Composition for copper plating and associated methods
Abstract
A composition for copper plating and associated methods, a method of forming a copper wiring including forming an insulation layer having a recessed portion on a substrate, and forming a copper layer on the insulation layer to fill the recessed portion by performing an electroplating process using a composition that includes an aqueous electrolyte solution containing a copper ion and at least one of a disulfide compound represented by Formula 1, a betaine compound represented by at least one of Formulae 3 and 4, and a triblock copolymer of polyethylene oxide-polypropylene oxide-polyethylene oxide (PEO-PPO-PEO) having a weight average molecular weight of about 2,500 to about 5,000 g/mol and an ethylene oxide content (EO %, w/w) of about 30% to about 60%.
Claims
exact text as granted — not AI-modified1 . A method of forming a copper wiring, the method comprising:
forming an insulation layer having a recessed portion on a substrate; and forming a copper layer on the insulation layer to fill the recessed portion by performing an electroplating process using a composition that includes an aqueous electrolyte solution containing a copper ion and at least one of a disulfide compound represented by Formula 1, a betaine compound represented by at least one of Formulae 3 and 4, and a triblock copolymer of polyethylene oxide-polypropylene oxide-polyethylene oxide (PEO-PPO-PEO),
wherein:
in Formula 1, R 1 and R 3 are each independently substituted or unsubstituted C 1 -C 10 alkyl, cycloalkyl, aromatic hydrocarbon, or alkylsilyl, R 2 and R 4 are each independently hydrogen, C 1 -C 10 alkyl, cycloalkyl, aromatic hydrocarbon, or alkylsilyl, Rm and Rn are each independently a C 1 -C 10 alkylene chain, a C 3 -C 10 cycloalkylene chain, or a C 4 -C 10 aromatic hydrocarbon chain, and M 1 + and M 2 + are each independently a hydrogen ion, an alkali metal ion, or an ammonium ion,
in Formulae 3 and 4, R 7 and R 10 are each independently C 1 -C 20 alkyl, cycloalkyl or aromatic hydrocarbon, R 8 , R 9 , R 11 , and R 12 are each independently C 1 -C 4 alkyl, and n is an integer of 1 to about 10, and
the triblock copolymer of PEO-PPO-PEO has a weight average molecular weight of about 2,500 to about 5,000 g/mol and an ethylene oxide content (EO %, w/w) of about 30% to about 60%.
2 . The method as claimed in claim 1 , wherein:
the composition includes the disulfide compound represented by Formula 1, and the disulfide compound is a compound represented by Formula 2,
wherein R 5 and R 6 are each independently methyl, ethyl, propyl, isopropyl, n-butyl, sec-butyl, tert-butyl or trialkylsilyl, and M 1 + and M 2 + are each independently a hydrogen ion, an alkali metal ion, or an ammonium ion.
3 . The method as claimed in claim 1 , wherein:
the composition includes the PEO-PPO-PEO triblock copolymer, and the PEO-PPO-PEO triblock copolymer has a weight average molecular weight of about 2,500 to about 3,500 g/mol.
4 . The method as claimed in claim 1 , wherein:
the composition includes the betaine compound represented by at least one of Formulae 3 and 4, and in Formulae 3 and 4, R 7 and R 10 are each independently C 6 -C 20 alkyl.
5 . The method as claimed in claim 1 , wherein:
the composition includes the betaine compound represented by at least one of Formulae 3 and 4, and the betaine compound represented by at least one of Formulae 3 and 4 includes at least one of lauryl dimethyl betaine and lauramidopropyl dimethyl betaine.
6 . The method as claimed in claim 1 , further comprising forming a diffusion barrier layer on the insulation layer having the recessed portion.
7 . The method as claimed in claim 1 , further comprising forming a seed layer on the diffusion barrier layer, wherein the copper layer is formed on the seed layer to fill the recessed portion.
8 . The method as claimed in claim 1 , wherein the aqueous electrolyte solution further includes a halide ion.
9 . A method of forming a copper wiring, the method comprising:
forming a first insulation layer on the substrate having a conductive structure, the first insulation layer including a first opening exposing the conductive structure; forming a second insulation layer on the first insulation layer, the second insulation layer including a second opening exposing the first opening; forming a diffusion barrier layer along the first opening and the second opening; forming a seed layer on the diffusion barrier layer; forming a copper layer on the seed layer to fill the first opening and the second opening by performing an electroplating process using a composition that includes an aqueous electrolyte solution containing a copper ion and at least one of a disulfide compound represented by Formula 1, a betaine compound represented by at least one of Formulae 3 and 4, and a triblock copolymer of polyethylene oxide-polypropylene oxide-polyethylene oxide (PEO-PPO-PEO),
wherein:
in Formula 1, R 1 and R 3 are each independently substituted or unsubstituted C 1 -C 10 alkyl, cycloalkyl, aromatic hydrocarbon, or alkylsilyl, R 2 and R 4 are each independently hydrogen, C 1 -C 10 alkyl, cycloalkyl, aromatic hydrocarbon, or alkylsilyl, Rm and Rn are each independently a C 1 -C 10 alkylene chain, a C 3 -C 10 cycloalkylene chain, or a C 4 -C 10 aromatic hydrocarbon chain, and M 1 + and M 2 + are each independently a hydrogen ion, an alkali metal ion, or an ammonium ion,
in Formulae 3 and 4, R 7 and R 10 are each independently C 1 -C 20 alkyl, cycloalkyl or aromatic hydrocarbon, R 8 , R 9 , R 11 , and R 12 are each independently C 1 -C 4 alkyl, and n is an integer of 1 to about 10, and
the triblock copolymer of PEO-PPO-PEO has a weight average molecular weight of about 2,500 to about 5,000 g/mol and an ethylene oxide content (EO %, w/w) of about 30% to about 60%.
10 . The method as claimed in claim 9 , wherein the first opening has a hole shape and the second opening has a trench shape.
11 . The method as claimed in claim 9 , wherein the conductive structure is a portion of the substrate doped with impurities.
12 . The method as claimed in claim 9 , wherein the conductive structure is one of a pad or a conductive line formed on the substrate.
13 . The method as claimed in claim 9 , wherein the composition includes the disulfide compound represented by Formula 1.
14 . The method as claimed in claim 9 , wherein the aqueous electrolyte solution further includes a halide ion.
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