Semiconductor Wafer and Method of Manufacturing the Same and Method of Manufacturing Semiconductor Device

Abstract

A semiconductor wafer comprising: a tubular trench formed at a position to form a through-hole electrode of a wafer; an insulating member buried inside the trench and on an upper surface of the trench; a gate electrode film and a metal film formed on an upper surface of the insulating member; a multilevel columnar wiring via formed on an upper surface of the metal film; and an external connection electrode formed electrically connected to the metal film via the multilevel columnar wiring via. In this manner, it is unnecessary to have a new process of dry etching to form a through-hole electrode after thinning the wafer and equipment development. Moreover, introduction of a specific design enables formation of through-hole electrodes with significantly reduced difficulties of respective processes.

1 - 6 . (canceled) 
     
     
         7 . A semiconductor device in which a through-hole electrode of a first wafer and a through-hole electrode in a second wafer are electrically connected to each other, wherein
 the through-hole electrode of the first wafer includes:
 a hollow tubular trench formed in the first wafer formed in the first wafer; 
 an insulating member buried inside the trench and on an upper surface of the first wafer surrounded by the trench; and 
 a conducting film formed on an upper surface of the insulating member, 
   the through-hole electrode of the second wafer includes:
 a hollow tubular trench formed in the second wafer; 
 an insulating member buried inside the trench and on an upper surface of the second wafer surrounded by the trench; 
 a conducting film formed on an upper surface of the insulating member; and 
 an external connection electrode formed on an upper surface of the conducting film, and 
   the through-hole electrode of the first wafer and the through-hole electrode of the second wafer are electrically connected to each other via a bump formed on an upper surface of the external connection electrode.   
     
     
         8 . The semiconductor device according to  claim 7 , wherein
 the conducting film and the external connection electrode are electrically connected to each other via a conducting member.   
     
     
         9 . The semiconductor device according to  claim 8 , wherein
 the conducting member includes a multilevel columnar wiring via.   
     
     
         10 . The semiconductor device according to  claim 7 , wherein
 the through-hole electrode of the first wafer and the through-hole electrode of the second wafer are electrically connected to each other by mechanically caulking the bump.   
     
     
         11 . The semiconductor device according to  claim 10 , wherein
 the bump is pressed into an inside of the through-hole electrode of the first wafer to mechanically caulk the bump.   
     
     
         12 . The semiconductor device according to  claim 7 , wherein
 the first wafer includes a bump on a surface opposite to the through-hole electrode of the first wafer.   
     
     
         13 . The semiconductor device according to  claim 7 , wherein
 the through-hole electrode of the second wafer is formed by the steps of:   forming the hollow tubular trench at a position to form the through-hole electrode of the second wafer;   burying the insulating member inside the trench and on the upper surface of the second wafer surrounded by the trench;   forming a conducting film on an upper surface of the insulating member; and   forming the external connection electrode on the upper surface of the conducting film.   
     
     
         14 . The semiconductor device according to  claim 13 , wherein
 the conducting film and the external connection electrode are electrically connected to each other via the conducting member by the steps of:   forming the conducting member on the upper surface of the conducting film; and   forming the external connection electrode electrically connected to the conducting film via the conducting member.   
     
     
         15 . The semiconductor device according to  claim 14 , manufactured by the steps of:
 forming a plurality of conducting films in a semiconductor manufacturing process in the step of forming the conducting film, and   forming a multilevel columnar wiring via in a process of forming multilayer wirings and an interlayer insulating film in the semiconductor manufacturing process in the step of forming the conducting member.   
     
     
         16 . The semiconductor device according to  claim 7 , manufactured by the steps of:
 thinning the second wafer from its back surface so that the insulating member buried inside the trench is exposed;   dissolving the insulating member inside the trench and on the upper surface of the trench by wet etching; and   forming a silicon hole part by dropping a silicon piece of an inner surface of the trench.   
     
     
         17 . The semiconductor device according to  claim 7 , manufactured by the steps of:
 forming the hollow tubular trench at a position to form the through-hole electrode of the second wafer;   burying the insulating member inside the trench and on the upper surface of the second wafer surrounded by the trench;   forming a conducting film on an upper surface of the insulating member;   forming the external connection electrode on the upper surface of the conducting film;   thinning the second wafer from its back surface so that the insulating member buried inside the trench is exposed;   dissolving the insulating member inside the trench and on the upper surface of the trench by wet etching; and   forming a silicon hole part by dropping a silicon piece of an inner surface of the trench.