Stackable semiconductor assembly with bump/base/flange heat spreader and electromagnetic shielding

Abstract

A stackable semiconductor assembly includes a semiconductor device, a heat spreader, an adhesive, a terminal, a plated through-hole and build-up circuitry. The heat spreader includes a bump, a base and a flange. The bump defines a cavity. The semiconductor device is mounted on the bump at the cavity, electrically connected to the build-up circuitry and thermally connected to the bump. The bump extends from the base into an opening in the adhesive, the base extends vertically from the bump opposite the cavity and the flange extends laterally from the bump at the cavity entrance. The build-up circuitry provides signal routing for the semiconductor device. The plated through-hole provides signal routing between the build-up circuitry and the terminal. The heat spreader provides heat dissipation for the semiconductor device.

1 . A thermally enhanced stackable semiconductor assembly, comprising:
 a heat spreader that includes a bump, a base and a flange, wherein (i) the bump is adjacent to the base and the flange, is integral with the flange, extends from the base in a first vertical direction and extends from the flange in a second vertical direction opposite the first vertical direction, (ii) the base extends from and covers the bump in the second vertical direction and extends laterally from the bump in lateral directions orthogonal to the vertical directions, (iii) the flange extends laterally from the bump and is spaced from the base, and (iv) a cavity in the bump faces in the first vertical direction, is covered by the bump in the second vertical direction, is spaced from the base by the bump and has an entrance at the flange;   a substrate that includes an aperture;   an adhesive that includes an opening, wherein the bump extends into the opening and the aperture, and the adhesive contacts the bump, the base, the flange and the substrate, is sandwiched between the bump and the substrate, between the flange and the substrate and between the base and the flange and extends laterally from the bump to peripheral edges of the assembly;   a semiconductor device that includes a contact pad and is mounted on the bump and extends into the cavity;   a first dielectric layer that extends from the semiconductor device and the flange in the first vertical direction and includes a first via opening aligned with the contact pad;   a first conductive trace that extends from the first dielectric layer in the first vertical direction and extends laterally on the first dielectric layer and extends through the first via opening in the second vertical direction to the contact pad to provide an electrical connection for the semiconductor device;   a terminal that extends from the substrate in the second vertical direction and is spaced from the base; and   a plated through-hole that extends through the adhesive and the substrate to provide an electrical connection between the first conductive trace and the terminal.   
     
     
         2 . The assembly of  claim 1 , wherein the cavity extends across most of the bump in the vertical and lateral directions. 
     
     
         3 . The assembly of  claim 1 , wherein the semiconductor device is located at the cavity and is thermally connected to the bump using a die attach that is located within the cavity. 
     
     
         4 . The assembly of  claim 1 , wherein the bump has an irregular thickness characteristic of stamping. 
     
     
         5 . The assembly of  claim 1 , wherein the bump includes a first bent corner adjacent to the base and a second bent corner adjacent to the flange. 
     
     
         6 . The assembly of  claim 1 , wherein the bump is coplanar with the adhesive at the base. 
     
     
         7 . The assembly of  claim 1 , wherein the bump and the flange contact and are sandwiched between the adhesive and the first dielectric layer. 
     
     
         8 . The assembly of  claim 1 , wherein the base and the terminal have the same thickness where closest to one another and different thickness where the base is adjacent to the bump and are coplanar with one another at a surface that faces in the second vertical direction. 
     
     
         9 . The assembly of  claim 1 , wherein the adhesive has a first thickness where it is adjacent to the flange and a second thickness where it is adjacent to the bump that is different from the first thickness. 
     
     
         10 . The assembly of  claim 1 , wherein the first dielectric layer further extends into the cavity. 
     
     
         11 . The assembly of  claim 1 , wherein the flange, the substrate and the first dielectric layer extend to peripheral edges of the assembly. 
     
     
         12 . The assembly of  claim 1 , wherein the plated through-hole is spaced from the heat spreader. 
     
     
         13 . The assembly of  claim 1 , wherein the first dielectric layer includes an additional first via opening aligned with the flange and the first conductive trace extends through the additional first via opening in the second vertical direction to provide an electrical connection for the flange. 
     
     
         14 . The assembly of  claim 1 , wherein the first dielectric layer includes an additional first via opening aligned with the plated through-hole and the first conductive trace extends through the additional first via opening in the second vertical direction to an inner pad that is spaced from and coplanar with and has the same thickness as the flange to provide an electrical connection for the plated through-hole. 
     
