Chip package structure and manufacturing methods thereof
Abstract
A chip package structure includes a chip module, a plurality of pre-patterned structures, a filling material layer, and a redistribution layer. The chip module includes a chip including an upper surface, a side surface, and an active surface. The pre-patterned structures are disposed around the chip. Each of the pre-patterned structures includes a circuit, a first surface, an upper surface opposite the first surface, and a side surface. The filling material layer encapsulates the chip and the pre-patterned structures. The filling material layer includes a second surface, and encapsulates the upper and side surfaces of the chip, and the upper and side surfaces of each of the pre-patterned structures. The active surface, each first surface, and the second surface are substantially co-planar. The redistribution layer is disposed on the active surface, each first surface, and the second surface. The redistribution layer electrically connects the chip and each circuit.
Claims
exact text as granted — not AI-modified1 . A semiconductor package, comprising:
a chip having an active surface; a pre-patterned structure disposed adjacent to lateral surfaces of the chip, the pre-patterned structure having a contact on a surface oriented in the same direction as the active surface; a redistribution layer that electrically connects the active surface of the chip with the contact; and a filling material that covers portions of the chip, exposing the active surface and the pre-patterned structure.
2 . The semiconductor package of claim 1 , wherein the active surface of the chip is substantially co-planar with a surface of the pre-patterned structure.
3 . The semiconductor package of claim 2 , wherein the redistribution layer is disposed adjacent to the active surface of the chip and the substantially co-planar surface of the pre-patterned structure.
4 . The semiconductor package of claim 1 , wherein the pre-patterned structure includes interconnected trace layers.
5 . The semiconductor package of claim 1 , wherein the filling material covers the lateral surfaces of the chip.
6 . The semiconductor package of claim 1 , wherein the filling material substantially covers a surface of the pre-patterned structure and has an opening to expose a contact on the surface of the pre-patterned structure.
7 . The semiconductor package of claim 1 , further including a second redistribution layer disposed adjacent to an inactive surface of the chip and electrically connected to the pre-patterned structure.
8 . A semiconductor package, comprising:
a chip having an active surface; an interposer disposed adjacent to a lateral surface of the chip, the interposer having a contact on a surface oriented in the same direction as the active surface; a redistribution layer that electrically connects the active surface of the chip with the contact; and a filling material that covers portions of the chip, exposing the active surface and the pre-patterned structure.
9 . The semiconductor package of claim 8 , wherein the active surface of the chip is substantially co-planar with a surface of the interposer.
10 . The semiconductor package of claim 9 , wherein the redistribution layer is disposed adjacent to the active surface of the chip and the substantially co-planar surface of the interposer.
11 . The semiconductor package of claim 8 , wherein the interposer includes interconnected trace layers.
12 . The semiconductor package of claim 8 , wherein the filling material covers the lateral surfaces of the chip.
13 . The semiconductor package of claim 8 , wherein the filling material substantially covers a surface of the interposer and has an opening to expose a contact on the surface of the interposer.
14 . The semiconductor package of claim 8 , further including a second redistribution layer disposed adjacent to an inactive surface of the chip and electrically connected to the interposer.
15 . The semiconductor package of claim 14 , wherein the filling material has an opening wherein the second redistribution layer is electrically connected to the interposer through the opening.
16 . The semiconductor package of claim 8 , further comprising an adhesive layer disposed on a surface of the filling material.
17 . The semiconductor package of claim 16 , further comprising a protection layer disposed on the adhesive layer, wherein the adhesive layer connects the protection layer to the surface of the filling material.
18 . A method of forming a semiconductor package, comprising:
providing a chip; providing a plurality of separate pre-patterned structures, wherein each of the plurality of separate pre-patterned structures includes a circuit; providing a carrier; disposing the plurality of separate pre-patterned structures and the chip on the carrier such that the plurality of separate pre-patterned structures are positioned adjacent to lateral sides of the chip; and disposing a filling material around the chip and the plurality of separate pre-patterned structures, exposing an active surface of the chip.
19 . The method of claim 18 , wherein each of the plurality of separate pre-patterned structures includes multiple interconnected trace layers.
20 . The method of claim 18 , further comprising:
creating a slot on a surface of each of the separate pre-patterned structures to expose the circuit of the pre-patterned structure; and forming a redistribution layer disposed adjacent to the active surface of the chip and substantially co-planar surfaces of the plurality of the separate pre-patterned structures, wherein the redistribution layer electrically connects the chip and the circuit in each of the plurality of separate pre-patterned structures through the slots.Cited by (0)
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