US2012098126A1PendingUtilityA1

Semiconductor device and manufacturing method therefor

Assignee: IWASAKI TOSHIHIROPriority: Oct 21, 2010Filed: Oct 14, 2011Published: Apr 26, 2012

Est. expiryOct 21, 2030(~4.2 yrs left)· nominal 20-yr term from priority

Inventors:Toshihiro Iwasaki Takeumi Kato Takanori Okita Yoshikazu Shimote Shinji Baba Kazuyuki Nakagawa Michitaka Kimura

H10W 90/701H10W 90/00H10W 74/00H10W 72/07337H10W 72/07253H10W 72/07252H10W 72/07236H10W 72/07232H10W 72/07211H10W 72/07178H10W 72/07173H10W 72/07141H10W 72/01955H10W 72/01953H10W 72/01951H10W 72/01938H10W 72/01935H10W 72/01271H10W 72/01257H10W 72/01255H10W 72/01223H10W 72/952H10W 72/923H10W 72/252H10W 72/248H10W 72/247H10W 72/244H10W 72/241H10W 72/231H10W 72/228H10W 72/227H10W 72/073H10W 72/072H10W 72/30H10W 72/29H10W 72/019H10W 72/012H10W 70/65H10W 74/012H10W 72/0198H10W 70/093H10W 74/15

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References

Claims

Abstract

The joint reliability in flip chip bonding of a semiconductor device is enhanced. Prior to flip chip bonding, flux 9 is applied to the solder bumps 5 a for flip chip bonding over a substrate and reflow/cleaning is carried out and then flip chip bonding is carried out. This makes is possible to thin the oxide film over the surfaces of the solder bumps 5 a and make the oxide film uniform. As a result, it is possible to suppress the production of local solder protrusions to reduce the production of solder bridges during flip chip bonding and enhance the joint reliability in the flip chip bonding of the semiconductor device.

Claims

exact text as granted — not AI-modified

1 . A semiconductor device comprising:
 a wiring board having an upper surface and a lower surface located on the opposite side to the upper surface and having a plurality of electrodes for flip chip bonding formed in the upper surface;   a semiconductor chip placed over the upper surface of the wiring board by flip chip bonding;   a plurality of external terminals provided in the lower surface of the wiring board,   wherein shortest parts where the distance between the outer shape pattern of the electrode for flip chip bonding as viewed in a plane and the bump placement portion pattern for the electrode for flip chip bonding as viewed in a plane is shortest between adjacent bumps for the flip chip bonding are arranged in such positions where the shortest parts are not opposed to each other between the bumps.   
     
     
         2 . The semiconductor device of  claim 1 ,
 wherein the shortest parts are arranged in such positions that the directions of the respective solder protrusions thereof are identical between the bumps.   
     
     
         3 . The semiconductor device of  claim 1 ,
 wherein the shortest parts are arranged in such positions that the directions of the respective solder protrusions thereof differ from one another between the bumps.   
     
     
         4 . A manufacturing method for a semiconductor device, comprising the steps of:
 (a) preparing a wiring board having an upper surface and a lower surface located on the opposite side to the upper surface and having a plurality of electrodes for flip chip bonding formed in the upper surface;   (b) preparing a semiconductor chip having each of plurality of bump electrodes formed over an electrode pad;   (c) forming a solder ball over each of the electrodes for flip chip bonding of the wiring board;   (d) after the step (c), applying flux to the solder balls and then carrying out reflow/cleaning on the solder balls; and   (e) flip chip bonding together the bump electrodes of the semiconductor chip and the solder balls of the wiring board.   
     
     
         5 . The manufacturing method for a semiconductor device of  claim 4 ,
 wherein at the step (c), solder paste is applied to the electrodes for flip chip bonding and then reflow/cleaning is carried out to form the solder balls.   
     
     
         6 . The manufacturing method for a semiconductor device of  claim 4 ,
 wherein when the flip chip bonding is carried out at the step (e), at least any one of the bump electrodes on the chip side and the solder balls on the substrate side is melted before bonding.   
     
     
         7 . The manufacturing method for a semiconductor device of  claim 4 ,
 wherein electronic components are solder mounted around the semiconductor chip in the upper surface of the wiring board.   
     
     
         8 . The manufacturing method for a semiconductor device of  claim 4 ,
 wherein when the flip chip bonding is carried out at the step (e), the flip chip bonding is carried out by pressing the semiconductor chip into the wiring board by two-staged pressing, first pressing and second pressing after the first pressing.   
     
     
         9 . The manufacturing method for a semiconductor device of  claim 8 ,
 wherein the pressing amount in the first pressing is smaller than the pressing amount in the second pressing.   
     
     
         10 . A manufacturing method for a semiconductor device, comprising the steps of:
 (a) preparing a wiring board having an upper surface and a lower surface located on the opposite side to the upper surface and having a plurality of electrodes for flip chip bonding formed in the upper surface;   (b) preparing a semiconductor chip having each of a plurality of bump electrodes formed over an electrode pad;   (c) applying flux paste to each of the electrodes for flip chip bonding of the wiring board;   (d) placing a solder ball over the flux paste over each of the electrodes for flip chip bonding;   (e) after the step (d), carrying out reflow/cleaning on the solder balls; and   (f) flip chip bonding together the bump electrodes of the semiconductor chip and the solder balls of the wiring board.   
     
     
         11 . The manufacturing method for a semiconductor device of  claim 10 ,
 wherein when the flip chip bonding is carried out at the step (f), at least any one of the bump electrodes on the chip side and the solder balls on the substrate side is melted before bonding.   
     
     
         12 . The manufacturing method for a semiconductor device of  claim 10 ,
 wherein electronic components are solder mounted around the semiconductor chip in the upper surface of the wiring board.   
     
     
         13 . The manufacturing method for a semiconductor device of  claim 10 ,
 wherein when the flip chip bonding is carried out at the step (f), the flip chip bonding is carried out by pressing the semiconductor chip into the wiring board by two-staged pressing, first pressing and second pressing after the first pressing.   
     
     
         14 . The manufacturing method for a semiconductor device of  claim 13 ,
 wherein the pressing amount in the first pressing is smaller than the pressing amount in the second pressing.   
     
     
         15 . A manufacturing method for a semiconductor device, comprising the steps of:
 (a) preparing a wiring board having an upper surface and a lower surface located on the opposite side to the upper surface and having a solder ball formed over a plurality of electrodes for flip chip bonding in the upper surface;   (b) preparing a semiconductor chip having each of a plurality of bump electrodes formed over an electrode pad; and   (c) flip chip bonding together the bump electrodes of the semiconductor chip and the solder balls of the wiring board,   wherein when the flip chip bonding is carried out at the step (c), the flip chip bonding is carried out by pressing the semiconductor chip into the wiring board by two-staged pressing, first pressing and second pressing after the first pressing.   
     
     
         16 . The manufacturing method for a semiconductor device of  claim 15 ,
 wherein the pressing amount in the first pressing is smaller than the pressing amount in the second pressing.

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