of holding the back surface of the silicon wafer in contact with the support member or the suction member.