Method of manufacturing semiconductor device

Abstract

A method of manufacturing a semiconductor device, the method including forming a photoresist film on a substrate, and removing the photoresist film from the substrate using a composition that includes a sulfuric acid solution, a hydrogen peroxide solution, and a corrosion inhibitor.

1 . A method of manufacturing a semiconductor device, the method comprising:
 forming a photoresist film on a substrate; and   removing the photoresist film from the substrate using a composition that includes:
 a sulfuric acid solution, 
 a hydrogen peroxide solution, and 
 a corrosion inhibitor. 
   
     
     
         2 . The method as claimed in  claim 1 , wherein the substrate includes a metal containing film, and the metal containing film is exposed to the composition during the removing of the photoresist film. 
     
     
         3 . The method as claimed in  claim 2 , wherein the metal containing film includes at least one of tungsten, tungsten nitride, tungsten silicide, tantalum nitride, titanium nitride, tantalum, molybdenum, copper, gold, silver, ruthenium, platinum, rhodium, iridium, osmium, palladium, platinum oxide, rhodium oxide, ruthenium oxide, iridium oxide, osmium oxide, palladium oxide, calcium ruthenium oxide, strontium ruthenium oxide, barium ruthenium oxide, barium strontium ruthenium oxide, calcium iridium oxide, strontium iridium oxide, barium iridium oxide, (lanthanum, strontium) cobalt oxide, molybdenum silicide, tantalum silicide, zirconium silicon nitride, zirconium aluminum nitride, molybdenum silicon nitride, molybdenum aluminum nitride, tantalum silicon nitride, or tantalum aluminum nitride. 
     
     
         4 . The method as claimed in  claim 2 , further comprising etching the metal containing film using the photoresist film as an etching mask, prior to removing of the photoresist film. 
     
     
         5 . The method as claimed in  claim 1 , wherein the sulfuric acid solution is a 96% sulfuric acid solution, the hydrogen peroxide solution is a 30% hydrogen peroxide solution, and the 30% hydrogen peroxide solution is included in an amount of about 3 to 10 weight % based on the total weight of the composition. 
     
     
         6 . The method as claimed in  claim 1 , wherein the corrosion inhibitor includes an ammonium salt compound. 
     
     
         7 . The method as claimed in  claim 6 , wherein the ammonium salt compound includes at least one of ammonium thiosulfate, ammonium sulfate, ammonium persulfate, ammonium phosphate, ammonium sulfate, ammonium nitrate, ammonium borate, ammonium citrate, ammonium oxalate, ammonium formate, and ammonium carbonate. 
     
     
         8 . The method as claimed in  claim 1 , wherein the composition further includes a strip enhancer. 
     
     
         9 . The method as claimed in  claim 8 , wherein the strip enhancer includes a fluoric compound. 
     
     
         10 . The method as claimed in  claim 9 , wherein the fluoric compound includes at least one of ammonium fluoride, ammonium hydrofluoride, ammonium borofluoride, fluoroboric acid, and hydrogen fluoride. 
     
     
         11 . The method as claimed in  claim 1 , further comprising implanting impurity ions in the substrate having the photoresist film thereon by using the photoresist film as an ion implantation mask, prior to removing the photoresist film.