US2012176591A1PendingUtilityA1
Method and device for the correction of imaging defects
Est. expiryJan 30, 2026(expired)· nominal 20-yr term from priority
G03F 7/70933G03F 7/70308G03F 7/70825G02B 5/20
55
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Claims
Abstract
The disclosure relates to a microlithography projection exposure system having optical corrective elements configured to modify the imaging characteristics, as well as related systems and component.
Claims
exact text as granted — not AI-modified1 .- 42 . (canceled)
43 . A method, comprising:
recording usage parameters of a microlithography projection exposure system comprising an optical corrective element; predicting degradation phenomena; producing at least one matched corrective element in advance; and replacing the optical corrective element.
44 . The method as claimed in claim 43 , further comprising measuring the usage parameters.
45 . The method as claimed in claim 43 , wherein the degradation phenomena are predicted on the basis of drift measurements and/or known exposure settings.
46 - 53 . (canceled)
54 . The method of claim 43 , wherein the method corrects image defects of the microlithography projection exposure system.
55 . The method of claim 43 , wherein the method comprises replacing the optical corrective element with the at least one matched corrective element.
56 . The method of claim 43 , wherein the method comprises predicting the degradation phenomena based on the usage parameters.
57 . A method, comprising:
predicting degradation phenomena of a microlithography projection exposure system comprising a first optical corrective element based on usage parameters of the microlithography projection exposure system; producing a second optical corrective element based on the predicted degradation phenomena; and replacing the first optical corrective element with the second optical corrective element.
58 . The method of claim 57 , wherein replacing the first optical corrective element with the optical corrective element reduces image defects of the microlithography projection exposure system.
59 . The method of claim 57 , further comprising measuring the usage parameters.
60 . The method of claim 59 , wherein the degradation phenomena are predicted based on drift measurements and/or known exposure settings.
61 . The method of claim 57 , wherein the degradation phenomena are predicted based on drift measurements and/or known exposure settings.
62 . The method of claim 57 , wherein, before replacing the first optical corrective element, the first optical corrective element is arranged at a distance from a pupil plane of the microlithography projection exposure system which corresponds to a sub-aperture ratio of greater than 0.75.
63 . The method of claim 57 , wherein, after replacing the first optical corrective element, the second optical corrective element is arranged at a distance from the pupil plane of the microlithography projection exposure system which corresponds to a sub-aperture ratio of greater than 0.75.
64 . The method of claim 57 , wherein first optical corrective element is a plane parallel plate.
65 . The method of claim 57 , wherein first optical corrective element is a screen.
66 . A method, comprising:
producing a second optical corrective element based on predicted degradation phenomena of a microlithography projection exposure system comprising a first optical corrective element, the predicted degradation phenomena being based on usage parameters of the microlithography projection exposure system; and replacing the first optical corrective element with the second optical corrective element.
67 . The method of claim 66 , wherein replacing the first optical corrective element with the optical corrective element reduces image defects of the microlithography projection exposure system.
68 . The method of claim 66 , further comprising measuring the usage parameters.
69 . The method of claim 68 , wherein the degradation phenomena are predicted based on drift measurements and/or known exposure settings.
70 . The method of claim 66 , wherein the degradation phenomena are predicted on drift measurements and/or known exposure settings.Cited by (0)
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