Integrated shadow mask/carrier for pattern ion implantation

Abstract

An improved, lower cost method of processing substrates, such as to create solar cells is disclosed. In addition, a modified substrate carrier is disclosed. The carriers typically used to carry the substrates are modified so as to serve as shadow masks for a patterned implant. In some embodiments, various patterns can be created using the carriers such that different process steps can be performed on the substrate by changing the carrier or the position with the carrier. In addition, since the alignment of the substrate to the carrier is critical, the carrier may contain alignment features to insure that the substrate is positioned properly on the carrier. In some embodiments, gravity is used to hold the substrate on the carrier, and therefore, the ions are directed so that the ion beam travels upward toward the bottom side of the carrier.

1 . A method of implanting ions into a substrate comprising:
 placing a first substrate on a carrier, wherein said carrier has a surface defining at least one aperture that extends through said carrier and wherein said substrate is held on said carrier using gravity;   implanting said first substrate through said aperture;   removing said first substrate from said carrier;   placing a second substrate on said carrier after said removing, wherein said second substrate is held on said carrier using gravity;   implanting said second substrate through said aperture; and   removing said second substrate from said carrier,   
     
     
         2 . The method of  claim 1 , wherein said implanting comprises using ion beam projected substantially in a direction opposite of gravity. 
     
     
         3 . The method of  claim 1 , further comprising aligning said first substrate on said carrier with respect to said aperture and aligning said second, substrate on said carrier with respect to said aperture. 
     
     
         4 . The method of  claim 1 , wherein said carrier further comprises a second aperture, 
     
     
         5 . The method of  claim 4 , further comprising placing a third substrate on said carrier with said first substrate and implanting said third substrate through said second aperture. 
     
     
         6 . The method of  claim 4 , further comprising placing a fourth substrate on said carrier with said second substrate and implanting said fourth substrate through said second aperture. 
     
     
         7 . The method of  claim 1 , wherein said carrier is part of a conveyor belt. 
     
     
         8 . A method of implanting ions into a substrate comprising:
 placing a plurality of substrates on a carrier, wherein said carrier has a surface defining a plurality of apertures that extend through said carrier and wherein said substrates are held on said carrier using gravity such that each of said substrates is disposed over one of said apertures;   implanting said substrates through, said, apertures with an ion beam; and   removing said substrates from said carrier.   
     
     
         9 . The method of  claim 8 , wherein said ion beam is projected substantially in a direction opposite of gravity. 
     
     
         10 . The method of  claim 8 , wherein each of said substrates is implanted with the same pattern using said apertures. 
     
     
         11 . The method of  claim 8 , wherein each of said apertures has equal dimensions. 
     
     
         12 . The method of  claim 8 , further comprising aligning each of said substrates on said carrier with respect to said apertures. 
     
     
         13 . The method of  claim 8 , wherein said carrier is part of a conveyor belt.