Sputtering targets, sputter reactors, methods of forming cast ingots, and methods of forming metallic articles

Abstract

The invention encompasses a method of forming a metallic article. An ingot of metallic material is provided, and such ingot has an initial thickness. The ingot is subjected to hot forging. The product of the hot forging is quenched to fix an average grain size of less than 250 microns within the metallic material. The quenched material can be formed into a three dimensional physical vapor deposition target. The invention also includes a method of forming a cast ingot. In particular aspects, the cast ingot is a high-purity copper material. The invention also includes physical vapor deposition targets, and magnetron plasma sputter reactor assemblies.

1 - 89 . (canceled) 
     
     
         90 . A method of forming a three-dimensional physical vapor deposition target, the method comprising:
 heating an ingot, the ingot defining first and second perpendicular directions;   forging the ingot to reduce a thickness of the ingot by 60% to 90% along the first direction to form a hot-forged product having a reduced thickness along the first direction and an increased size along a second direction;   quenching the hot-forged product; and   forming the quenched hot-forged product into a three-dimensional physical vapor deposition target with a press, wherein the three-dimensional physical vapor deposition target has an average grain size of less than 250 microns.   
     
     
         91 . The method of  claim 90 , wherein the ingot comprises copper. 
     
     
         92 . The method of  claim 90 , wherein the step of heating the ingot comprises heating the ingot to a temperature greater than 700° F. 
     
     
         93 . The method of  claim 90 , wherein the ingot contains at least 99.995 weight percent copper. 
     
     
         94 . The method of  claim 90 , wherein the ingot is a copper alloy ingot. 
     
     
         95 . The method of  claim 90 , wherein the ingot consists essentially of copper and at least one element selected from the group consisting of Cd, Ca, Au, Ag, Be, Li, Mg, Al, Pd, Hg, Ni, In, Zn, B, Ga, Mn, Sn, Ge, W, Cr, O, Sb, Ir, P, As, Co, Te, Fe, S, Ti, Zr, Sc, Sn and Hf. 
     
     
         96 . The method of  claim 95 , wherein the total amount of the at least one element is from at least about 100 ppm to less than about 10% by weight. 
     
     
         97 . The method of  claim 90 , wherein the three-dimensional physical vapor deposition target has an average grain size of less than 200 microns. 
     
     
         98 . The method of  claim 90 , wherein the three-dimensional physical vapor deposition target has an average grain size of less than 100 microns. 
     
     
         99 . The method of  claim 90 , wherein the step of forging the ingot comprises forging the ingot along only the first direction. 
     
     
         100 . The method of  claim 90 , wherein the press comprises first and second portions movable towards one another. 
     
     
         101 . A method of forming a three-dimensional physical vapor deposition target, the method comprising:
 heating an ingot to a temperature greater than 700° F., the ingot comprising copper and having first and second perpendicular directions;   compressing the ingot along only the first direction to form a hot-forged product;   quenching the hot-forged product; and   forming the quenched hot-forged product into a three-dimensional physical vapor deposition target with a press, wherein the three-dimensional physical vapor deposition target has an average grain size of less than 250 microns.   
     
     
         102 . The method of  claim 101 , wherein the ingot is a copper ingot having a purity of at least 99.995 weight percent. 
     
     
         103 . The method of  claim 101 , wherein the ingot is a copper alloy ingot. 
     
     
         104 . The method of  claim 101 , wherein the quenched hot-forged product has is larger in size along the first direction and smaller in size along the second direction than the ingot. 
     
     
         105 . The method of  claim 101 , wherein the three-dimensional physical vapor deposition target has an average grain size of less than 200 microns. 
     
     
         106 . The method of  claim 101 , wherein the three-dimensional physical vapor deposition target has an average grain size of less than 100 microns. 
     
     
         107 . The method of  claim 101 , wherein compressing the ingot comprises compressing the ingot to reduce the thickness by 60% to 90%.