Single wafer dryer and drying methods

Abstract

In a first aspect, a module is provided that is adapted to process a wafer. The module includes a processing portion having one or more features such as (1) a rotatable wafer support for rotating an input wafer from a first orientation wherein the wafer is in line with a load port to a second orientation wherein the wafer is in line with an unload port; (2) a catcher adapted to contact and travel passively with a wafer as it is unloaded from the processing portion; (3) an enclosed output portion adapted to create a laminar air flow from one side thereof to the other; (4) an output portion having a plurality of wafer receivers; (5) submerged fluid nozzles; and/or (6) drying gas flow deflectors, etc. Other aspects include methods of wafer processing.

1 . A method of rinsing a microelectronic device comprising:
 immersing at least a portion of a surface of the microelectronic device within an immersion vessel containing a liquid bath;   separating the microelectronic device from the liquid bath into a gas environment and, during such separation, forming a meniscus at an interface between the surface of the microelectronic device and the liquid bath; and   delivering a cleaning enhancement substance into the gas environment and specifically directed to the meniscus that is formed while the microelectronic device is separated from the liquid bath, the delivery of cleaning enhancement substance being conducted as a series of gas streams formed by a nozzle with a series of delivery orifices arranged along the direction of extension of the meniscus along the surface of the microelectronic device so that a gradient in the surface tension of the liquid at the meniscus is created.   
   
   
       2 . The method of  claim 1 , wherein the delivery step further comprises delivering cleaning enhancement substance to menisci that are formed at a plurality of surfaces of the microelectronic device. 
   
   
       3 . The method of  claim 1 , wherein portions of a plurality of microelectronic devices are immersed within a liquid bath at the same time and at least one surface of each microelectronic device is separated from the liquid bath so that a meniscus is formed at that surface and wherein the delivery step further comprises delivering cleaning enhancement substance to a meniscus formed at that surface. 
   
   
       4 . The method of  claim 3 , wherein the plurality of microelectronic devices are immersed together within an immersion vessel. 
   
   
       5 . The method of  claim 4 , wherein the cleaning enhancement substance is delivered to menisci that are formed at plural surfaces of a plurality of microelectronic devices. 
   
   
       6 . The method of  claim 3 , wherein the plurality of microelectronic devices are immersed at the same time, but within liquid baths provided within separate immersion vessels. 
   
   
       7 . The method of  claim 6 , wherein the cleaning enhancement substance is delivered to menisci that are formed at plural surfaces of a plurality of microelectronic devices. 
   
   
       8 . The method of  claim 3 , wherein the cleaning enhancement substance is delivered as a series of gas streams arranged along the direction of extension of the menisci formed at oppositely facing surfaces of a plurality of the microelectronic devices while cleaning enhancement substance is also delivered to the gas environment. 
   
   
       9 . A method of rinsing microelectronic devices comprising:
 immersing a plurality of microelectronic devices within an immersion vessel containing a liquid bath; separating the microelectronic devices from the liquid bath into a gas environment and, during such separation, forming menisci at interfaces between the surfaces of the microelectronic devices and the liquid bath; and   delivering cleaning enhancement substance into the gas environment and specifically directed to menisci formed at surfaces of a plurality of microelectronic devices, wherein the cleaning enhancement substance is delivered to menisci by supplying gas flow from nozzles arranged in the direction of extension of the menisci formed at opposite surfaces of a plurality of the microelectronic devices while the cleaning enhancement substance is also delivered by another dispensing nozzle to the gas environment.   
   
   
       10 . The method of  claim 9 , wherein the cleaning enhancement substance is delivered by an elongate nozzle having a series of delivery orifices. 
   
   
       11 . The method of  claim 9 , wherein the plurality of microelectronic devices are immersed together within an immersion vessel. 
   
   
       12 . The method of  claim 11 , wherein the cleaning enhancement substance is delivered to menisci that are formed at plural surfaces of a plurality of microelectronic devices. 
   
   
       13 . The method of  claim 9 , wherein the plurality of microelectronic devices are immersed at the same time, but within liquid baths provided within separate immersion vessels. 
   
   
       14 . The method of  claim 13 , wherein the cleaning enhancement substance is delivered to menisci that are formed at plural surfaces of a plurality of microelectronic devices.