Substrate processing method

Abstract

A substrate processing apparatus capable of improving a processing controllability in an etching process is provided. The substrate processing apparatus ( 10 ) includes a depressurized processing room ( 11 ); a susceptor ( 12 ) that is provided in the processing room ( 11 ) and configured to mount a wafer (W) thereon; a HF high frequency power supply ( 18 ) configured to apply a high frequency voltage for plasma generation to the susceptor ( 12 ); a LF high frequency power supply ( 20 ) configured to apply a high frequency voltage for a bias voltage generation to the susceptor ( 12 ); and a DC voltage applying unit ( 23 ) configured to apply a DC voltage of a rectangle-shaped wave to the susceptor ( 12 ).

1 . A substrate processing apparatus comprising:
 a depressurized processing room;   a mounting table that is provided in the processing room and configured to mount a substrate thereon;   a first high frequency power supply configured to apply a high frequency voltage of a relatively high frequency;   a second high frequency power supply configured to apply a high frequency voltage of a relatively low frequency to the mounting table; and   a DC voltage applying unit configured to apply a DC voltage of a rectangle-shaped wave to the mounting table.   
     
     
         2 . The substrate processing apparatus of  claim 1 , further comprising:
 a connection changeover switch configured to connect or disconnect the DC voltage applying unit to or from the second high frequency power supply and the mounting table.   
     
     
         3 . The substrate processing apparatus of  claim 1 , further comprising:
 a low pass filter configured to block the high frequency voltage of the relatively high frequency applied from the first high frequency power supply,   wherein the first high frequency power supply is connected to the mounting table, and   the low pass filter is provided between the first high frequency power supply and the second high frequency power supply, and between the first high frequency power supply and the DC voltage applying unit.   
     
     
         4 . The substrate processing apparatus of  claim 1 , further comprising:
 a facing electrode provided in the processing chamber to face the mounting table,   wherein the first high frequency power supply is connected to the facing electrode.   
     
     
         5 . The substrate processing apparatus of  claim 1 ,
 wherein the relatively high frequency is in a range of about 40 MHz to about 300 MHz,   the relatively low frequency is in a range of about 380 KHz to 20 MHz, and   a frequency of the DC voltage of the rectangle-shaped wave is equal to or smaller than about 3 MHz.