Carbon materials for carbon implantation

Abstract

A method of implanting carbon ions into a target substrate, including: ionizing a carbon containing dopant material to produce a plasma having ions; optionally co-flowing an additional gas or series of gases with the carbon-containing dopant material; and implanting the ions into the target substrate. The carbon-containing dopant material is of the formula C w F x O y H z wherein if w=1, then x>0 and y and z can take any value, and wherein if w>1 then x or y is >0, and z can take any value. Such method significantly improves the efficiency of an ion implanter tool, in relation to the use of carbon source gases such as carbon monoxide or carbon dioxide.

1 . A method of implanting a carbon ion into a target substrate, comprising:
 ionizing a carbon-containing dopant material to produce a plasma having ions; and   implanting the ions into the target substrate;   wherein the carbon-containing dopant material is of the formula C w F x O y H z  wherein if w=1, then x>0 and y and z can take any value, and wherein if w>1 then x or y is >0, and z can take any value.   
     
     
         2 . The method of  claim 1 , wherein the ions of the plasma produced are of the form C a F b O c H d   + , wherein a>0, and b, c, and d can have any value. 
     
     
         3 . The method of  claim 1 , wherein upon ionizing the carbon-containing dopant material, the carbon ions are clustered in groups of at least two carbon atoms. 
     
     
         4 . The method of  claim 1 , wherein the carbon-containing dopant material is COF 2 . 
     
     
         5 . The method of  claim 1 , further comprising selecting the ratios of w, x, y, and z to produce a feed material of the formula C w F x O y H z  prior to the step of ionizing to produce the plasma. 
     
     
         6 . The method of  claim 1 , further comprising co-flowing an additional gas or series of gases with the carbon-containing dopant material, the additional gas comprising one or more of carbon, oxygen, fluorine, hydrogen, nitrogen, argon, xenon, air, and helium. 
     
     
         7 . A method of implanting carbon ions into a target substrate, comprising:
 ionizing a carbon-containing dopant material to produce a plasma having ions;   co-flowing an additional gas or series of gases with the carbon-containing dopant material; and   implanting the ions into the target substrate;   wherein the carbon-containing dopant material is of the formula C w F x O y H z .   
     
     
         8 . The method of  claim 7 , wherein the ions of the plasma produced are of the form C a F b O c H d   + , wherein a>0, and b, c, and d can have any value. 
     
     
         9 . The method of  claim 7 , wherein upon ionizing the carbon-containing dopant material, the carbon ions are clustered in groups of at least two carbon atoms. 
     
     
         10 . The method of  claim 7 , wherein the carbon-containing dopant material is COF 2  gas. 
     
     
         11 . The method of  claim 7 , further comprising selecting the desired additional gas or series of gases and desired ratios of w, x, y, and z to produce a feed material of the formula CC w F x O y H z , prior to the step of ionizing to produce the plasma. 
     
     
         12 . The method of  claim 7 , wherein the additional gas comprises one or more of carbon, oxygen, fluorine, hydrogen, nitrogen, argon, xenon, air, and helium. 
     
     
         13 . A method of improving the efficiency of an ion implanter tool, comprising:
 selecting a carbon-containing dopant material of the formula C w F x O y H z  for use in the ion implanter tool in a chamber, wherein if w=1, then x>0 and y and z can take any value, and wherein if w>1 then x or y is >0, and z can take any value;   ionizing the carbon-containing dopant material; and   implanting a carbon ion from the ionized carbon-containing dopant material using the ion implanter tool;   wherein the selecting of the material of the formula C w F x O y H z  minimizes the amount of carbon and/or non-carbon elements deposited in the chamber after the implanting of the carbon ion.   
     
     
         14 . The method of  claim 13 , wherein the carbon-containing dopant material is COF 2 . 
     
     
         15 . The method of  claim 13 , further comprising providing an additional material with the carbon-containing dopant material. 
     
     
         16 . The method of  claim 13 , wherein the ions of the plasma produced are of the form C a F b O c H d   + , wherein a>0, and b, c, and d can have any value.