Film formation method and storage medium

Abstract

A film formation method includes preparing a substrate formed a Co film as a seed layer on a surface of the substrate, applying a negative voltage to the substrate such that a surface potential of Co is lower than an oxidation potential of the Co, and in a state when the negative voltage is applied to the substrate, dipping the Co film in a plating solution mainly containing copper sulfate solution, thereby a Cu film is formed on the Co film of the substrate by electroplating.

1 . A film formation method comprising:
 preparing a substrate formed a Co film as a seed layer on a surface of the substrate;   applying a negative voltage to the substrate such that a surface potential of Co is lower than an oxidation potential of the Co; and   in a state when the negative voltage is applied to the substrate, dipping the Co film in a plating solution mainly containing copper sulfate solution, thereby a Cu film is formed on the Co film of the substrate by electroplating.   
     
     
         2 . The film formation method of  claim 1 , wherein the Co film is formed by CVD. 
     
     
         3 . The film formation method of  claim 1 , wherein a thickness of the Co film ranges from 1.5 to 5 nm. 
     
     
         4 . The film formation method of  claim 1 , wherein a voltage is applied before the substrate is dipped in the plating solution such that a potential difference between the substrate and the plating solution is equal to or greater than 0.3 V at a time when the Co film on the surface of the substrate is dipped in the plating solution. 
     
     
         5 . A film formation method comprising:
 forming a Co film to become a seed layer on a substrate by CVD;   applying a negative voltage to the substrate such that a surface potential of Co is lower than an oxidation potential of the Co; and   in a state when the negative voltage is applied to the substrate, dipping the Co film in a plating solution mainly containing copper sulfate solution, thereby a Cu film is formed on the Co film of the substrate by electroplating.   
     
     
         6 . The film formation method of  claim 5 , wherein a thickness of the Co film ranges from 1.5 to 5 nm. 
     
     
         7 . The film formation method of  claim 5 , wherein a voltage is applied before the substrate is dipped in the plating solution such that a potential difference between the substrate and the plating solution is equal to or greater than 0.3 V at a time when the Co film on the surface of the substrate is dipped in the plating solution. 
     
     
         8 . A storage medium operating on a computer, having stored thereon a program for controlling a film formation apparatus and controlling the film formation apparatus on the computer, wherein the program performs, when the program is executed, a film formation method comprising preparing a substrate formed a Co film as a seed layer on a surface of the substrate, applying a negative voltage to the substrate such that a surface potential of Co is lower than an oxidation potential of the Co, and in a state when the negative voltage is applied to the substrate, dipping the Co film in a plating solution mainly containing a copper sulfate solution, thereby a Cu film is formed on the Co film of the substrate by electroplating.