     
         15 . The assembly of  claim 1 , further comprising:
 a second dielectric layer that extends from the first dielectric layer and the first conductive trace in the first vertical direction and includes a second via opening aligned with the first conductive trace; and   a second conductive trace that extends from the second dielectric layer in the first vertical direction and extends laterally on the second dielectric layer and extends through the second via opening in the second vertical direction to the first conductive trace to provide an electrical connection for the first conductive trace.   
     
     
         16 . A thermally enhanced stackable semiconductor assembly, comprising:
 a heat spreader that includes a bump, a base and a flange, wherein (1) the bump is adjacent to the base and the flange, is integral with the flange, extends from the base in a first vertical direction and extends from the flange in a second vertical direction opposite the first vertical direction, (ii) the base extends from and covers the bump in the second vertical direction and extends laterally from the bump in lateral directions orthogonal to the vertical directions, (iii) the flange extends laterally from the bump and is spaced from the base, and (iv) a cavity in the bump faces in the first vertical direction, is covered by the bump in the second vertical direction, is spaced from the base by the bump and has an entrance at the flange;   an adhesive that includes an opening, wherein the bump extends into the opening, and the adhesive contacts the bump, the base and the flange, laterally covers and surrounds and conformally coats a sidewall of the bump and extends laterally from the bump to peripheral edges of the assembly;   a semiconductor device that includes a contact pad and is mounted on the bump and extends into the cavity;   a first dielectric layer that extends from the semiconductor device and the flange in the first vertical direction and includes a first via opening aligned with the contact pad;   a first conductive trace that extends from the first dielectric layer in the first vertical direction and extends laterally on the first dielectric layer and extends through the first via opening in the second vertical direction to the contact pad to provide an electrical connection for the semiconductor device;   a terminal that extends from the adhesive in the second vertical direction and is spaced from the base; and   a plated through-hole that extends through the adhesive to provide an electrical connection between the first conductive trace and the terminal.   
     
     
         17 . The assembly of  claim 16 , wherein the cavity extends across most of the bump in the vertical and lateral directions. 
     
     
         18 . The assembly of  claim 16 , wherein the semiconductor device is located at the cavity and is thermally connected to the bump using a die attach that is located within the cavity. 
     
     
         19 . The assembly of  claim 16 , wherein the bump has an irregular thickness characteristic of stamping. 
     
     
         20 . The assembly of  claim 16 , wherein the bump includes a first bent corner adjacent to the base and a second bent corner adjacent to the flange. 
     
     
         21 . The assembly of  claim 16 , wherein the bump is coplanar with the adhesive at the base. 
     
     
         22 . The assembly of  claim 16 , wherein the bump and the flange contact and are sandwiched between the adhesive and the first dielectric layer. 
     
     
         23 . The assembly of  claim 16 , wherein the base and the terminal have the same thickness where closest to one another and different thickness where the base is adjacent to the bump and are coplanar with one another at a surface that faces in the second vertical direction. 
     
     
         24 . The assembly of  claim 16 , wherein the adhesive has a first thickness where it is adjacent to the flange and a second thickness where it is adjacent to the bump that is different from the first thickness. 
     
     
         25 . The assembly of  claim 16 , wherein the first dielectric layer further extends into the cavity. 
     
     
         26 . The assembly of  claim 16 , wherein the flange and the first dielectric layer extend to peripheral edges of the assembly. 
     
     
         27 . The assembly of  claim 16 , wherein the plated through-hole is spaced from the heat spreader. 
     
     
         28 . The assembly of  claim 16 , wherein the first dielectric layer includes an additional first via opening aligned with the flange and the first conductive trace extends through the additional first via opening in the second vertical direction to provide an electrical connection for the flange. 
     
     
         29 . The assembly of  claim 16 , wherein the first dielectric layer includes an additional first via opening aligned with the plated through-hole and the first conductive trace extends through the additional first via opening in the second vertical direction to an inner pad that is spaced from and coplanar with and has the same thickness as the flange to provide an electrical connection for the plated through-hole. 
     
     
         30 . The assembly of  claim 16 , further comprising:
 a second dielectric layer that extends from the first dielectric layer and the first conductive trace in the first vertical direction and includes a second via opening aligned with the first conductive trace; and   a second conductive trace that extends from the second dielectric layer in the first vertical direction and extends laterally on the second dielectric layer and extends through the second via opening in the second vertical direction to the first conductive trace to provide an electrical connection for the first conductive trace.