Film for flip chip type semiconductor back surface and its use

Abstract

The present invention relates to a film for flip chip type semiconductor back surface, which is to be disposed on a back surface of a semiconductor element flip chip-connected onto an adherend, the film for flip chip type semiconductor back surface including an adhesive layer and a protective layer laminated on the adhesive layer, in which the protective layer is constituted of a heat-resistant resin having a glass transition temperature of 200° C. or more or a metal.

1 . A film for flip chip type semiconductor back surface, which is to be disposed on a back surface of a semiconductor element flip chip-connected onto an adherend,
 the film for flip chip type semiconductor back surface comprising an adhesive layer and a protective layer laminated on the adhesive layer,   wherein the protective layer comprises a heat-resistant resin having a glass transition temperature of 200° C. or more or a metal.   
     
     
         2 . The film for flip chip type semiconductor back surface according to  claim 1 , wherein the heat-resistant resin is at least one selected from the group consisting of a polyimide, a polyphenylene sulfide, a polysulfone, a polyether imide, a polyether ketone and a polyether ether ketone. 
     
     
         3 . The film for flip chip type semiconductor back surface according to  claim 2 , wherein the heat-resistant resin is a polyimide. 
     
     
         4 . The film for flip chip type semiconductor back surface according to  claim 1 , wherein the metal is at least one selected from the group consisting of aluminum, alumite, stainless steel, iron, titanium, tin and copper. 
     
     
         5 . The film for flip chip type semiconductor back surface according to  claim 1 , wherein a surface of the protective layer facing the adhesive layer has been subjected to a surface activation treatment. 
     
     
         6 . The film for flip chip type semiconductor back surface according to  claim 5 , wherein the surface activation treatment is at least one treatment selected from the group consisting of a plasma treatment, an ozone water treatment, an ultraviolet ozone treatment and an ion beam treatment. 
     
     
         7 . A dicing tape-integrated film for semiconductor back surface, which comprises:
 a dicing tape comprising a base material and a pressure-sensitive adhesive layer laminated on the base material, and   the film for flip chip type semiconductor back surface according to  claim 1 , which is laminated on the pressure-sensitive adhesive layer so that the protective layer faces the pressure-sensitive adhesive layer.   
     
     
         8 . A method for producing a semiconductor device, the method comprising:
 attaching a semiconductor wafer onto the film for flip chip type semiconductor back surface in the dicing tape-integrated film for semiconductor back surface according to  claim 7 ,   dicing the semiconductor wafer to form a semiconductor element,   peeling the semiconductor element together with the film for flip chip type semiconductor back surface from the pressure-sensitive adhesive layer of the dicing tape,   adhering a flux to a connecting member for an adherend in the semiconductor element, and   flip chip-connecting the semiconductor element onto the adherend.