Thin film coated process kits for semiconductor manufacturing tools

Abstract

A plasma processing apparatus used in semiconductor device manufacturing includes a process kit formed of insulating materials such as quartz and coated with a Y 2 O 3 coating. The Y 2 O 3 coating is a thin film formed using suitable CVD or PVD operations. The Y 2 O 3 coating is resistant to degradation in fluorine etching chemistries commonly used to etch silicon in semiconductor manufacturing. The plasma processing apparatus may be used in etching, stripping and cleaning operations. Also provided in another embodiment is a plasma processing apparatus having a quartz process kit coated with a sapphire-like film.

1 . A semiconductor manufacturing apparatus comprising a plasma processing chamber including therein a process kit formed of quartz and having a Y 2 O 3  coating on exposed surfaces thereof. 
     
     
         2 . The semiconductor manufacturing apparatus as in  claim 1 , wherein said process kit includes a focus ring laterally surrounding a chuck. 
     
     
         3 . The semiconductor manufacturing apparatus as in  claim 1 , wherein said process kit includes at least a quartz disk disposed over a chuck, and a window. 
     
     
         4 . The semiconductor manufacturing apparatus as in  claim 3 , wherein said quartz disk is disposed between said chuck and an electrode or coil. 
     
     
         5 . The semiconductor manufacturing apparatus as in  claim 1 , wherein said Y 2 O 3  coating is deposited on said exposed surfaces using one of CVD (chemical vapor deposition) and PVD (physical vapor deposition). 
     
     
         6 . The semiconductor manufacturing apparatus as in  claim 1 , wherein said Y 2 O 3  coating includes a thickness less than 20 microns. 
     
     
         7 . The semiconductor manufacturing apparatus as in  claim 1 , further comprising a gas delivery system that delivers a fluorine chemistry to said plasma processing chamber, and RF generation means that generate a fluorine-containing plasma within said plasma etching chamber. 
     
     
         8 . The semiconductor manufacturing apparatus as in  claim 1 , wherein internal walls of said plasma processing chamber include a coating of yttria thereon. 
     
     
         9 . A semiconductor manufacturing apparatus comprising a plasma etching chamber including therein a process kit including quartz components and having a coating on exposed surfaces of said quartz components, said coating being a yttria coating or a sapphire-like coating. 
     
     
         10 . The semiconductor manufacturing apparatus as in  claim 9 , wherein said coating comprises said sapphire-like coating and is deposited on said exposed surfaces using one of CVD (chemical vapor deposition) and PVD (physical vapor deposition). 
     
     
         11 . The method as in  claim 10 , further comprising a Y 2 O 3  coating on internal walls of said plasma etching chamber. 
     
     
         12 . A method for manufacturing a semiconductor processing apparatus, said method comprising:
 providing a plasma processing chamber;   providing a quartz process kit within said plasma processing chamber; and   forming a Y 2 O 3  coating on exposed surfaces of said quartz process kit.   
     
     
         13 . The method as in  claim 12 , wherein said forming a Y 2 O 3  coating comprises one of CVD (chemical vapor deposition) and PVD (physical vapor deposition). 
     
     
         14 . The method as in  claim 12 , further comprising coating inner surfaces of said plasma processing chamber with a Y 2 O 3  film. 
     
     
         15 . The method as in  claim 12 , wherein said forming comprises forming said Y 2 O 3  coating to a thickness of no more than 20 microns. 
     
     
         16 . The method as in  claim 12 , wherein said process kit comprises a focus ring laterally surrounding a chuck, a quartz disk disposed over said chuck, and a window. 
     
     
         17 . The method as in  claim 12 , further comprising generating a fluorine-containing plasma in said processing chamber. 
     
     
         18 . The method as in  claim 17 , further comprising etching or cleaning a film on a semiconductor substrate disposed in said chamber, using said plasma. 
     
     
         19 . The method as in  claim 18 , wherein said film comprises polysilicon. 
     
     
         20 . The method as in  claim 12 , wherein said forming a Y 2 O 3  coating takes place in another processing tool and before said quartz process kit is disposed within said plasma processing chamber.