Reticle Stages for Lithography Systems and Lithography Methods

Abstract

Reticle stages for lithography systems and lithography methods are disclosed. In a preferred embodiment, a lithography reticle stage includes a first region adapted to support a first reticle, and at least one second region adapted to support a second reticle.

1 . A lithography system, comprising:
 a base structure;   a reticle stage supported by said base structure such that said reticle stage can rotate with respect to said base structure;   a first region for supporting a first reticle; and   at least one second region for supporting a second reticle.   
   
   
       2 . The lithography system according to  claim 1 , wherein the first reticle and the second reticle comprise binary lithography masks or alternating phase shifting masks. 
   
   
       3 . The lithography system according to  claim 1 , further comprising a third region for supporting a third reticle. 
   
   
       4 . The lithography system according to  claim 1 , further comprising a means for aligning the first reticle and the second reticle. 
   
   
       5 . The lithography system according to  claim 1 , wherein the lithography system comprises an optical lithography system, a non-optical lithography system, an x-ray lithography system, an interference lithography system, a short wavelength lithography system, a Scattering with Angular Limitation in Projection Electron-beam Lithography (SCALPEL) system, an immersion lithography system, or an ultraviolet (UV) or extreme UV (EUV) light lithography system. 
   
   
       6 . The lithography reticle stage according to  claim 1 , wherein the lithography reticle stage is adapted to be used in a lithography system for patterning a material layer of a semiconductor device. 
   
   
       7 . The lithography reticle stage according to  claim 1 , wherein the first region comprises a first aperture, and wherein the at least one second region comprises at least one second aperture proximate the first aperture. 
   
   
       8 . The lithography reticle stage according to  claim 7 , further comprising at least one first lip, first contact point, first transparent material, and/or first lateral retainment mechanism disposed proximate the first aperture, and at least one second lip, second contact point, second transparent material, and/or second lateral retainment mechanism disposed proximate the at least one second aperture, wherein the at least one first lip, first contact point, first transparent material, and/or first lateral retainment mechanism is adapted to retain the first reticle within the first aperture of the support member, and wherein the at least one second lip, second contact point, second transparent material, and/or second lateral retainment mechanism is adapted to retain the second reticle within the at least one second aperture of the support member. 
   
   
       9 . The lithography reticle stage according to  claim 1 , wherein the second reticle is different than the first reticle. 
   
   
       10 . The lithography system of  claim 1  further comprising:
 a wafer stage;   an energy source;   a lens system disposed between the wafer stage and the energy source; and   said reticle stage is disposed between the energy source and the lens system and wherein the second reticle is different than the first reticle.   
   
   
       11 . The lithography system of  claim 10  further comprising:
 a means for aligning the first reticle and the second reticle.   
   
   
       12 . A method of forming a semiconductor device, the method comprising:
 forming a material layer to be patterned over a workpiece and a photosensitive material layer over the material layer;   rotating a reticle stage supporting a first and a second lithography mask to align the first lithography mask over a first region of the photosensitive material layer and the material layer;   exposing the first region of the photosensitive material layer through the first lithography mask;   after exposing the first region, rotating the reticle stage to align the second lithography mask over a second region of the photosensitive material layer and the material layer; and   exposing the second region of the photosensitive material layer through the second lithography mask.   
   
   
       13 . The method according to  claim 12 , further comprising developing the first and the second regions after exposing the second region. 
   
   
       14 . The method according to  claim 13 , further comprising patterning the material layer using the photo sensitive layer patterned with the first and the second lithography masks as a mask. 
   
   
       15 . The method according to  claim 14 , wherein patterning the material layer comprises patterning a minimum feature size of the semiconductor device. 
   
   
       16 . The method according to  claim 13 , wherein developing the first and the second regions comprises:
 forming a first feature in the first region, the first feature having a first width in a first direction and a first length in a second direction, the first length being greater than the first width; and   forming a second feature in the second region, the second feature having a second length in the first direction and a second width in the second direction, the second length being greater than the second width.   
   
   
       17 . The method according to  claim 16 , wherein the first length is substantially the same as the second length, and wherein the first width is substantially the same as the second width. 
   
   
       18 . The method according to  claim 12 , wherein the reticle support includes a retainment means for supporting the first lithography mask or the second lithography mask. 
   
   
       19 . The method according to  claim 12 , wherein the material layer comprises a conductive material, an insulating material, a semiconductive material, or multiple layers or combinations thereof. 
   
   
       20 . The method according to  claim 12 , wherein the first lithography mask patterns features in a first direction, and wherein the second lithography mask patterns features in a second direction orthogonal to the first direction. 
   
   
       21 . A method of forming a semiconductor device, the method comprising:
 forming a material layer to be patterned over a workpiece and a photosensitive material layer over the material layer;   rotating a reticle stage supporting a first and a second lithography mask to align the first lithography mask over a first region of the photosensitive material layer and the material layer;   exposing a region of the photosensitive material layer through the first lithography mask;   after exposing the region, rotating the reticle stage to align the second lithography mask over the region of the photosensitive material layer and the material layer; and   exposing the region of the photosensitive material layer through the second lithography mask.   
   
   
       22 . The method according to  claim 21 , further comprising developing the photosensitive material layer. 
   
   
       23 . The method according to  claim 22 , further comprising patterning the material layer using the photo sensitive layer patterned with the first and the second lithography masks as a mask. 
   
   
       24 . The method according to  claim 22 , wherein the first lithography mask is configured to form first minimum features having a first critical dimension, wherein the second lithography mask is configured to form second minimum features having a second critical dimension, and wherein developing the photosensitive material layer forms third minimum features having a third critical dimension smaller than the first and the second critical dimension. 
   
   
       25 . The method according to  claim 21 , wherein the reticle support includes a retainment means for supporting the first lithography mask or the second lithography mask. 
   
   
       26 . The method according to  claim 21 , wherein the material layer comprises a conductive material, an insulating material, a semiconductive material, or multiple layers or combinations thereof. 
   
   
       27 . The method according to  claim 21 , wherein the first lithography mask patterns features in a first direction, wherein the second lithography mask patterns features in a second direction orthogonal to the first direction.