Lid assembly for a processing system to facilitate sequential deposition techniques

Abstract

Embodiments of the invention generally relate to apparatuses for processing substrates. In one embodiment, a substrate processing system for sequential deposition or atomic layer deposition (ALD) is provided and includes a lid assembly coupled with a chamber housing, wherein the lid assembly contains a lid having a plurality of controllable flow channels extending from an upper lid surface, through the lid, and to a lower lid surface, a gas manifold disposed on the lid, and at least one valve coupled with the gas manifold and adapted to control a gas flow through one of the controllable flow channels. The substrate processing system further contains a gas reservoir disposed between a first gas line and a second gas line, and the gas reservoir is fluidly connected to the gas manifold by the second gas line.

1 . A substrate processing system for sequential deposition, comprising:
 a lid assembly coupled with a chamber housing, wherein the lid assembly comprises a lid having an upper lid surface opposed to a lower lid surface and a plurality of controllable flow channels extending from the upper lid surface, through the lid, and to the lower lid surface;   a gas manifold disposed on the lid;   at least one valve coupled with the gas manifold and adapted to control a gas flow through one of the controllable flow channels, wherein the at least one valve is configured to provide an open and close cycle having a time period of less than about 1 second during a gas delivery cycle for enabling an atomic layer deposition process; and   a gas reservoir disposed between a first gas line and a second gas line, and the gas reservoir is fluidly connected to the gas manifold by the second gas line.   
     
     
         2 . The substrate processing system of  claim 1 , further comprising a precursor source fluidly connected to the gas reservoir by the first gas line. 
     
     
         3 . The substrate processing system of  claim 2 , further comprising a first connector coupled with the first gas line and disposed between the gas reservoir and the precursor source. 
     
     
         4 . The substrate processing system of  claim 3 , further comprising a second connector coupled with the second gas line and disposed between the gas reservoir and the gas manifold. 
     
     
         5 . The substrate processing system of  claim 1 , further comprising a second gas reservoir disposed between two additional gas lines, and one of the two additional gas lines is fluidly connected to the gas manifold. 
     
     
         6 . The substrate processing system of  claim 5 , wherein the second gas reservoir is fluidly connected between the gas manifold and a second precursor source by the other gas line of the two additional gas lines. 
     
     
         7 . The substrate processing system of  claim 1 , wherein the gas reservoir has about 5 times the volume than required in each gas delivery cycle. 
     
     
         8 . The substrate processing system of  claim 1 , further comprising a remote plasma source coupled with the gas manifold. 
     
     
         9 . The substrate processing system of  claim 1 , wherein the lid assembly is pivotally coupled with the chamber housing. 
     
     
         10 . The substrate processing system of  claim 1 , wherein the gas manifold comprises:
 an upper manifold surface and a lower manifold surface; and   a first channel and a second channel each extending from the upper manifold surface, through the gas manifold, and to the lower manifold surface.   
     
     
         11 . The substrate processing system of  claim 1 , wherein the gas manifold further comprises a conduit disposed therein and adapted to flow a heat transfer fluid therethrough. 
     
     
         12 . The substrate processing system of  claim 1 , wherein the at least one valve is configured to provide the open and close cycle at a time period of less than about 0.1 seconds. 
     
     
         13 . The substrate processing system of  claim 1 , further comprising a second valve coupled with the gas manifold and adapted to control a second gas flow through one of the controllable flow channels for a time period of less than about 1 second. 
     
     
         14 . A substrate processing system for sequential deposition, comprising:
 a lid assembly coupled with a chamber housing, wherein the lid assembly comprises a lid having an upper lid surface opposed to a lower lid surface and a first controllable flow channel and a second controllable flow channel each extending from the upper lid surface, through the lid, and to the lower lid surface;   a gas manifold disposed on the upper lid surface, wherein the gas manifold comprises an upper manifold surface opposed to a lower manifold surface and a first manifold channel and a second manifold channel each extending from the upper manifold surface, through the gas manifold, and to the lower manifold surface;   a first valve coupled with the gas manifold and adapted to control a first gas flow through the first controllable flow channel, a second valve coupled with the gas manifold and adapted to control a second gas flow through the second controllable flow channel, wherein each of the first and second valves is configured to independently provide an open and close cycle having a time period of less than about 1 second; and   a first gas reservoir disposed between an upstream gas line and a downstream gas line, and the downstream gas line is fluidly connected with the first manifold channel and the first controllable flow channel.   
     
     
         15 . The substrate processing system of  claim 14 , further comprising a precursor source fluidly connected to the upstream gas line of the first gas reservoir. 
     
     
         16 . The substrate processing system of  claim 15 , further comprising a connector coupled with the upstream gas line and disposed between the first gas reservoir and the precursor source. 
     
     
         17 . The substrate processing system of  claim 14 , further comprising a second gas reservoir disposed between two additional gas lines, and one of the two additional gas lines is fluidly connected with the second manifold channel and the second controllable flow channel. 
     
     
         18 . The substrate processing system of  claim 14 , further comprising a remote plasma source coupled with the gas manifold. 
     
     
         19 . A substrate processing system for sequential deposition, comprising:
 a lid assembly coupled with a chamber housing, wherein the lid assembly comprises a lid having an upper lid surface opposed to a lower lid surface and a first controllable flow channel, a second controllable flow channel, and a third controllable flow channel each extending from the upper lid surface, through the lid, and to the lower lid surface;   a gas manifold disposed on the upper lid surface, wherein the gas manifold comprises an upper manifold surface opposed to a lower manifold surface and a first channel, a second channel, and a third channel each extending from the upper manifold surface, through the gas manifold, and to the lower manifold surface;   a first valve coupled with the gas manifold and adapted to control a first gas flow through the second controllable flow channel, a second valve coupled with the gas manifold and adapted to control a second gas flow through the second controllable flow channel, wherein each of the first and second valves is independently configured to provide an open and close cycle having a time period of less than about 1 second; and   a gas reservoir fluidly connected between the gas manifold and a precursor source.   
     
     
         20 . The substrate processing system of  claim 19 , further comprising a remote plasma source coupled with the gas manifold.