System and method of vapor deposition

Abstract

Provided is a system for vapor deposition of a coating material onto a semiconductor substrate. The system includes a chemical supply chamber, a supply nozzle operable to dispense vapor, and a heating element operable to provide heat to a substrate in-situ with the dispensing of vapor. The system may further include reaction chamber(s) and/or mixing chamber(s).

1 . A deposition system, comprising:
 a chemical supply chamber;   a supply nozzle operable to dispense vapor; and   a heating element operable to provide heat to a substrate in-situ with the dispensing of vapor.   
     
     
         2 . The system of  claim 1 , further comprising:
 a mixing chamber for mixing two or more chemical components provided by the chemical supply chamber.   
     
     
         3 . The system of  claim 1 , further comprising:
 a reaction chamber for reacting two or more chemical components provided by the chemical supply chamber.   
     
     
         4 . The system of  claim 3 , wherein the reaction chamber is connected to the supply nozzle such that the reacted two or more chemicals are provided to the supply nozzle. 
     
     
         5 . The system of  claim 1 , wherein a semiconductor substrate is positioned on the heating element while a material is vapor deposited. 
     
     
         6 . The system of  claim 1 , further comprising:
 a vaporization device positioned in the chemical supply chamber.   
     
     
         7 . The system of  claim 1 , wherein the chemical supply chamber includes a first chamber and a second chamber. 
     
     
         8 . The system of  claim 7 , wherein the first and second chambers include a nozzle for controlling the flow of a chemical from each of the first chamber and the second chamber. 
     
     
         9 . The system of  claim 1 , further comprising:
 a vacuum device.   
     
     
         10 . An apparatus, comprising:
 a first material supply chamber and a second material supply chamber;   a mixing chamber connected to the first and second material supply chambers;   a reaction chamber connected to the mixing chamber; and   a plurality of nozzles overlying a heating element operable to hold a substrate.   
     
     
         11 . The apparatus of  claim 10 , wherein the first and second material supply chambers each include a valve that controls a flow of a material exiting the first and second material supply chambers. 
     
     
         12 . The apparatus of  claim 10 , further comprising:
 a vacuum device positioned adjacent the heating element.   
     
     
         13 . The apparatus of  claim 12 , wherein the vacuum device is operable to remove outgassing from the substrate disposed on the heating element. 
     
     
         14 . The apparatus of  claim 10 , wherein the substrate is a silicon wafer. 
     
     
         15 . The apparatus of  claim 10 , wherein the plurality of nozzles dispense a photosensitive material. 
     
     
         16 . A system of vapor deposition, comprising:
 a first material supply chamber and a second material supply chamber;   a mixing chamber connected to the first and second material supply chambers;   a plurality of nozzles overlying a base operable to position a substrate; and   a heating element disposed in the base.   
     
     
         17 . The system of vapor deposition of  claim 16 , wherein the heating element is operable to heat the substrate as vapor is dispensed from the plurality of nozzles. 
     
     
         18 . The system of vapor deposition of  claim 16 , further comprising:
 a vacuum device adjacent the base, wherein the vacuum device is operable to remove an evaporated chemical from the substrate positioned on the base.   
     
     
         19 . The system of vapor deposition of  claim 16 , further comprising:
 a reaction chamber connected to the mixing chamber, wherein the reaction chamber interposes the mixing chamber and the plurality of nozzles.   
     
     
         20 . The system of vapor deposition of  claim 16 , further comprising:
 a third material supply chamber connected to the mixing chamber.