Controls of ambient environment during wafer drying using proximity head

Abstract

A method for processing a substrate is provided which includes generating a fluid meniscus to process the substrate and applying the fluid meniscus to a surface of the substrate. The method further includes reducing evaporation of fluids from a surface in the substrate processing environment.

1 . A method for processing a substrate, comprising:
 generating a fluid meniscus to process the substrate;   applying the fluid meniscus to a surface of the substrate; and   managing a substrate processing environment so evaporation of fluids from a surface in the substrate processing environment is reduced.   
   
   
       2 . A method for processing a substrate as recited in  claim 1 , wherein managing the substrate processing environment comprises inputting a gas into the substrate processing environment to reduce an evaporation rate of fluids within the substrate processing environment. 
   
   
       3 . A method for processing a substrate as recited in  claim 2 , wherein the gas has a high relative humidity. 
   
   
       4 . A method for processing a substrate as recited in  claim 3 , wherein the gas with the high relative humidity is generated by transmitting gas into a liquid bath and capturing vapor that bubbles up through the liquid bath. 
   
   
       5 . A method for processing a substrate as recited in  claim 3 , wherein the gas with the high relative humidity has a relative humidity between about 50% and about 100%. 
   
   
       6 . A method for processing a substrate as recited in  claim 3 , wherein the gas with the high relative humidity has a relative humidity between about 90% and about 100%. 
   
   
       7 . A method for processing a substrate as recited in  claim 3 , wherein the gas with the high relative humidity has a relative humidity of about 100%. 
   
   
       8 . A method for processing a substrate as recited in  claim 2 , wherein managing the substrate processing environment further comprises detecting fluid thickness on the fluid surface. 
   
   
       9 . A method for processing a substrate as recited in  claim 2 , wherein the gas maintains a concentration of a particular liquid in water. 
   
   
       10 . A method for processing a substrate as recited in  claim 9 , wherein the particular liquid is one of an alcohol, an acetone, and an azeotropic mixture. 
   
   
       11 . A method for processing a substrate as recited in  claim 9 , wherein the particular liquid is isopropyl alcohol (IPA). 
   
   
       12 . A method for processing a substrate as recited in  claim 9 , wherein the gas that maintains a concentration of the particular liquid in water is an N 2  carrier gas containing isopropyl alcohol (IPA) in vapor form. 
   
   
       13 . A method for processing a substrate, comprising:
 generating a fluid meniscus to process the substrate;   applying the fluid meniscus to a surface of the substrate; and   reducing evaporation of fluids from a surface in the substrate processing environment.   
   
   
       14 . A method for processing a substrate as recited in  claim 13 , wherein reducing evaporation of fluids includes managing a substrate processing environment by inputting a high relative humidity gas into the substrate processing environment. 
   
   
       15 . A method for processing a substrate as recited in  claim 14 , wherein the gas with the high relative humidity is generated by transmitting gas into a liquid bath and capturing vapor that bubbles up through the liquid bath. 
   
   
       16 . A method for processing a substrate as recited in  claim 14 , wherein the gas with the high relative humidity has a relative humidity between about 50% and about 100%. 
   
   
       17 . A method for processing a substrate as recited in  claim 14 , wherein the gas with the high relative humidity has a relative humidity between about 90% and about 100%. 
   
   
       18 . A method for processing a substrate as recited in  claim 14 , wherein the gas with the high relative humidity has a relative humidity of about 100%.