Composition for metal plating comprising suppressing agent for void free submicron feature filling

Abstract

Composition comprising a source of metal ions and at least one suppressing agent obtainable by reacting a) an amine compound comprising at least three active amino functional groups with b) a mixture of ethylene oxide and at least one compound selected from C3 and C4 alkylene oxides.

1 - 15 . (canceled) 
     
     
         16 . A composition, comprising:
 a source of at least one metal ion; and   at least one suppressing agent obtained by a method comprising reacting   a) an amine compound comprising at least three active amino functional groups with   b) a mixture of ethylene oxide and at least one compound selected from the group consisting of a C3 alkylene oxide and a C4 alkylene oxide,   wherein a content of ethylene oxide and any C3 to C4 alkylene oxide in the at least one suppressing agent is from 30 to 70 wt %.   
     
     
         17 . The composition of  claim 16 , wherein the at least one metal ion comprises copper ions. 
     
     
         18 . The composition of  claim 16 , wherein the at least one suppressing agent has a formula (I): 
       
         
           
           
               
               
           
         
         wherein 
         R 1  radicals are each independently a copolymer of ethylene oxide and at least one selected from the group consisting of a C3 alkylene oxide and a C4 alkylene oxide, 
         wherein the copolymer is a random copolymer; 
         R 2  radicals are each independently selected from the group consisting of R 1  radicals and an alkylene; 
         X and Y are spacer groups independently and X for each repeating unit independently is selected from the group consisting of a C1 alkylene, a C2 alkylene, a C3 alkylene, a C4 alkylene, a C5 alkylene, a C6 alkylene and a Z—(O—Z) m , wherein each of a Z radical is independently selected from the group consisting of a C2 alkylene, a C3 alkylene, a C4 alkylene, a C5 alkylene, and a C6 alkylene; 
         n is an integer equal to or greater than 0; and 
         m is an integer equal to or greater than 1. 
       
     
     
         19 . The composition of  claim 18 , wherein X and Y independently, and X for each repeating unit independently, are selected from the group consisting of a C1 alkylene, a C2 alkylene, a C3 alkylene and a C4 alkylene. 
     
     
         20 . The composition of  claim 16 , wherein the amine compound is at least one selected from the group consisting of a diethylene triamine, a 3-(2-aminoethyl)aminopropylamine, a 3,3′-iminodi(propylamine), a N,N-bis(3-aminopropyl)methylamine, a bis(3-dimethylaminopropyl)amine, a triethylenetetraamine and a N,N ‘-bis(3-aminopropyl)ethylenediamine. 
     
     
         21 . The composition of  claim 16 , wherein the at least one compound selected from the group consisting of a C3 alkylene oxide and a C4 alkylene oxide is a propylene oxide. 
     
     
         22 . The composition of  claim 16 , wherein the molecular weight M w  of the at least one suppressing agent is 6000 g/mol or more. 
     
     
         23 . The composition of  claim 22 , wherein the molecular weight M w  of the at least one suppressing agent is from 7000 to 19000 g/mol. 
     
     
         24 . The composition of  claim 16 , further comprising at least one accelerating agent. 
     
     
         25 . The composition of  claim 16 , further comprising at least one leveling agent. 
     
     
         26 . A method of depositing a metal on a substrate, the method comprising:
 contacting the substrate with a metal plating bath comprising the composition of  claim 16 ,   wherein the substrate comprises at least one feature having an aperture size of 30 nanometers or less.   
     
     
         27 . A process, depositing a metal layer on a substrate, the process comprising:
 a) contacting a metal plating bath comprising a composition of  claim 16  with the substrate; and   b) applying a current density to the substrate for a time sufficient to deposit the metal layer onto the substrate.   
     
     
         28 . The process of  claim 27 , wherein the substrate comprises at least one submicrometer sized feature and the deposition is performed to fill the at least one submicrometer sized feature. 
     
     
         29 . The process of  claim 28 , wherein the at least one submicrometer-sized feature has at least one selected from the group consisting of an aperture size from 1 to 30 nm and an aspect ratio of 4 or more. 
     
     
         30 . The composition of  claim 17 , wherein the amine compound is at least one selected from the group consisting of a diethylene triamine, a 3-(2-aminoethyl)aminopropylamine, a 3,3′-iminodi(propylamine), a N,N-bis(3-aminopropyl)methylamine, a bis(3-dimethylaminopropyl)amine, a triethylenetetraamine and a N,N′-bis(3-aminopropyl)ethylenediamine. 
     
     
         31 . The composition of  claim 17 , wherein the at least one compound selected from the group consisting of a C3 alkylene oxide and a C4 alkylene oxide is a propylene oxide. 
     
     
         32 . The composition of  claim 17 , wherein the molecular weight M w  of the at least one suppressing agent is 6000 g/mol or more. 
     
     
         33 . The composition of  claim 32 , wherein the molecular weight M w  of the at least one suppressing agent is from 7000 to 19000 g/mol. 
     
     
         34 . The composition of  claim 17 , further comprising at least one accelerating agent. 
     
     
         35 . The composition of  claim 17 , further comprising at least one leveling agent.