Temperature control system, temperature control method, plasma processing apparatus and computer storage medium

Abstract

There is provided a temperature control system configured to control a temperature of a temperature control target member of a processing chamber for performing a plasma process on a substrate therein. The temperature control system includes a heating unit configured to heat the temperature control target member; a cooling unit configured to cool the temperature control target member by circulating a liquid coolant; and a flow rate control unit configured to control a flow rate of the coolant into the temperature control target member by the cooling unit to a first flow rate when plasma is generated within the processing chamber and to a second flow rate lower than the first flow rate when plasma is not generated within the processing chamber.

1 . A temperature control system configured to control a temperature of a temperature control target member of a processing chamber for performing a plasma process on a substrate therein, the system comprising:
 a heating unit configured to heat the temperature control target member;   a cooling unit configured to cool the temperature control target member by circulating a liquid coolant; and   a flow rate control unit configured to control a flow rate of the coolant into the temperature control target member by the cooling unit to a first flow rate when plasma is generated within the processing chamber and to a second flow rate lower than the first flow rate when plasma is not generated within the processing chamber.   
     
     
         2 . The temperature control system of  claim 1 , wherein the flow rate control unit is configured to change the flow rate of the coolant into the temperature control target member by driving a flow path switching valve provided on a flow path for circulating the coolant in order to alter a flow path along which the coolant flows through the temperature control target member to a flow path along which the coolant bypasses the temperature control target member. 
     
     
         3 . The temperature control system of  claim 1 , wherein the flow rate control unit is configured to change the flow rate of the coolant into the temperature control target member by changing a discharge amount of a pump for circulating the coolant. 
     
     
         4 . The temperature control system of  claim 1 , wherein the temperature control target member is a mounting table for mounting the substrate thereon within the processing chamber. 
     
     
         5 . A temperature control method that controls a temperature of a temperature control target member of a processing chamber for performing a plasma process on a substrate therein by a temperature control system including a heating unit configured to heat the temperature control target member, and a cooling unit configured to cool the temperature control target member by circulating a liquid coolant, the method comprising:
 controlling a flow rate of the coolant into the temperature control target member by the cooling unit to a first flow rate when plasma is generated within the processing chamber and to a second flow rate lower than the first flow rate when plasma is not generated within the processing chamber.   
     
     
         6 . The temperature control method of  claim 5 , wherein the flow rate control unit is configured to change the flow rate of the coolant into the temperature control target member by driving a flow path switching valve provided on a flow path for circulating the coolant in order to alter a flow path along which the coolant flows through the temperature control target member to a flow path along which the coolant bypasses the temperature control target member. 
     
     
         7 . The temperature control method of  claim 5 , wherein the flow rate control unit is configured to change the flow rate of the coolant into the temperature control target member by changing a discharge amount of a pump for circulating the coolant. 
     
     
         8 . The temperature control method of  claim 5 , wherein the temperature control target member is a mounting table for mounting the substrate thereon within the processing chamber. 
     
     
         9 . A plasma processing apparatus comprising:
 a processing chamber;   a lower electrode serving as a mounting table configured to mount a substrate thereon within the processing chamber;   an upper electrode disposed opposite to the lower electrode within the processing chamber;   a gas supply mechanism configured to supply a processing gas into the processing chamber;   a high frequency power supply configured to supply a high frequency power to the lower electrode and excite the processing gas into plasma;   a heating unit configured to heat a temperature control target member of the processing chamber;   a cooling unit configured to cool the temperature control target member by circulating a liquid coolant; and   a flow rate control unit configured to control a flow rate of the coolant into the temperature control target member by the cooling unit to a first flow rate when plasma is generated within the processing chamber and to a second flow rate lower than the first flow rate when plasma is not generated within the processing chamber.   
     
     
         10 . The plasma processing apparatus of  claim 9 , wherein the flow rate control unit is configured to change the flow rate of the coolant into the temperature control target member by driving a flow path switching valve provided on a flow path for circulating the coolant in order to alter a flow path along which the coolant flows through the temperature control target member to a flow path along which the coolant bypasses the temperature control target member. 
     
     
         11 . The plasma processing apparatus of  claim 9 , wherein the flow rate control unit is configured to change the flow rate of the coolant into the temperature control target member by changing a discharge amount of a pump for circulating the coolant. 
     
     
         12 . The plasma processing apparatus of  claim 9 , wherein the temperature control target member is a mounting table for mounting the substrate thereon within the processing chamber. 
     
     
         13 . A computer storage medium having stored therein computer-executable instructions that, in response to execution, cause a temperature control system to perform a temperature control method as claimed in  claim 5 .