Vertical type semiconductor device producing apparatus

Abstract

A vertical type semiconductor device producing apparatus comprises a vertical type reaction chamber which is to accommodate a plurality of stacked substrates; an exhaust path which exhausts the reaction chamber, a vacuum exhaust device which exhausts the reaction chamber through the exhaust path; an exhaust valve which opens and closes the exhaust path; a first supply path which supplies a first kind of gas, which contributes to film formation, to the reaction chamber; a second supply path which supplies a second kind of gas, which contributes to the film formation, to the reaction chamber; a first and a second gas supply valves which respectively open and close the first and second supply paths; and a controller which controls the exhaust valve and the first and second gas supply valves such that when the first kind of gas is supplied to the reaction chamber, the first kind of gas is supplied to the reaction chamber from the first supply path in a state in which exhaust of the reaction chamber is being stopped to expose the plurality of substrates in the reaction chamber to the first kind of gas, and when the second kind of gas is supplied to the reaction chamber, the second kind of gas is supplied to the reaction chamber through the second supply path in a state in which the reaction chamber is being exhausted by the vacuum exhaust device to expose the plurality of substrates in the reaction chamber to the second kind of gas.

1 . A semiconductor device producing apparatus, comprising:
 a reaction chamber for accommodating a plurality of substrates stacked in a multistage manner;   an exhaust path that exhausts the reaction chamber;   a vacuum exhaust device that exhausts the reaction chamber through the exhaust path;   an exhaust valve that opens and closes the exhaust path;   a supply path that supplies reaction gas to the reaction chamber;   a nozzle that stands in the reaction chamber along a stacking direction of the substrates;   a gas supply valve that opens and closes the supply path; and   a controller that controls the exhaust valve and the gas supply valve,   wherein the nozzle is provided with a plurality of gas supply holes such that the gas supply holes are respectively opposed to the substrates, and   wherein the controller is configured such that the controller controls the exhaust valve and the gas supply valve to allow the reaction gas to be supplied into the reaction chamber with exhaust of the reaction chamber being substantially stopped to process the substrates.   
     
     
         2 . A semiconductor device producing apparatus, comprising:
 a reaction chamber for accommodating a plurality of substrates stacked in a multistage manner;   an exhaust path that exhausts the reaction chamber;   a vacuum exhaust device that exhausts the reaction chamber through the exhaust path;   an exhaust valve that opens and closes the exhaust path;   a first supply path that supplies a first kind of reaction gas to the reaction chamber;   a first nozzle that is connected to the first supply path and that stands in the reaction chamber along a stacking direction of the substrates;   a second supply path that supplies a second kind of reaction gas to the reaction chamber;   a second nozzle that is connected to the second supply path and that stands in the reaction chamber along the stacking direction of the substrates;   a first gas supply valve that opens and closes the first supply path;   a second gas supply valve that opens and closes the second supply path; and   a controller that controls the exhaust valve, the first supply valve and the second gas supply valve,   wherein the first and second nozzles are respectively provided with a plurality of gas supply holes such that the gas supply holes are respectively opposed to the substrates, and   wherein the controller is configured such that the controller controls the exhaust valve, the first gas supply valve and the second gas supply valve to allow the first kind of reaction gas and the second kind of reaction gas to be alternately supplied into the reaction chamber, to allow, when the first kind of gas is supplied into the reaction chamber, the first kind of reaction gas to be supplied into the reaction chamber through the first supply path with exhaust of the reaction chamber being substantially stopped, and to allow, when the second kind of gas is supplied into the reaction chamber, the second kind of reaction gas to be supplied into the reaction chamber through the second supply path with the reaction chamber being exhausted.